MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium. (3) R1 (1) R2 Q1 Q2 R2 Features • • • • (2) (4) Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb−Free Packages are Available R1 (5) (6) 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Symbol Value Unit Collector-Base Voltage VCBO −50 Vdc Collector-Emitter Voltage VCEO −50 Vdc IC −100 mAdc Rating Collector Current SOT−363 CASE 419B STYLE 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C MARKING DIAGRAM Symbol Max Unit PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW RqJA 670 (Note 1) 490 (Note 2) °C/W Symbol Max Unit PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW mW/°C RqJA 493 (Note 1) 325 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) °C/W TJ, Tstg −55 to +150 °C September, 2005 − Rev. 6 1 xx M G = Device Code (Refer to page 2) = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2005 xx M G G mW/°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 6 1 See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MUN5111DW1T1/D MUN5111DW1T1 Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R1 (K) R2 (K) Shipping † MUN5111DW1T1 SOT−363 0A 10 10 3000/Tape & Reel MUN5111DW1T1G SOT−363 (Pb−Free) 0A 10 10 3000/Tape & Reel MUN5112DW1T1 SOT−363 0B 22 22 3000/Tape & Reel MUN5112DW1T1G SOT−363 (Pb−Free) 0B 22 22 3000/Tape & Reel MUN5113DW1T1 SOT−363 0C 47 47 3000/Tape & Reel MUN5113DW1T1G SOT−363 (Pb−Free) 0C 47 47 3000/Tape & Reel MUN5114DW1T1 SOT−363 0D 10 47 3000/Tape & Reel MUN5114DW1T1G SOT−363 (Pb−Free) 0D 10 47 3000/Tape & Reel MUN5115DW1T1 SOT−363 0E 10 ∞ 3000/Tape & Reel MUN5115DW1T1G SOT−363 (Pb−Free) 0E 10 ∞ 3000/Tape & Reel MUN5116DW1T1 SOT−363 0F 4.7 ∞ 3000/Tape & Reel MUN5116DW1T1G SOT−363 (Pb−Free) 0F 4.7 ∞ 3000/Tape & Reel MUN5130DW1T1 SOT−363 0G 1.0 1.0 3000/Tape & Reel MUN5130DW1T1G SOT−363 (Pb−Free) 0G 1.0 1.0 3000/Tape & Reel MUN5131DW1T1 SOT−363 0H 2.2 2.2 3000/Tape & Reel MUN5131DW1T1G SOT−363 (Pb−Free) 0H 2.2 2.2 3000/Tape & Reel MUN5132DW1T1 SOT−363 0J 4.7 4.7 3000/Tape & Reel MUN5132DW1T1G SOT−363 (Pb−Free) 0J 4.7 4.7 3000/Tape & Reel MUN5133DW1T1 SOT−363 0K 4.7 47 3000/Tape & Reel MUN5133DW1T1G SOT−363 (Pb−Free) 0K 4.7 47 3000/Tape & Reel MUN5134DW1T1 SOT−363 0L 22 47 3000/Tape & Reel MUN5134DW1T1G SOT−363 (Pb−Free) 0L 22 47 3000/Tape & Reel MUN5135DW1T1 SOT−363 0M 2.2 47 3000/Tape & Reel MUN5135DW1T1G SOT−363 (Pb−Free) 0M 2.2 47 3000/Tape & Reel MUN5136DW1T1 SOT−363 0N 100 100 3000/Tape & Reel MUN5136DW1T1G SOT−363 (Pb−Free) 0N 100 100 3000/Tape & Reel MUN5137DW1T1 SOT−363 0P 47 22 3000/Tape & Reel MUN5137DW1T1G SOT−363 (Pb−Free) 0P 47 22 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5111DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = −50 V, IE = 0) ICBO − − −100 nAdc Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0) ICEO − − −500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − −0.5 −0.2 −0.1 −0.2 −0.9 −1.9 −4.3 −2.3 −1.5 −0.18 −0.13 −0.2 −0.05 −0.13 mAdc Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0) V(BR)CBO −50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0) V(BR)CEO −50 − − Vdc VCE(sat) − − −0.25 Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −0.2 −4.9 − − OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = −6.0 V, IC = 0) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 ON CHARACTERISTICS (Note 3) Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA) (IC = −10 mA, IB = −5 mA) MUN5130DW1T1/MUN5131DW1T1 (IC = −10 mA, IB = −1 mA) MUN5115DW1T1/MUN5116DW1T1 MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 DC Current Gain (VCE = −10 V, IC = −5.0 mA) Output Voltage (on) (VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW) (VCC = −5.0 V, (VCC = −5.0 V, (VCC = −5.0 V, VB = −3.5 V, RL = 1.0 kW) VB = −5.5 V, RL = 1.0 kW) VB = −4.0 V, RL = 1.0 kW) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 VOL MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5113DW1T1 MUN5136DW1T1 MUN5137DW1T1 Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW) (VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW) MUN5130DW1T1 (VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW) MUN5115DW1T1 MUN5116DW1T1 MUN5131DW1T1 MUN5133DW1T1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 VOH Vdc Vdc MUN5111DW1T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 kW 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 4) (Continued) Input Resistor MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/ MUN5113DW1T1/MUN5136DW1T1 MUN5114DW1T1 MUN5115DW1T1/MUN5116DW1T1 MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5137DW1T1 R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% ALL MUN5111DW1T1 SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve − ALL DEVICES http://onsemi.com 4 150 MUN5111DW1T1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1 TA=−25°C 0.1 25°C 75°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C 100 10 50 −25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 25°C 75°C TA=−25°C 10 1 0.1 0.01 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 100 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 MUN5111DW1T1 Series 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1 IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 1 10 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10 8 9 10 Figure 10. Output Current versus Input Voltage TA=−25°C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25°C −25°C 100 10 50 40 1000 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN5111DW1T1 Series 1 1000 IC/IB = 10 TA=−25°C 25°C 75°C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1 0 10 20 30 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) −25°C 1 0.1 0.01 0.001 50 VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 10 Figure 15. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 Figure 14. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 50 MUN5111DW1T1 Series 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 −25°C 120 100 80 60 40 20 0 80 TA=75°C VCE = 10 V 160 1 2 4 6 Figure 17. VCE(sat) versus IC 100 TA=75°C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25°C TA=−25°C 75°C 1 0 10 8 10 Figure 20. Output Current versus Input Voltage 10 0.1 25°C −25°C 1 50 Figure 19. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 MUN5111DW1T1 Series 1 1000 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 TA = −25°C 100 10 1 50 25°C 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 Figure 23. DC Current Gain 12 100 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 24. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 1 25°C 75°C 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 9 50 MUN5111DW1T1 Series 1 1000 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 Figure 28. DC Current Gain 12 100 10 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 29. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 10 50 MUN5111DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1 75°C 0.1 −25°C 25°C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75°C 10 25°C TA = −25°C 1 30 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC 100 Figure 33. DC Current Gain IC, COLLECTOR CURRENT (mA) TBD 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 1 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 34. Output Capacitance 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 11 25 MUN5111DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1 75°C 0.1 −25°C 25°C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75°C TA = −25°C 1 30 25°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 12 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 V TA = 25°C 10 8 6 4 2 0 10 75°C 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 39. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 12 25 MUN5111DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 25°C 10 TA = −25°C 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 12 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 10 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 44. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 1 75°C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 13 50 MUN5111DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC 100 Figure 48. DC Current Gain 8 100 6 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 7 5 4 3 2 1 0 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 49. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage versus Output Current http://onsemi.com 14 50 MUN5111DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC 100 Figure 53. DC Current Gain 3.5 100 2.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 3 2 1.5 1 0.5 0 75°C 10 25°C 1 0.1 TA = −25°C 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 54. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 10 TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 55. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 15 50 MUN5111DW1T1 Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1 75°C 0.1 −25°C 25°C 0.01 0.001 30 20 40 10 IC, COLLECTOR CURRENT (mA) 0 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 8 6 4 2 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 59. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 58. DC Current Gain 12 10 25°C 10 1 50 TA = −25°C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage versus Output Current http://onsemi.com 16 50 MUN5111DW1T1 Series 1 0.1 −25°C 75°C 25°C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1 1000 75°C TA = −25°C 100 25°C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 25°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 1 V VO O == 55VV 0 1 2 3 4 TA = −25°C 10 VO = 0.2 V 75°C 0 2 6 7 8 9 10 Figure 65. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 64. Output Capacitance 25°C 75°C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 66. Input Voltage versus Output Current http://onsemi.com 17 20 MUN5111DW1T1 Series hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1 1 TA = −25°C 75°C 0.1 25°C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 67. VCE(sat) versus IC Figure 68. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 11 Figure 70. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 69. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 71. Input Voltage versus Output Current http://onsemi.com 18 MUN5111DW1T1 Series PACKAGE DIMENSIONS SC−88 (SOT−363) CASE 419B−02 ISSUE V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M STYLE 1: PIN 1. 2. 3. 4. 5. 6. A3 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 19 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 MUN5111DW1T1 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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