40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 μs short circuit capability • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF • Al2O3 DBC • Optional SMD thermistor (NTC) • Very low stray inductance design for high speed operation MTP • UL approved file E78996 • Speed 8 kHz to 60 kHz • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Optimized for welding, UPS and SMPS applications PRODUCT SUMMARY VCES 1200 V • Rugged with ultrafast performance VCE(on) typical at VGE = 15 V 3.36 V • Benchmark efficiency above 20 kHz IC at TC = 25 °C 80 A • Outstanding ZVS and hard switching operation • Low EMI, requires less snubbing • Excellent current sharing in parallel operation • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter breakdown voltage TEST CONDITIONS VCES Continuous collector current IC TC = 25 °C TC = 104 °C MAX. UNITS 1200 V 80 40 Pulsed collector current ICM 160 Clamped inductive load current ILM 160 A TC = 105 °C 21 Diode continuous forward current IF Diode maximum forward current IFM 160 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation (only IGBT) PD V Any terminal to case, t = 1 min 2500 TC = 25 °C 463 TC = 100 °C 185 W * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94507 Revision: 01-Mar-10 For technical questions, contact: [email protected] www.vishay.com 1 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Temperature coefficient of breakdown voltage Collector to emitter saturation voltage Gate threshold voltage Temperature coefficient of threshold voltage Transconductance Zero gate voltage collector current Gate to emitter leakage current SYMBOL V(BR)CES ΔV(BR)CES/ΔTJ VCE(on) VGE(th) VGE(th)/ΔTJ gfe ICES IGES TEST CONDITIONS MIN. TYP. MAX. UNITS 1200 - - V VGE = 0 V, IC = 3 mA (25 °C to 125 °C) - + 1.1 - V/°C VGE = 15 V, IC = 40 A - 3.36 3.59 VGE = 15 V, IC = 80 A - 4.53 4.91 VGE = 15 V, IC = 40 A, TJ = 150 °C - 3.88 4.10 VGE = 15 V, IC = 80 A, TJ = 150 °C - 5.35 5.68 VCE = VGE, IC = 500 μA 4 - 6 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C VCE = 50 V, IC = 40 A, PW = 80 μs - 35 - S VGE = 0 V, VCE = 1200 V, TJ = 25 °C - - 250 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.4 1.0 VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 0.2 10 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS - 399 599 VCC = 600 V VGE = 15 V - 43 65 - 187 281 VCC = 600 V, IC = 40 A, VGE = 15 V, Rg = 5 Ω, L = 200 μH, TJ = 25 °C, energy losses include tail and diode reverse recovery - 1.14 1.71 - 1.35 2.02 - 2.49 3.73 VCC = 600 V, IC = 40 A, VGE = 15 V, Rg = 5 Ω, L = 200 μH, TJ = 125 °C, energy losses include tail and diode reverse recovery - 1.60 2.40 - 1.62 2.43 - 3.22 4.82 - 5521 8282 - 380 570 - 171 257 VGE = 0 V, IC = 250 μA V mA SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres TEST CONDITIONS IC = 40 A VGE = 0 V VCC = 30 V f = 1.0 MHz Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 160 A VCC = 1000 V, Vp = 1200 V Rg = 5 Ω, VGE = + 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C, VCC = 900 V, Vp = 1200 V Rg = 5 Ω, VGE = + 15 V to 0 V www.vishay.com 2 For technical questions, contact: [email protected] nC mJ pF Fullsquare 10 - - μs Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IC = 40 A Diode forward voltage drop VFM Reverse recovery energy of the diode Erec Diode reverse recovery time trr Peak reverse recovery current Irr MIN. TYP. MAX. - 2.98 3.38 UNITS IC = 80 A - 3.90 4.41 IC = 40 A, TJ = 125 °C - 3.08 3.39 IC = 80 A, TJ = 125 °C - 4.29 4.72 IC = 40 A, TJ = 150 °C - 3.12 3.42 VGE = 15 V, Rg = 5 Ω, L = 200 μH VCC = 600 V, IC = 40 A TJ = 125 °C - 574 861 μJ - 120 180 ns - 43 65 A V THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only) PARAMETER