NSS12200WT1G 12 V, 3 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 12 VOLTS 3.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 163 mW COLLECTOR 1, 2, 5, 6 3 BASE Features • • • • • http://onsemi.com High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size This is a Pb−Free Device 4 EMITTER Benefits 1 • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life SC−88/SOT−363 CASE 419B STYLE 20 MAXIMUM RATINGS (TA = 25°C) Rating DEVICE MARKING Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −2.0 −3.0 Adc Electrostatic Discharge ESD HBM Class 3 MM Class C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 6 V2M G 1 V2 = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device NSS12200WT1G Package Shipping † SOT−363 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 0 1 Publication Order Number: NSS12200W/D NSS12200WT1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) 450 mW 3.6 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 275 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 650 mW 5.2 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 192 °C/W RqJL 105 °C/W PD Single 1.4 W TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Lead 6 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) V(BR)CEO −12 −15 − Vdc Collector −Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V(BR)CBO −12 −25 − Vdc Emitter −Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 −7.0 − Vdc Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) ICBO − −0.02 −0.1 mAdc Collector−Emitter Cutoff Current, (VCES = −12 Vdc, IE = 0) ICES − −0.03 −0.1 mAdc Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) IEBO − −0.03 −0.1 mAdc 100 100 100 180 165 160 − 300 − − − − −0.10 −0.14 −0.17 −0.160 −0.235 −0.290 − −0.84 −0.95 − −0.81 −0.95 − 100 − − 50 65 OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −0.5 A, VCE = −1.5 V) (IC = −0.8 A, VCE = −1.5 V) (IC = −1.0 A, VCE = −1.5 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.5 A, IB = −10 mA) (IC = −0.8 A, IB = −16 mA) (IC = −1.0 A, IB = −20 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −20 mA) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −1.5 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT Output Capacitance (VCB = −1.5 V, f = 1.0 MHz) MHz Cobo 1. FR−4, Minimum Pad, 1 oz Coverage. 2. FR−4, 1″ Pad, 1 oz Coverage. 3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2%. http://onsemi.com 2 pF VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) NSS12200WT1G 0.5 0.4 2A 0.3 0.2 1A 800 mA 0.1 IC = 100 mA 500 mA 0 1 10 IB, BASE CURRENT (mA) 100 Figure 1. Collector Emitter Voltage vs. Base Current VBE, BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 0.3 0.2 IC/IB = 100 0.1 IC/IB = 10 0 0.001 0.1 0.01 IC, COLLECTOR CURRENT (AMPS) 300 25°C TA = −55°C 0.9 TA = −55°C 0.8 0.7 25°C 0.6 0.5 125°C 0.4 VCE = 1.5 V 0.3 0 0.001 0.01 0.1 0.001 1 IC, COLLECTOR CURRENT (AMPS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current 1.0 10 0.9 IC, COLLECTOR CURRENT (A) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1 1.0 VCE = 1.5 V 125°C 100 0.4 Figure 2. Collector Emitter Voltage vs. Collector Current 400 200 0.5 IC/IB = 10 0.8 IC/IB = 100 0.7 dc 1s 100 ms 10 ms 1 ms 1 0.1 SINGLE PULSE TA = 25°C 0.6 0.01 0.001 0.01 0.1 1 0.1 IC, COLLECTOR CURRENT (AMPS) 1 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Base Emitter Saturation Voltage vs. Base Current Figure 6. Safe Operating Area http://onsemi.com 3 r(t), MINIMUM PAD NORMALIZED TRANSIENT THERMAL RESISTANCE NSS12200WT1G 1 D = 0.50 D = 0.20 0.1 D = 0.10 D = 0.05 D = 0.02 0.01 D = 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 Figure 7. Normalized Thermal Response http://onsemi.com 4 10 100 1000 NSS12200WT1G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M A3 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 NSS12200WT1G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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