CPV364M4UPbF Vishay High Power Products IGBT SIP Module (Ultrafast IGBT) FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED® soft ultrafast diodes RoHS COMPLIANT • Optimized for high speed over 5 kHz See fig. 1 for current vs. frequency curve IMS-2 • Totally lead (Pb)-free • Designed and qualified for industrial level PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.5 kW total) with TC = 90 °C 12 ARMS TJ 125 °C Supply voltage 360 Vdc Power factor 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 10 A, 25 °C 1.56 V DESCRIPTION The IGBT technology is the key to Vishay’s HPP advanced line of IMS (Insulated Metal Substrate) power modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current, each IGBT SYMBOL TEST CONDITIONS VCES IC MAX. UNITS 600 V TC = 25 °C 20 TC = 100 °C 10 Pulsed collector current ICM (1) 60 Clamped inductive load current ILM (2) 60 A TC = 100 °C 9.3 Diode continuous forward current IF Diode maximum forward current IFM 60 Gate to emitter voltage VGE ± 20 V 2500 VRMS Isolation voltage Maximum power dissipation, each IGBT Operating junction and storage temperature range VISOL PD t = 1 min, any terminal to case TC = 25 °C 63 TC = 100 °C 25 TJ, TStg W - 40 to + 150 °C Soldering temperature For 10 s, (0.063" (1.6 mm) from case) Mounting torque 6-32 or M3 screw 300 5 to 7 (0.55 to 0.8) lbf ⋅ in (N ⋅ m) Notes (1) Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature (see fig. 20) (2) V CC = 80 % (VCES), VGE = 20 V, L = 10 µH, RG = 10 Ω (see fig. 19) Document Number: 94489 Revision: 01-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case, each IGBT, one IGBT in conduction Junction to case, each DIODE, one DIODE in conduction Case to sink, flat, greased surface SYMBOL TYP. MAX. RthJC (IGBT) - 2.0 UNITS RthJC (DIODE) - 3.0 RthCS (MODULE) 0.10 - 20 - g 0.7 - oz. °C/W Weight of module ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage V(BR)CES Temperature coefficient of breakdown voltage (1) ΔV(BR)CES/ΔTJ TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 µA 600 - - V VGE = 0 V, IC = 1.0 mA - 0.63 - V/°C - 1.56 2.1 1.84 - IC = 10 A Collector to emitter saturation voltage VCE(on) IC = 20 A VGE = 15 V See fig. 2, 5 - 1.56 V IC = 10 A, TJ = 150 °C - VGE(th) VCE = VGE, IC = 250 µA 3.0 - 6.0 Temperature coefficient of threshold voltage ΔVGE(th)/ΔTJ VCE = VGE, IC = 250 µA - - 13 - mV/°C Forward transconductance gfe (2) VCE = 100 V, IC = 10 A 11 18 - S - 250 ICES VGE = 0 V, VCE = 600 V - Zero gate voltage collector current VGE = 0 V, VCE = 600 V, TJ = 150 °C - - 3500 IC = 15 A - 1.3 1.7 IC = 15 A, TJ = 150 °C - 1.2 1.6 VGE = ± 20 V - - ± 100 Gate threshold voltage Diode forward voltage drop VFM Gate to emitter leakage current IGES - µA See fig. 13 V nA Notes (1) Pulse width ≤ 80 µs, duty factor ≤ 0.1 % (2) Pulse width 5.0 µs; single shot www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94489 Revision: 01-Sep-08 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Turn-on switching loss Eon Turn-off switching loss Eoff TEST CONDITIONS MIN. TYP. MAX. - 100 160 - 16 24 - 40 55 - 41 - TJ = 25 °C IC = 10 A, VCC = 480 V VGE = 15 V, RG = 10 Ω Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 - 13 - - 96 140 - 110 160 - 0.26 - - 0.18 - IC = 10 A VCC = 400 V VGE = 15 V See fig. 8 Ets - 0.44 0.7 Turn-on delay time td(on) TJ = 150 °C IC = 10 A, VCC = 480 V VGE = 15 V, RG = 10 Ω Energy losses include “tail” and diode reverse recovery See fig. 9, 10, 11, 18 - 39 - - 15 - - 220 - - 160 - - 0.74 - VGE = 0 V VCC = 30 V ƒ = 1.0 MHz See fig. 7 - 2100 - - 110 - - 34 - - 42 60 - 74 120 - 4.0 6.0 - 6.5 10 - 80 180 - 220 600 - 188 - - 160 - Turn-off delay time Fall time tr td(off) tf Total switching loss Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse recovery charge Diode reverse recovery charge Diode peak rate of fall of recovery during tb Document Number: 94489 Revision: 01-Sep-08 Irr Qrr dI(rec)M/dt TJ = 25 °C See fig. 15 TJ = 125 °C TJ = 25 °C See fig. 16 mJ pF ns IF = 15 A VR = 200 V dI/dt = 200 A/µs TJ = 125 °C TJ = 25 °C mJ ns See fig. 14 TJ = 125 °C TJ = 25 °C nC ns Total switching loss Rise time UNITS A nC See fig. 17 TJ = 125 °C For technical questions, contact: [email protected] A/µs www.vishay.com 3 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products 20 5.85 Tc = 90°C Tj = 125°C Power Factor = 0.8 Modulation Depth = 1.15 Vcc = 50% of Rated Voltage LOAD CURRENT (A) 16 14 5.27 4.68 4.10 12 3.51 10 2.93 8 2.34 6 1.76 4 1.17 2 0.59 0 0.1 0.00 1 10 Total Output Power (kW) 18 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental) 20 Maximum DC Collector Current(A) IC , Collector-to-Emitter Current (A) 100 TJ = 150°C 10 TJ = 25°C VGE = 15V 20µs PULSE WIDTH 1 0.1 1 12 8 4 0 25 