MIN. TYP. MAX. UNITS Resistance SYMBOL R0 (1) T0 = 25 °C TEST CONDITIONS - 30 - kΩ Sensitivity index of the thermistor material β (1)(2) T0 = 25 °C T1 = 85 °C - 4000 - K UNITS Notes (1) T , T are thermistor´s temperatures 0 1 (2) R0 1 1 ------- = exp β ⎛⎝ ------ – ------⎞⎠ , temperature in Kelvin T0 T1 R1 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range MIN. TYP. MAX. TJ TEST CONDITIONS - 40 - 150 TStg - 40 - 125 - - 0.29 - - 0.61 Heatsink compound thermal conductivity = 1 W/mK - 0.06 - External shortest distance in air between 2 terminals 5.5 - - 8 - - °C IGBT Junction to case Diode Case to sink per module Clearance (1) RthJC RthCS Creepage (2) Shortest distance along external surface of the insulating material between 2 terminals Mounting torque to heatsink A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads. Weight Document Number: 94507 Revision: 01-Mar-10 For technical questions, contact: [email protected] °C/W mm 3 ± 10 % Nm 66 g www.vishay.com 3 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A 100 1000 80 100 IC (A) IC (A) 60 40 10 20 1 0 0 20 40 60 80 10 100 120 140 160 100 1000 10 000 VCE (V) T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 600 Fig. 4 - Reverse BIAS SOA TJ = 150 °C; VGE = 15 V 160 VGE = 18V 140 500 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 400 ICE (A) PD (W) 100 300 80 60 200 40 100 20 0 0 0 20 40 60 80 0 100 120 140 160 2 4 6 8 10 T C (°C) VCE (V) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 5 - Typical IGBT Output Characteristics TJ = - 40 °C; tp = 80 μs 160 1000 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 140 100 120 IC (A) 10 μs 100 μs 1 80 60 10ms 40 DC 0.1 ICE (A) 100 10 20 0.01 0 1 www.vishay.com 4 10 100 1000 10000 0 2 4 6 8 10 VCE (V) VCE (V) Fig. 3 - Forward SOA TC = 25 °C; TJ ≤ 150 °C Fig. 6 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 80 μs For technical questions, contact: [email protected] Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A 20 160 VGE = 18V 140 120 16 ICE = 20A 14 V CE (V) 100 ICE (A) ICE = 80A ICE = 40A 18 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 60 12 10 8 6 40 4 20 2 0 0 0 2 4 6 8 10 5 15 20 V GE (V) Fig. 7 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 80 μs Fig. 10 - Typical VCE vs. VGE TJ = 25 °C 20 120 ICE = 80A ICE = 40A 18 -40°C 25°C 125°C 100 16 ICE = 20A 14 V CE (V) 80 IF (A) 10 VCE (V) 60 40 12 10 8 6 4 20 2 0 0 0.0 1.0 2.0 3.0 4.0 5 5.0 10 VF (V) 20 Fig. 11 - Typical VCE vs. VGE TJ = 125 °C Fig. 8 - Typical Diode Forward Characteristics tp = 80 μs 20 350 ICE = 80A ICE = 40A 18 16 T J = 25°C 300 T J = 125°C ICE = 20A 14 250 12 ICE (A) V CE (V) 15 V GE (V) 10 8 6 200 150 100 4 50 2 0 0 5 10 15 20 0 5 10 15 20 V GE (V) VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = - 40 °C Fig. 12 - Typical Transfer Characteristics VCE = 50 V; tp = 10 μs Document Number: 94507 Revision: 01-Mar-10 For technical questions, contact: [email protected] www.vishay.com 5 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A 4800 10 000 4200 Swiching Time (ns) Energy (μJ) 3600 3000 2400 1800 EON 1200 600 tdOFF 1000 tdON tR tF 100 EOFF 0 10 0 20 40 60 80 0 100 10 20 30 40 50 60 IC (A) Rg (Ω) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 250 μH; VCE = 400 V Rg = 5 Ω; VGE = 15 V Fig. 16 - Typical Switching Time vs. Rg TJ = 150 °C; L = 250 μH; VCE = 600 V ICE = 40 A; VGE = 15 V 50 1000 Rg = 5.0Ω tdOFF 40 30 Rg = 30 Ω 20 Rg = 50 Ω Irr (A) Swiching Time (ns) Rg = 10 Ω 100 tR tdON 10 tF 10 0 0 20 40 60 80 100 10 20 30 40 50 60 IC (A) IF (A) Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 250 μH; VCE = 400 V Rg = 5 Ω; VGE = 15 V Fig. 17 - Typical Diode Irr vs. IF