MRF150 SILICON RF POWER MOSFET DESCRIPTION: PACKAGE STYLE .500 4L FLG The MRF150 is an N-Channel Enhancement-Mode MOS Broadband RF Ppwer Transistor Designed for Wideband Large Signal Amplifier Applications From 2.0 to 150 MHz. .112x45° L A S FULL R D Ø.125 NOM. C B G MAXIMUM RATINGS E H ID 16 A VDSS 125 V VGS ± 40 V PDISS 300 W @ TC = 25 C O O O -65 C to +150 C O inches / mm inches / mm A .220 / 5.59 .230 / 5.84 CHARACTERISTICS MAXIMUM .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K 10 C/W K MINIMUM B O -65 C to +200 C θJC F DIM E TSTG G I J O TJ S D L O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V(BR)DSS ID = 100 mA VGS = 0 V IDSS VDSS = 50 V VGS = 0 V 5.0 mA IGSS VGS = 20 V VDS = 0 V 1.0 µA VGS(th) VDS = 10 V ID = 100 mA 1.0 5.0 V gfs VDS = 10 V ID = 100 mA 4 Ciss Coss Crss Gps η ψ VDS = 50 V VGS = 0 V VDD = 50 V IDQ = 250 mA V 125 f = 1.0 MHz Pout = 150 W (PEP) 45 Fo = 30 & 30.001 MHz VSWR = 30:1 AT ALL PHASE ANGLES mho 350 250 50 pF 17.0 50 dB % NO DEGRADRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1