GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Low VCE(on) • Square RBSOA • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package • Al2O3 DBC • UL approved file E78996 Dual INT-A-PAK Low Profile • Compliant to RoHS Directive 2002/95/EC • Designed for industrial level BENEFITS PRODUCT SUMMARY VCES 600 V • Increased operating efficiency IC DC at TC = 25 °C 530 A VCE(on) (typical) at 300 A, 25 °C 1.24 V • Performance optimized as output inverter stage for TIG welding machines • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC (1) TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 530 TC = 80 °C 376 Pulsed collector current ICM 800 Clamped inductive load current ILM 800 Diode continuous forward current IF Gate to emitter voltage VGE Maximum power dissipation (IGBT) PD RMS isolation voltage VISOL A TC = 25 °C 219 TC = 80 °C 145 ± 20 TC = 25 °C 1136 TC = 80 °C 636 Any terminal to case (VRMS t = 1 s, TJ = 25 °C) 3500 V W V Note (1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals Document Number: 93362 Revision: 31-May-11 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Collector to emitter leakage current Diode forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 500 μA 600 - - VGE = 15 V, IC = 150 A - 1.04 1.15 VGE = 15 V, IC = 300 A - 1.24 1.45 VGE = 15 V, IC = 150 A, TJ = 125 °C - 0.96 1.06 VGE = 15 V, IC = 300 A, TJ = 125 °C - 1.22 1.42 VCE = VGE, IC = 250 μA 2.9 4.8 6.3 VGE = 0 V, VCE = 600 V - 0.02 0.75 VGE = 0 V, VCE = 600 V, TJ = 125 °C - 1.5 10 IFM = 150 A - 1.23 1.39 IFM = 300 A - 1.48 1.75 IFM = 150 A, TJ = 125 °C - 1.17 1.33 IFM = 300 A, TJ = 125 °C - 1.50 1.77 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 9 - - 90 - V mA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss SYMBOL TEST CONDITIONS Eon IC = 300 A, VCC = 360 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 25 °C Turn-off switching loss Eoff Total switching loss Etot - 99 - Turn-on switching loss Eon - 23 - Turn-off switching loss Eoff - 133 - Total switching loss Etot - 156 - Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Diode reverse recovery time mJ IC = 300 A, VCC = 360 V, VGE = 15 V, Rg = 1.5 , L = 500 μH, TJ = 125 °C - 442 - tr - 301 - td(off) - 406 - tf - 1570 - td(on) RBSOA ns TJ = 150 °C, IC = 800 A, VCC = 400 V VP = 600 V, Rg = 22 VGE = 15 V to 0 V, L = 500 μH trr IF = 300 A, dIF/dt = 500 A/μs, VCC = 400 V, TJ = 25 °C Fullsquare - 150 179 ns - 43 59 A Diode peak reverse current Irr Diode recovery charge Qrr - 3.9 6.3 μC Diode reverse recovery time trr - 236 265 ns - 64 80 A - 8.6 11.1 μC Diode peak reverse current Irr Diode recovery charge Qrr www.vishay.com 2 IF = 300 A, dIF/dt = 500 A/μs, VCC = 400 V, TJ = 125 °C For technical questions, contact: [email protected] Document Number: 93362 Revision: 31-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA300TD60S Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.11 - - 0.4 - 0.05 - case to heatsink: M6 screw 4 - 6 case to terminal 1, 2, 3: M5 screw 2 - 4 - 270 - IGBT Junction to case per leg Diode Case to sink per module RthJC RthCS °C/W Mounting torque Nm Weight Allowable Case Temperature (°C) 600 500 IC (A) 400 300 200 TJ = 125 °C TJ = 25 °C 100 0 0.25 160 140 120 100 80 60 40 20 0.75 1.00 1.25 1.50 1.75 0 2.00 VCE (V) 100 200 300 400 500 600 IC - Continuous Collector Current (A) 93362_03 Fig. 1 - Typical Output Characteristics, TJ = 25 °C, VGE = 15 V Fig. 3 - Maximum DC IGBT Collector Current vs. Case Temperature 1.7 600 VGE = 12 V VGE = 15 V VGE = 18 V 1.6 1.5 400 A 1.4 VGE = 9 V 400 1.3 VCE (V) IC (A) DC 0 0.50 93362_01 500 g 300 1.2 300 A 1.1 1.0 200 150 A 0.9 0.8 100 0.7 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 VCE (V) 93362_02 20 40 60 80 100 120 140 160 TJ (°C) 93362_04 Fig. 2 - Typical Output Characteristics, TJ = 125 °C Document Number: 93362 Revision: 31-May-11 