TJ = 125 °C 6000 70 50 EON 5000 4000 Irr (A) Energy (μJ) 40 EOFF 30 3000 20 2000 10 1000 0 10 20 30 40 50 60 0 10 20 30 40 50 Rg (Ω) Rg (Ω) Fig. 15 - Typical Energy Loss vs. Rg TJ = 150 °C; L = 250 μH; VCE = 600 V ICE = 40 A; VGE = 15 V Fig. 18 - Typical Diode Irr vs. Rg TJ = 125 °C; IF = 40 A www.vishay.com 6 For technical questions, contact: [email protected] 60 Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A 50 10000 45 Cies Capacitance (pF) 40 Irr (A) 35 30 25 1000 Coes 100 Cres 20 15 10 10 0 200 400 600 800 0 1000 20 40 Fig. 19 - Typical Diode Irr vs. dIF/dt VCC = 600 V; VGE = 15 V; ICE = 40 A; TJ = 125 °C 80 100 Fig. 21 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 5.0 16 60A 4.5 14 600V 40A 4.0 12 3.5 10 3.0 2.5 50 Ω 20A 30 Ω 2.0 VGE (V) Q rr (μC) 60 VCE (V) dIF /dt (A/μs) 10 Ω 8 6 5.0 Ω 1.5 4 1.0 2 0.5 0 0.0 0 200 400 600 800 1000 0 1200 100 200 300 400 500 dI F /dt (A/μs) Q G , Total Gate Charge (nC) Fig. 20 - Typical Diode Qrr vs. dIF/dt VCC = 600 V; VGE = 15 V; TJ = 125 °C Fig. 22 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH Thermal Response ( Z thJC ) 1 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 ττ J 0.001 0.0001 1E-005 1E-006 R1 R1 τJ ττ 1 R2 R2 ττ C τ τ1 ττ 2 ττ 3 τ2 Ci= τi/Ri τi/Ri Ci= i/Ri 0.0001 τ3 Ri (°C/W) τi τi (sec) 0.043 0.001214 0.105 0.044929 0.123 1.1977 1.1977 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE) RESPONSE ) 1E-005 R3 R3 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Document Number: 94507 Revision: 01-Mar-10 For technical questions, contact: [email protected] www.vishay.com 7 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ R2 R2 τC τ2 τ1 τ τ2 Ri (°C/W) τi (sec) 0.024 0.00008 0.549 0.000098 Ci= τi/Ri Ci i/Ri 0.01 0.001 1E-006 R1 R1 τJ τ1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE) 1E-005 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode) 3, 4 2 T 11 12 R 5, 6 1 Thermistor option only for 40MT120UHTAPbF 9 10 7, 8 Fig. 25 - Electrical diagram www.vishay.com 8 For technical questions, contact: [email protected] Document Number: 94507 Revision: 01-Mar-10 40MT120UHAPbF, 40MT120UHTAPbF "Half Bridge" IGBT MTP Vishay High Power Products (Ultrafast NPT IGBT), 80 A Driver L + - D.U.T. 0 VCC D + C - 1K 900 V D.U.T. Fig. CT.1 - Gate Charge Circuit (Turn-Off) Fig. CT.3 - S.C. SOA Circuit Diode clamp/ D.U.T. L L - + 80 V + - -5V D.U.T. + VCC D.U.T./ driver 1000 V Rg Rg Fig. CT.2 - RBSOA Circuit Document Number: 94507 Revision: 01-Mar-10 Fig. CT.4 - Switching Loss Circuit For technical questions, contact: [email protected] www.vishay.com 9 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A ORDERING INFORMATION TABLE Device code 40 MT 120 U H T A PbF 1 2 3 4 5 6 7 8 1 - Current rating (40 = 40 A) 2 - Essential part number 3 - Voltage code (120 = 1200 V) 4 - Speed/type (U = Ultrafast IGBT) 5 - Circuit configuration (H = Half bridge) 6 - Special option: None = No special option T = Thermistor 7 - A = Al2O3 DBC substrate 8 - PbF = Lead (Pb)-free CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 10 www.vishay.com/doc?95175 For technical questions, contact: [email protected] Document Number: 94507 Revision: 01-Mar-10 Outline Dimensions Vishay Semiconductors MTP Ø 1.1 20.5 12 ± 0.5 2.5 4 Ø5 3.5 DIMENSIONS in millimeters 31.8 33 2 8 7 6 5 4 3 1 13 9 10 11 1.8 12 8.1 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 R2.6 (x 3) 5.7 ± 0.1 11.35 ± 0.1 5.4 ± 0.1 11.35 ± 0.1 27.5 3 ± 0.1 45° 8.7 ± 0.1 R5.8 (x 2) 8.5 ± 0.1 6 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.25 Note • Unused terminals are not assembled in the package Document Number: 95175 Revision: 18-Mar-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1