FMG2G300LS60E Molding Type Module General Description Fairchild IGBT Power Module provides low conduction as well as short circuit ruggedness. It’s designed for the applications such as welder. Features • • • • • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V Low Saturation Voltage: VCE(sat) = 1.4 V @ IC = 300A High Input Impedance Fast & Soft Anti-Parallel FWD UL Certified No.E209204 Package Code : 7PM-HA Application • AC/ DC Welder E1/C2 C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TSC TJ Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Short Circuit Withstand Time Operating Junction Temperature TSTG Storage Temperature Range VISO Isolation Voltage Power Terminal Screw : M5 Mounting Screw : M6 Mounting Torque @ TC = 100°C @ AC 1minute FMG2G300LS60E 600 ± 20 300 600 300 600 892 10 -40 to +150 Units V V A A A A W us °C -40 to +125 °C 2500 4.0 4.0 V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2004 Fairchild Semiconductor Corporation FMG2G300LS60E Rev. A FMG2G300LS60E IGBT Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 5.0 -- 6.5 1.4 8.5 1.8 V V ------------- 0.23 0.21 0.43 2.43 13 180 0.3 0.23 0.46 4.1 15 260 ------------- us us us us mJ mJ us us us us mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC =300A, VGE = 15V ---- 990 210 350 ---- nC nC nC Min. -- Typ. 1.9 Max. 2.8 Units -- 1.8 -- Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current Gate - Emitter Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector to Emitter Saturation Voltage IC = 300mA, VCE = VGE IC = 300A, VGE = 15V Switching Characteristics td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 300 V, IC = 300A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 300A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = Electrical Characteristics of DIODE Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge TC = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 300A TC = 100°C IF = 300A di / dt = 600 A/us TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 32 42 TC = 100°C -- 63 -- TC = 25°C -- 1440 2700 TC = 100°C -- 4095 -- V ns A nC Thermal Characteristics Symbol RθJC RθJC RθJC Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2004 Fairchild Semiconductor Corporation Typ. --0.035 240 Max. 0.14 0.22 --- Units °C/W °C/W °C/W g FMG2G300LS60E Rev. A FMG2G300LS60E Electrical Characteristics of IGBT 6 0 0 3 Common Emitter VGE = 15V TC = 25℃ ℃℃ TC = 125℃ ------ 5 4 0 0 2 f T f f o T 3 0 0 1 2 ] s u [ e m i T g n i h c t i w S Common Emitter VCC = 300V, VGE = ± 15V Rg = 10 Ω TC = 25℃ ℃℃ TC = 125℃ ------ 0 0 4 0 5 3 0 0 3 4 . 2 E C ] A [ IC , t n e r r u C r o t c e l l ] 0 V . [ 2 6 . 1 2 . 1 8 . 0 V , e g a t l o V r e t t i m E r o t c C e 4 l . l 0 o 0 . 0 0 o 5 C 2 0 0 12 0 Fig 1. Typical Output Characteristics Fig 2. Turn-Off Characteristics vs. Collector Current 9 . 