VISHAY MBR2090CT_12

New Product
MBR2090CT, MBR20100CT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
TMBS ®
TO-220AB
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2090CT
MBR20100CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current at TC = 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Document Number: 89192
Revision: 30-Nov-10
total device
per diode
IF(AV)
IFSM
20
10
A
150
A
dV/dt
10 000
V/µs
TJ, TSTG
- 65 to + 150
°C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
New Product
MBR2090CT, MBR20100CT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 10 A
Maximum instantaneous forward voltage per diode
IF = 20 A
SYMBOL
UNIT
0.80
VF (1)
TC = 125 °C
V
0.65
0.75
TJ = 25 °C
Maximum reverse current per diode
at working peak reverse voltage
VALUE
TC = 25 °C
IR (2)
TJ = 100 °C
100
µA
6.0
mA
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
MBR2090CT, MBR20100CT
RθJA
60
RθJC
2.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
MBR20100CT-M3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.88
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
20
160
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
16
12
8
4
140
120
100
80
60
40
0
50
0
100
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89192
Revision: 30-Nov-10
New Product
MBR2090CT, MBR20100CT
Vishay General Semiconductor
10 000
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
1000
100
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
TJ = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10
20
30
40
50
60
70
90
80
Junction to Case
10
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
Document Number: 89192
Revision: 30-Nov-10
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Revision: 12-Mar-12
1
Document Number: 91000