JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors NST3946 General purpose transistors (dual transistors) DESCRIPTION It is designed for general purpose amplifier applications . By putting two Discrete devices in one package , this device is ideal for low – power surface mount applications where board space is at a premium. SOT-563 1 FEATURES z Low VCE(sat) z Simplifies Circuit Design z Reduces Board Space z Reduces Component Count Marking: 46 Equivalent circuit A,Dec,2010 PNP 3906 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Collector Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-30V, IE=0 -0.05 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.05 μA DC current gain Collector-emitter saturation voltage hFE VCE=-1V, IC=-0.1mA 60 VCE=-1V, IC=-1mA 80 VCE=-1V, IC=-10mA 100 VCE=-1V, IC=-50mA 60 VCE=-1V, IC=-100mA 30 IC=-10mA, IB=-1mA -0.25 V IC=-50mA, IB=-5mA -0.4 V -0.85 V -0.95 V VCE(sat) IC=-10mA, IB=-1mA Base-emitter saturation voltage -0.65 VBE(sat) IC=-50mA, IB=-5mA Transition frequency Output capacitance 300 fT Cob VCE=-20V, IC=-10mA, f=100MHz VCB=-5V, IE=0, f=1MHz 250 MHz 4.5 A,Dec,2010 pF NPN 3904 Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 150 mW Thermal Resistance from Junction to Ambient 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 5 V Collector cut-off current ICBO VCB=30V, IE=0 0.05 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.05 μA DC current gain Collector-emitter saturation voltage hFE VCE=1V, IC=0.1mA 40 VCE=1V, IC=1mA 70 VCE=1V, IC=10mA 100 VCE=-1V, IC=50mA 60 VCE=-1V, IC=100mA 30 IC=10mA, IB=1mA 0.2 V IC=50mA, IB=5mA 0.3 V 0.85 V 0.95 V VCE(sat) IC=10mA, IB=1mA Base-emitter saturation voltage 0.65 VBE(sat) IC=50mA, IB=5mA Transition frequency Output capacitance 300 fT Cob VCE=20V, IC=20mA, f=100MHz VCB=5V, IE=0, f=1MHz 300 MHz 4 A,Dec,2010 pF