NSS30100LT1G 30 V, 2 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 30 VOLTS 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 200 mW COLLECTOR 3 • This is a Pb−Free Device 1 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −30 Vdc Collector-Base Voltage VCBO −50 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −1.0 A ICM −2.0 A Collector Current − Continuous Collector Current − Peak 2 EMITTER 3 1 THERMAL CHARACTERISTICS 2 Characteristic SOT−23 (TO−236) CASE 318 STYLE 6 Symbol Max Unit PD (Note 1) 310 mW 2.5 mW/°C RθJA (Note 1) 403 °C/W PD (Note 2) 710 mW 3 5.7 mW/°C VS4 RθJA (Note 2) 176 °C/W Total Device Dissipation (Single Pulse < 10 sec.) PDsingle (Note 3) 575 mW Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 X 1.0 inch Pad. 3. Refer to Figure 8. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 0 1 DEVICE MARKING 2 1 VS4 = Specific Device Code ORDERING INFORMATION Device Package Shipping† NSS30100LT1G SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS30100L/D NSS30100LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 − −50 − −5.0 − − −0.1 − −0.1 − −0.1 100 100 80 40 − 300 − − − − − −0.25 −0.30 −0.65 − −1.2 − −1.1 100 − − 15 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −30 Vdc) ICES Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 4) (Figure 1) (IC = −1.0 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = 2.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 4) (Figure 3) (IC = −0.5 A, IB = −0.05 A) (IC = −1.0 A, IB = 0.1 A) (IC = −2.0 A, IB = −0.2 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (Figure 2) (IC = −1.0 A, IB = −0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −1.0 A, VCE = −2.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT Output Capacitance (f = 1.0 MHz) Cobo 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 MHz pF NSS30100LT1G 200 230 210 170 150 100 25°C 130 110 50 90 −55°C 70 0 0.01 0.001 0.1 1.0 50 10 Figure 2. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1000 Figure 1. DC Current Gain versus Collector Current VBE(sat) 0.8 0.7 VBE(on) 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) 1.0 100 10 1000 IC/IB = 100 0.7 0.65 0.6 0.55 0.5 VCE(sat) , COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.4 100 mA 50 mA 0.1 0.8 0.75 0.001 0.01 0.1 1.0 10 Figure 4. Base Emitter Saturation Voltage versus Collector Current 1000 mA 0.01 IC/IB = 10 Figure 3. “On” Voltages 0.6 10 mA 0.9 0.85 IC, COLLECTOR CURRENT (AMPS) 0.8 0.2 0.95 IC, COLLECTOR CURRENT (mA) 1.0 0 100 IC, COLLECTOR CURRENT (mA) 0.9 0 10 1.0 IC, COLLECTOR CURRENT (AMPS) 1.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE = −1.0 V 125°C 190 150 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN VCE = −2.0 V 1.0 10 100 1000 1.8 1.6 IC/IB = 100 1.4 1.2 1.0 0.8 0.6 IC/IB = 10 0.4 0.2 0 0.001 0.01 0.1 1.0 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 3 10 NSS30100LT1G IC , COLLECTOR CURRENT (AMPS) 10 SINGLE PULSE TEST AT Tamb = 25°C 1s 1.0 10 ms 100 ms 1 ms 100 ms 2s 0.1 0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area 0.5 0.2 0.1 1.0E+00 0.05 0.02 Rthja , (t) 1.0E−01 D = 0.01 1.0E−02 r(t) 1.0E−03 1E−05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 4 10 100 1000 NSS30100LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 NSS30100LT1G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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