10 VCE , Collector-to-Emitter Voltage(V) 2.0 T J = 150°C 10 TJ = 25°C V CC = 10V 5µs PULSE WIDTH 5 6 7 8 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics www.vishay.com 4 75 100 125 150 Fig. 4 - Maximum Collector Current vs. Case Temperature 100 1 50 TC , Case Temperature ( °C) VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics IC , Collector-to-Emitter Current (A) 16 9 VGE = 15V 80 us PULSE WIDTH IC = 20A 1.8 IC = 10A 1.6 1.4 IC = 5.0 5A 1.2 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature For technical questions, contact: [email protected] Document Number: 94489 Revision: 01-Sep-08 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 t 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 1 t 2 2 2. Peak TJ = P DM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case 0.70 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Total Switching Losses (mJ) C, Capacitance (pF) 4000 3000 Cies 2000 Coes 1000 Cres VCC VGE TJ 0.65 IC 0.60 0.55 0.50 0.45 0.40 0 0 1 10 100 Total Switching Losses (mJ) VGE , Gate-to-Emitter Voltage (V) 10 12 8 4 0 0 20 40 60 80 100 120 QG , Total Gate Charge (nC) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage Document Number: 94489 Revision: 01-Sep-08 20 30 40 50 Fig. 9 - Typical Switching Losses vs. Gate Resistance VCC = 400V I C = 10A 16 10 RG , Gate Resistance (Ω) VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage 20 = 480V = 15V = 25 ° C = 10A RG = 10 Ω VGE = 15V VCC = 480V IC = 20 A 1 IC = 10 A IC = 5.05 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 5 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products RG TJ V 1.5 CC VGE 100 = 10 Ω = 150 °C = 480V = 15V I C, Collector-to-Emitter Current (A) Total Switching Losses (mJ) 1.8 1.2 0.9 0.6 0.3 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0.0 0 4 8 12 16 20 1 24 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector to Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 100 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94489 Revision: 01-Sep-08 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) Vishay High Power Products 800 100 VR = 200V TJ = 125°C TJ = 25°C VR= 200V T J = 125°C T J = 25°C 600 80 Q RR - (nC) t rr - (ns) IF = 30A I F = 30A 60 I F = 15A 400 I F = 15A IF = 5.0A 200 40 I F = 5.0A 20 10 0 di f /dt - (A/µs) 0 100 1000 Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt Fig. 16 - Typical Stored Charge vs. dIF/dt 100 1000 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) VR = 200V TJ = 125°C TJ = 25°C I F = 30A I IRRM - (A) 1000 di f /dt - (A/µs) IF = 15A 10 I F = 5.0A I F = 15A I F = 30A I F = 5.0A 1 100 1000 100 100 1000 di f /dt - (A/µs) di f /dt - (A/µs) Fig. 15 - Typical Recovery Current vs. dIF/dt Document Number: 94489 Revision: 01-Sep-08 Fig. 17 - Typical dI(rec)M/dt vs dIF/dt For technical questions, contact: [email protected] www.vishay.com 7 CPV364M4UPbF Vishay High Power Products IGBT SIP Module (Ultrafast IGBT) GATE VOLTAGE D.U.T. 10% +Vg +Vg Same type device as D.U.T. DUT VOLTAGE AND CURRENT Vce 430µF 80% of Vce Vcc 10% Ic Ipk 90% Ic Ic D.U.T. 5% Vce tr td(on) t2 Eon = Vce ie dt t1 ∫ t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t2 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 90% Vge trr Qrr = Ic +Vge tx 10% Vcc Vce ∫ trr id dt tx 10% Irr Vcc Ic 90% Ic 10% Vce Vpk Irr Ic 5% Ic td(off) DIODE RECOVERY WAVEFORMS tf Eoff = ∫ t1+5µS Vce ic dt t1 DIODE REVERSE RECOVERY ENERGY t3 t1 t4 Erec = Vd id dt t3 ∫ t4 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 94489 Revision: 01-Sep-08 CPV364M4UPbF IGBT SIP Module (Ultrafast IGBT) D.U.T. L 1000 V RL = VC 480 V 4 x IC at 25 °C 0 - 480 V 6000 µF 100 V 50 V Vishay High Power Products Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit CIRCUIT CONFIGURATION 1 3 Q1 D1 9 Q3 D3 4 6 Q2 D2 7 12 15 Q5 D5 10 Q4 D4 13 18 16 Q6 D6 19 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94489 Revision: 01-Sep-08 http://www.vishay.com/doc?95066 For technical questions, contact: [email protected] www.vishay.com 9 Outline Dimensions Vishay Semiconductors IMS-2 (SIP) DIMENSIONS in millimeters (inches) Ø 3.91 (0.154) 2x 62.43 (2.458) 7.87 (0.310) 53.85 (2.120) 5.46 (0.215) 21.97 (0.865) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 0.38 (0.015) 3.94 (0.155) 1.27 (0.050) 4.06 ± 0.51 (0.160 ± 0.020) 5.08 (0.200) 6x 1.27 (0.050) 13 x 2.54 (0.100) 6x 3.05 ± 0.38 (0.120 ± 0.015) 0.76 (0.030) 13 x 0.51 (0.020) 6.10 (0.240) IMS-2 Package Outline (13 Pins) Notes (1) Tolerance uless otherwise specified ± 0.254 mm (0.010") (2) Controlling dimension: inch (3) Terminal numbers are shown for reference only Document Number: 95066 Revision: 30-Jul-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1