GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VCES 1200 V IC DC 100 A at 119 °C VCE(on) typical at 100 A, 25 °C 1.73 V BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Speed 4 kHz to 30 kHz • Very low VCE(on) • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC (1) Pulsed collector current ICM Clamped inductive load current ILM Diode continuous forward current TEST CONDITIONS IF MAX. UNITS 1200 V TC = 25 °C 258 TC = 80 °C 174 450 450 TC = 25 °C 50 TC = 80 °C 34 Peak diode forward current IFSM 180 Gate to emitter voltage VGE ± 20 Power dissipation, IGBT PD Power dissipation, diode PD Isolation voltage VISOL TC = 25 °C 893 TC = 119 °C 221 TC = 25 °C 176 TC = 119 °C 44 Any terminal to case, t = 1 min 2500 A V W V Note (1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals Document Number: 93196 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage VBR(CES) VCE(on) VGE(th) Temperature coefficient of threshold voltage VGE(th)/TJ Collector to emitter leakage current Forward voltage drop ICES VFM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA 1200 - - VGE = 15 V, IC = 100 A - 1.73 2.1 VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.98 2.2 4.9 5.9 7.9 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.6 - mV/°C VGE = 0 V, VCE = 1200 V - 0.6 100 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.6 10 mA IF = 40 A, VGE = 0 V - 2.81 3.3 IF = 40 A, VGE = 0 V, TJ = 125 °C - 3.07 3.4 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 5.2 - V VCE = VGE, IC = 7.5 mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time tr Turn-off delay time IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 25 °C IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 5 L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 20) RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Short circuit safe operating area SCSOA 7.1 - - 12.3 - - 6.1 - - 9.8 - - 15.9 - - 350 - - 75 - - 374 - - 493 - ns tf Reverse bias safe operating area - mJ td(off) Fall time www.vishay.com 2 TEST CONDITIONS TJ = 150 °C, IC = 450 A, Rg = 22 VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V, TJ = 125 °C Fullsquare - 164 194 ns - 12 15 A - 994 1455 nC - 230 273 ns - 16.5 20 A - 1864 2730 nC TJ = 150 °C, Rg = 22 , VGE = 15 V to 0 V, VCC = 900 V, Vp = 1200 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 10 μs Document Number: 93196 Revision: 22-Jul-10 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.14 - - 0.71 - 0.1 - Maximum junction and storage temperature range IGBT Junction to case RthJC Diode Case to sink per module RthCS °C/W - - 1.3 Nm Weight - 30 - g 300 160 275 140 250 IGBT DC 225 120 80 60 175 TJ = 150 °C 150 TJ = 25 °C 125 100 75 40 50 20 25 0 0 0 40 80 120 160 200 240 280 IC - Continuous Collector Current (A) 93196_01 0 100 10 1 0.1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE (V) Fig. 3 - Typical IGBT Collector Current Characteristics VGE = 15 V Allowable Case Temperature (°C) 1000 0.5 93196_03 Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature IC (A) TJ = 125 °C 200 100 IC (A) Allowable Case Temperature (°C) Mounting torque, 6-32 or M3 screw 180 160 140 120 Diode DC 100 0.01 80 60 40 20 0 1 10 100 1000 VCE (V) 93196_02 Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Document Number: 93196 Revision: 22-Jul-10 0 10 000 93196_04 10 20 30 40 50 60 IF - Continuous Forward Current (A) Fig. 4 - Maximum DC Forward Current vs. Case Temperature For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors 200 2.75 175 2.50 TJ = 150 °C 150 150 A 2.25 VCE (V) IF (A) 125 TJ = 25 °C 100 TJ = 125 °C 75 100 A 2.00 1.75 50 A 1.50 50 25 1.25 0 1.00 27 A 0 1 2 3 4 5 6 7 VFM (V) 93196_05 20 60 80 100 120 140 160 TJ (°C) Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 5 - Typical Diode Forward Characteristics 10 11 TJ = 150 °C 10 1 9 TJ = 125 °C 8 Energy (mJ) 0.1 ICES (mA) 40 93196_08 0.01 0.001 7 Eoff 6 5 Eon 4 TJ = 25 °C 3 0.0001 2 0.00001 100 1 300 500 700 900 1100 1300 VCES (V) 93196_06 20 30 40 50 60 70 80 90 100 110 IC (A) 93196_09 Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 5 , VGE = 15 V Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 6.0 1000 tf 5.5 td(off) Switching Time (ns) TJ = 25 °C Vgeth (V) 5.0 4.5 TJ = 125 °C 4.0 td(on) 100 tr 3.5 3.0 10 0 1 2 3 4 5 6 7 IC (mA) 93196_07 Fig. 7 - Typical IGBT Threshold Voltage www.vishay.com 4 8 20 93196_10 30 40 50 60 70 80 90 100 110 IC (A) Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 5 , VGE = 15 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93196 Revision: 22-Jul-10 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors 310 40 290 35 270 250 Energy (mJ) 30 230 trr (ns) 25 Eon 20 TJ = 125 °C 210 190 170 15 150 10 TJ = 25 °C 130 Eoff 110 5 0 10 20 30 40 90 100 50 Rg (Ω) 93196_11 1000 dIF/dt (A/μs) 93196_13 Fig. 13 - Typical trr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 720 V, VGE = 15 V 45 10 000 td(on) 35 td(off) 1000 30 tf Irr (A) Switching Time (ns) 40 tr 100 TJ = 125 °C 25 20 15 TJ = 25 °C 10 5 10 0 10 20 30 40 0 100 50 Rg (Ω) 93196_12 1000 dIF/dt (A/μs) 93196_14 Fig. 14 - Typical Irr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 720 V, IC = 100 A, VGE = 15 V 3000 2500 TJ = 125 °C Qrr (nC) 2000 1500 1000 TJ = 25 °C 500 0 100 93196_15 1000 dIF/dt (A/μs) Fig. 15 - Typical Qrr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Document Number: 93196 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93196_16 Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93196_17 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93196 Revision: 22-Jul-10 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 19a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 19b - Switching Loss Waveforms Test Circuit Document Number: 93196 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 GT100DA120U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code G T 100 D A 120 U 1 2 3 4 5 6 7 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - T = Trench IGBT technology 3 - Current rating (100 = 100 A) 4 - Circuit configuration (D = Single switch with antiparallel diode) 5 - Package indicator (A = SOT-227) 6 - Voltage rating (120 = 1200 V) 7 - Speed/type (U = Ultrafast) CIRCUIT CONFIGURATION 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93196 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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