HM879 TRANSISTOR (NPN) SOT-89-3L FEATURES z High Current z Low Voltage z General Purpose Amplifier Applications 1. BASE 2. COLLECTOR 3. EMITTER MARKING:879 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current 3 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 10 V Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 6 V Collector cut-off current ICBO VCB=20V,IE=0 100 nA Emitter cut-off current IEBO VEB=4V,IC=0 100 nA DC current gain hFE VCE=2V, IC=3A VCE(sat) IC=3A,IB=60mA 0.4 V Base-emitter voltage VBE VCE=1V, IC=2A 1.5 V Transition frequency fT Collector-emitter saturation voltage Collector output capacitance Cob 140 VCE=10V,IC=50mA 200 MHz VCB=10V, IE=0, f=1KHz 30 pF １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５