0 8 . 0 0 0 0 1 7 . 0 n o T 0 0 1 5 . 0 4 . 0 n o E r T 3 . 0 ] J m [ s s o L g n i h c t i w S Common Emitter VCC = 300V, VGE = ± 15V Rg = 10 Ω TC = 25℃ ℃℃ TC = 125℃ ------ 0 1 2 . 0 0 0 4 0 5 3 0 0 3 ] A [ IC , t n e r r u C r o t c e l l 0 o 5 C 2 0 0 2 0 0 4 0 5 3 0 0 3 ] A [ IC , t n e r r u C r o t c e l l 0 o 5 C 2 0 0 12 . 0 Fig 3. Turn-On Characteristics vs. Collector Current Fig 4. Switching Loss vs. Collector Current 6 . 1 8 Common Emitter VCC = 300V, VGE = ± 15V Ic = 300A TC = 25℃ ℃℃ TC = 125℃ ------ n o T 0 . 1 8 . 0 f f o T 5 4 6 . 0 f T r T 4 . 0 3 ] s u [ e m i T g n i h c t i w S 2 . 1 6 Common Emitter VCC = 300V, VGE = ± 15V Ic = 300A TC = 25℃ ℃℃ TC = 125℃ ------ 4 . 1 7 ] s u [ e m i T g n i h c t i w S f f o E 6 . 0 ] s u [ e m i T g n i h c t i w S Common Emitter VCC = 300V, VGE = ± 15V Rg = 10 Ω TC = 25℃ ℃℃ TC = 125℃ ------ 2 . 0 2 0 . 0 1 0 5 0] 4 [G R , e c 0n 3a t s i s e R e G 0t 2a ©2004 Fairchild Semiconductor Corporation 0 1 Fig 5. Turn-Off Characteristics vs. Gate Resistance 0 5 0 4] [G R , e 0c 3n a t s i s e R a G 0e 2t 0 1 Ω Ω Fig 6. Turn-On Characteristics vs. Gate Resistance FMG2G300LS60E Rev. A FMG2G300LS60E 7 0 0 4 ] A [ IC , t n e r r u C r o t c e l l o C FMG2G300LS60E 5 1 ] V [ E G Common Emitter IC = 300A VCC = 300V o TC = 25 C 9 f f o E 0 0 1 6 n o E 3 0 1 V , e g a t l o V r e t t i m E e t a G 2 1 0 0 0 1 ] J m [ s s o L g n i h c t i w S Common Emitter VCC = 300V, VGE = ± 15V Ic = 300A TC = 25℃ ℃℃ TC = 125℃ ------ 0 0 0 0 1 0 0 8 0 0 2 0 0 1 Common Cathode di/dt = 600A/㎲ T C = 25℃ T C = 100℃ Irr trr 0 1 5 0 0 0 3 0 5 2 0 0 2 0 5 1 0 0 1 0 5 0 8 . 2 4 . 2 ] A [ IF , t n e r r u C d r a w r o F VF 0 ] . V 2 [ g a 6 . , 1 e d t l 2 o . 1 V r o F r 8 a . w 0 4 . 0 0 . 0 ] A ] [ s rn r I 0 1 x , [ t n r e r r T r u C , e m y r T e i v o y c r e e R v o e c e s R r e v e e r s R e k v a e e R P 0 0 1 0 0 3 Fig 9. Forward Characteristics (diode) Fig 8. Gate Charge Characteristics 0 0 2 0 0 4 Common Cathode VGE = 0V TC = 25℃ TC = 125℃ ©2004 Fairchild Semiconductor Corporation 0 0 6 ] C n [ g Q , e g r a h C e t a G ] [G R , e c n a t s i s e R e t a G Fig 7. Switching Loss vs. Gate Resistance ] A [ F I , t n e r r u C d r a w r o F 0 0 4 0 0 2 0 0 5 0 4 0 3 0 2 0 1 Ω Fig 10. Reverse Recovery Characteristics(diode) FMG2G300LS60E Rev. A FMG2G300LS60E Package Dimension 7PM-HA 23.0 ±0.50 23.0 ±0.50 2- Ø6.5 ±0.30 18.0 ±0.60 13.0 ±0.60 40.0 ±0.50 26.0 ±0.60 G2 E2 E1 48.0 ±0.60 Mounting-Hole G1 3-M5 80.0 ±0.50 94.0 ±0.50 Name Plate 8.00 ±0.50 Ø1.3 28.0 ±0.50 +0.20 5.95 ±0.60 30.0 -0.60 +0.20 3-10.0 ±0.50 +0.00 2.80 -0.50 *0.5t 22.0 -0.60 3-16.0 ±0.50 45.5 ±0.50 ©2004 Fairchild Semiconductor Corporation FMG2G300LS60E Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11