IGBT FM2G50US60 Molding Type Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required. Features • • • • • Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 50A High Input Impedance Fast & Soft Anti-Parallel FWD Package Code : 7PM-AA Application • • • • • E1/C2 AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS C1 E2 G1 E1 G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FM2G50US60 600 ± 20 50 100 50 100 10 250 -40 to +150 -40 to +125 2500 2.0 2.0 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2000 Fairchild Semiconductor International FM2G50US60 Rev. A FM2G50US60 September 2000 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 0V, IC = 50mA 5.0 6.0 8.5 V IC = 50A, VGE = 15V -- 2.2 2.8 V VCE = 30V, VGE = 0V, f = 1MHz ---- 3460 480 140 ---- pF pF pF --------------- 32 67 66 118 1.8 1.0 2.8 33 68 68 261 2.41 2.31 4.72 --100 200 --3.8 --110 400 --6.65 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 50A, VGE = 15V ---- 145 28 65 210 40 95 nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2000 Fairchild Semiconductor International VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 50A, RG = 5.9Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = FM2G50US60 Rev. A FM2G50US60 Electrical Characteristics of IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 50A TC = 100°C IF = 50A di / dt = 100 A/us Min. -- Typ. 1.9 Max. 2.8 -- 1.8 -- TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 5 6.5 TC = 100°C -- 7 -- TC = 25°C -- 225 422 TC = 100°C -- 455 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2000 Fairchild Semiconductor International Typ. --0.05 -- Max. 0.5 1.0 -190 Units °C/W °C/W °C/W g FM2G50US60 Rev. A FM2G50US60 Electrical Characteristics of DIODE T 140 15V Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 120 Collector Current, I C [A] Collector Current, IC [A] 120 12V 100 80 60 VGE = 10V 40 100 80 60 40 20 20 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, VCE [V] Fig 2. Typical Saturation Voltage Characteristics 5 60 VCC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 50 4 100A 3 50A 2 IC = 30A Load Current [A] Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 1 40 30 20 10 Duty cycle : 50% TC = 100℃ Power Dissipation = 70W 0 0 -50 0 50 100 1 150 10 100 1000 Frequency [KHz] Case Temperature, T C [℃] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 25℃ Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, V CE [V] FM2G50US60 20V Common Emitter T C = 25℃ 140 16 12 8 100A 4 50A IC = 30A 0 Common Emitter TC = 125℃ 16 12 8 100A 4 50A IC = 30A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2000 Fairchild Semiconductor International 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FM2G50US60 Rev. A Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 6000 5000 Common Emitter V CC = 300V, V GE = ± 15V IC = 50A T C = 25℃ ━━ T C = 125℃ ------ Ton Switching Time [ns] Capacitance [pF] FM2G50US60 1000 7000 Cies 4000 3000 Coes 2000 Tr 100 Cres 1000 0 1 10 10 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 10000 Common Emitter V CC = 300V, V GE = ± 15V IC = 50A T C = 25℃ ━━ T C = 125℃ ------ Common Emitter VCC = 300V, V GE = ± 15V IC = 50A TC = 25℃ ━━ TC = 125℃ ------ Toff Switching Loss [uJ] Switching Time [ns] 1000 100 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Toff Tf Eon Eoff Eoff 1000 Tf 100 10 10 100 Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 1000 Common Emitter V GE = ± 15V, RG = 5.9Ω T C = 25℃ ━━ T C = 125℃ ------ Ton Switching Time [ns] Switching Time [ns] 100 Gate Resistance, R G [Ω ] Gate Resistance, R G [Ω ] Tr 100 Toff Tf Toff 100 Tf Common Emitter VGE = ± 15V, RG = 5.9 Ω TC = 25℃ ━━ TC = 125℃ ------ 10 10 20 30 40 50 60 70 80 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2000 Fairchild Semiconductor International 90 100 10 20 30 40 50 60 70 80 90 100 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FM2G50US60 Rev. A Switching Loss [uJ] Eon Eoff 1000 Gate - Emitter Voltage, V GE [ V ] Common Emitter V CC = 300V, V GE = ± 15V RG = 5.9 Ω TC = 25℃ TC = 125℃ 10000 100 20 40 60 80 Common Emitter R L = 5.9 Ω T C = 25℃ 12 200 V 6 3 0 100 0 40 80 120 160 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 300 300 IC MAX. (Pulsed) 100 50us IC MAX. (Continuous) 100 100us Collector Current, I C [A] Collector Current, I C [A] 300 V VCC = 100 V 9 Collector Current, IC [A] 1㎳ 10 DC Operation 1 0.1 FM2G50US60 15 20000 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linerarly with increase in temperature 0.3 1 10 Safe Operating Area o V GE = 20V, T C = 100 C 10 100 1 1000 1 10 Collector-Emitter Voltage, VCE [V] 100 1000 Collector-Emitter Voltage, V CE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 300 1 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 100 10 1 Single Nonrepetitive Pulse T J ≤ 125℃ V GE = 15V RG = 5.9 Ω 0.1 0 100 200 0.01 T C = 25℃ IGBT : DIODE : 1E-3 300 400 500 Collector-Emitter Voltage, V CE [V] Fig 17. RBSOA Characteristics ©2000 Fairchild Semiconductor International 0.1 600 700 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FM2G50US60 Rev. A Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, T rr [x10ns] 120 Forward Current, I F [A] Common Cathode V GE = 0V T C = 25℃ T C = 125℃ 80 40 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2000 Fairchild Semiconductor International 3 4 Trr 10 Irr 5 Common Cathode di/dt = 100A/㎲ T C = 25℃ T C = 100℃ 2 0 10 20 30 40 50 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FM2G50US60 Rev. A FM2G50US60 20 160 FM2G50US60 Package Dimension 30$$)63.*&2'(%' 12 E2 23 4 E1 E2 34 4 G2 17 C1 C2E1 G1 23 2-∅5.4 Mounting Hole 6.5 80±0.1 3-M5 DP8.5 93 7 16 TAP Terminal -110(t0.5) Max. 31.0 16 23.5 7 23 16 Dimensions in Millimeters ©2000 Fairchild Semiconductor International FM2G50US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. F1