HTSEMI HM879

HM879
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z High Current
z Low Voltage
z General Purpose Amplifier Applications
1. BASE
2. COLLECTOR
3. EMITTER
MARKING:879
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
3
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10µA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
10
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=20V,IE=0
100
nA
Emitter cut-off current
IEBO
VEB=4V,IC=0
100
nA
DC current gain
hFE
VCE=2V, IC=3A
VCE(sat)
IC=3A,IB=60mA
0.4
V
Base-emitter voltage
VBE
VCE=1V, IC=2A
1.5
V
Transition frequency
fT
Collector-emitter saturation voltage
Collector output capacitance
Cob
140
VCE=10V,IC=50mA
200
MHz
VCB=10V, IE=0, f=1KHz
30
pF
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05