0.6 Fig. 4 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A 600 10 VCE = 20 V 500 TJ = 125 °C 1 TJ = 125 °C 300 ICES (mA) IC (A) 400 TJ = 25 °C 0.1 200 0.01 TJ = 25 °C 100 0 4 5 6 7 8 9 VGE (V) 93362_05 0.001 100 10 200 300 400 500 600 VCES (V) 93362_08 Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current Fig. 5 - Typical IGBT Transfer Characteristics 5.5 600 5.0 500 4.5 400 IF (A) Vgeth (V) TJ = 25 °C 4.0 TJ = 125 °C 300 200 3.5 TJ = 125 °C 3.0 100 TJ = 25 °C 2.5 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IC (mA) 93362_06 0 1.0 1000 100 10 2.0 2.5 Fig. 9 - Typical Diode Forward Characteristics Allowable Case Temperature (°C) 10 000 1.5 VFM (V) 93362_09 Fig. 6 - Typical IGBT Gate Threshold Voltage IC (A) 0.5 160 140 120 DC 100 80 60 40 20 0 1 1 10 100 VCE (V) 93362_07 93362_10 Fig. 7 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V, Rg = 22 www.vishay.com 4 0 1000 40 80 120 160 200 240 IF - Continuous Forward Current (A) Fig. 10 - Maximum DC Forward Current vs. Case Temperature For technical questions, contact: [email protected] Document Number: 93362 Revision: 31-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA300TD60S Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A Vishay Semiconductors 10 000 150 Switching Time (ns) Energy (mJ) 125 100 Eoff 75 50 25 tf 1000 td(on) td(off) tr Eon 100 0 0 50 100 150 200 250 300 IC (A) 93362_11 0 350 5 10 15 20 25 Rg (Ω) 93362_14 Fig. 11 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Fig. 14 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C, IC = 300 A, VCC = 360 V, VGE = 15 V, L = 500 μH 300 10 000 260 tf TJ = 125 °C 240 1000 td(off) trr (ns) Switching Time (ns) 280 td(on) tr 100 220 200 180 TJ = 25 °C 160 140 120 10 0 50 100 150 200 250 300 IC (A) 93362_12 100 100 200 300 400 500 600 700 800 900 1000 350 dIF/dt (A/μs) 93362_15 Fig. 12 - Typical IGBT Switching Time vs. IC, TJ = 125 °C, VCC = 360 V, Rg = 1.5 , VGE = 15 V, L = 500 μH Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt, VCC = 400 V, IF = 300 A 150 130 120 Eoff 125 110 90 80 Irr (A) Energy (mJ) 100 100 75 TJ = 125 °C 70 60 50 50 Eon 40 25 TJ = 25 °C 30 20 0 0 5 10 15 20 Rg (Ω) 93362_13 93362_16 Fig. 13 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C, IC = 300 A, VCC = 360 V, VGE = 15 V, L = 500 μH Document Number: 93362 Revision: 31-May-11 10 100 200 300 400 500 600 700 800 900 1000 25 dIF/dt (A/µs) Fig. 16 - Typical Reverse Recovery Current vs. dIF/dt, VCC = 400 V, IF = 300 A For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA300TD60S Vishay Semiconductors Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A 22 20 18 16 Qrr (μC) 14 TJ = 125 °C 12 10 8 6 TJ = 25 °C 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF/dt (A/μs) 93362_17 Fig. 17 - Typical Reverse Recovery Charge vs. dIF/dt, VCC = 400 V, IF = 300 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) 93362_18 Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93362_19 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics (Diode) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93362 Revision: 31-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 GA300TD60S Dual INT-A-PAK Low Profile "Half-Bridge" (Standard Speed IGBT), 300 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code G A 300 T D 60 S 1 2 3 4 5 6 7 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - A = Generation 4 IGBT 3 - Current rating (300 = 300 A) 4 - Circuit configuration (T = Half-bridge) 5 - Package indicator (D = Dual INT-A-PAK Low Profile) 6 - Voltage rating (60 = 600 V) 7 - Speed/type (S = Standard Speed IGBT) CIRCUIT CONFIGURATION 3 4 5 1 6 7 2 LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93362 Revision: 31-May-11 www.vishay.com/doc?95435 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. 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