GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics INT-A-PAK • Industry standard package • Al2O3 DBC • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VCES 600 V • Designed for industrial level IC DC 108 A BENEFITS VCE(on) at 100 A, 25 °C 2.6 V • Benchmark efficiency for UPS and welding application • Rugged transient performance • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS TC = 25 °C TC = 80 °C MAX. UNITS 600 V 108 74 Pulsed collector current ICM 200 Clamped inductive load current ILM 200 Diode continuous forward current IF Gate to emitter voltage VGE Maximum power dissipation PD Isolation voltage Document Number: 94501 Revision: 04-May-10 VISOL A TC = 25 °C 106 TC = 80 °C 69 ± 20 TC = 25 °C 390 TC = 80 °C 219 Any terminal to case, t = 1 min 2500 For technical questions, contact: [email protected] V W V www.vishay.com 1 GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 50 A - 1.95 2.1 VGE = 15 V, IC = 100 A - 2.6 2.85 VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.21 2.44 VGE = 15 V, IC = 100 A, TJ = 125 °C - 3.05 3.38 VCE = VGE, IC = 500 μA 3 4.6 6 VGE = 0 V, VCE = 600 V - 0.01 0.1 VGE = 0 V, VCE = 600 V, TJ = 150 °C - 3.7 10 IC = 50 A - 1.35 1.66 IC = 100 A - 1.57 1.96 IC = 50 A, TJ = 125 °C - 1.27 1.50 IC = 100 A, TJ = 125 °C - 1.57 1.89 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 0.6 - - 1.1 - V mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss SYMBOL TEST CONDITIONS Eon IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 4.7 Ω, L = 200 μH, TJ = 25 °C Turn-off switching loss Eoff Total switching loss Etot - 1.7 - Turn-on switching loss Eon - 0.8 - Turn-off switching loss Eoff - 1.3 - Total switching loss Etot - 2.1 - Turn-on delay time Rise time Turn-off delay time Fall time mJ IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 4.7 Ω, L = 200 μH, TJ = 125 °C - 197 - tr - 50 - td(off) - 225 - tf - 72 - td(on) ns Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 200 A, Rg = 27 Ω, VGE = 15 V to 0 Short circuit safe operating area SCSOA TJ = 150 °C, VCC = 400 V, VP = 600 V, Rg = 27 Ω, VGE = 15 V to 0 Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr www.vishay.com 2 IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 25 °C IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 125 °C For technical questions, contact: [email protected] Fullsquare 10 - - - 116 140 ns - 11 15 A - 600 1050 nC - 152 190 ns - 16 20 A - 1215 1900 nC Document Number: 94501 Revision: 04-May-10 GB100TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 108 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - 0.23 0.32 - 0.38 0.64 - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - Operating junction and storage temperature range IGBT Junction to case per leg Diode Case to sink per module RthJC RthCS °C/W Mounting torque Nm Weight 200 200 Vge = 18V Vge = 15V Vge = 12V 150 180 160 Vge = 9V 140 IcE (A) IcE (A) g 100 120 100 80 60 50 Tj = 125°C 40 Tj = 25°C 20 0 0 0 1 2 3 4 5 0 6 4 6 8 10 VGE (V) Fig. 1 - Typical IGBT Output Characteristics TJ = 25 °C, tp = 500 μs Fig. 3 - Typical Transfer Characteristics VCE = 20 V, tp = 500 μs 200 5 VCE, Collector -to-Emitter Voltage (V) Vge = 18V Vge = 15V Vge = 12V 150 IcE (A) 2 VCE (V) Vge = 9V 100 50 Ic = 200A 4.5 4 3.5 Ic = 100A 3 2.5 Ic = 50A 2 1.5 0 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 VCE (V) TJ, Junction Temperature (°C) Fig. 2 - Typical IGBT Output Characteristics TJ = 125 °C, tp = 500 μs Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V, 500 μs pulse width Document Number: 94501 Revision: 04-May-10 For technical questions, contact: [email protected] www.vishay.com 3 GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A 200 1000 Switching Time (ns) IF (A) 150 100 50 td(off) td(on) 100 tf Tj = 125°C tr Tj = 25°C 0 10 0.0 0.5 1.0 1.5 20 2.0 60 80 100 I (A) Fig. 5 - Diode Forward Characteristics, tp = 500 μs Fig. 8 - Typical Switching Time vs. IC TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 4.7 Ω, VGE = 15 V 5000 160 4500 140 4000 120 Eon 3500 Energy (mJ) TC, Case Temperature (°C) 40 VF (V) 100 DC 80 60 3000 Eoff 2500 2000 1500 40 1000 20 500 0 0 0 20 40 60 80 100 0 120 10 20 30 40 50 Maximum DC Collector Current (A) RG (Ω) Fig. 6 - Maximum Collector Current vs. Case Temperature Fig. 9 - Typical Energy Loss vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 100 A, VGE = 15 V 1400 1000 1200 Energy Time (ns) Energy (mJ) td(off) Eoff 1000 800 Eon 600 400 td(on) 100 tf tr 200 10 0 0 20 40 60 80 100 120 0 10 Fig. 7 - Typical Energy Loss vs. IC, TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 4.7 Ω, VGE = 15 V www.vishay.com 4 20 30 40 50 RG (Ω) IC (A) Fig. 10 - Typical Switching Time vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 100 A, VGE = 15 V For technical questions, contact: [email protected] Document Number: 94501 Revision: 04-May-10 GB100TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 108 A 100 9 Total Switching Losses (mJ) 90 4.7 ohm 80 IRR (A) 70 60 27 ohm 50 40 30 47 ohm 20 8 7 6 5 4 3 2 10 1 0 0 20 40 60 80 100 0 120 10 20 Fig. 11 - Typical Diode Irr vs. IF, TJ = 125 °C 50 Total Switching Losses (mJ) 10 80 IRR (A) 40 Fig. 14 - Typical Switching Losses vs. Gate Resistance, TJ = 125 °C, L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V 100 60 40 20 0 Ic = 100A Ic = 50A 1 Ic = 25A 0.1 0 10 20 30 40 50 0 25 50 75 100 125 RG (Ω) TJ - Junction Temperature (°C) Fig. 12 - Typical Diode Irr vs. Rg, TJ = 125 °C, IF = 100 A Fig. 15 - Typical Switching Losses vs. Junction Temperature, L = 200 μH, Rg = 10 Ω, VCC = 360 V, VGE = 15 V 90 Total Switching Losses (mJ) 2.5 80 IRR (A) 30 RG (Ω) IF (A) 70 60 50 2 1.5 1 0.5 0 600 800 1000 1200 1400 1600 1800 20 40 Fig. 13 - Typical Diode Irr vs. dIF/dt, TJ = 125 °C, VCC = 360 V, IF = 150 A, VGE = 15 V Document Number: 94501 Revision: 04-May-10 60 80 100 IC (A) dIF / dt (A/μs) Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current, TJ = 125 °C, Rg1 = 4.7 V, Rg2 = 0 Ω, VCC = 360 V, VGE = 15 V For technical questions, contact: [email protected] www.vishay.com 5 GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 108 A Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 1E+01 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) 1 Thermal response (Z thJC) D = 0.5 D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.01 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 t1 , Rectangular Pulse Duration (sec) Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94501 Revision: 04-May-10 GB100TS60NPbF INT-A-PAK "Half-Bridge" Vishay High Power Products (Ultrafast Speed IGBT), 108 A ORDERING INFORMATION TABLE Device code G B 100 T S 60 N PbF 1 2 3 4 5 6 7 8 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Generation 5 NPT 3 - Current rating (100 = 100 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (S = INT-A-PAK) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (N = Ultrafast IGBT) 8 - Lead (Pb)-free CIRCUIT CONFIGURATION 3 6 7 1 4 5 2 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94501 Revision: 04-May-10 www.vishay.com/doc?95173 For technical questions, contact: [email protected] www.vishay.com 7 Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) Ø 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 35 (1.38) 17 (0.67) 3 66 (2.60) 37 (1.44) 94 (3.70) Document Number: 95067 Revision: 15-Feb-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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