MRF160 POWE FIELD EFFECT TRANSISTOR PACKAGE STYLE .280 4L PILL DESCRIPTION: The MRF160 is an EnhancementMode N-Channel TMOS designed for wideband large-signal amplifier and oscillator applications to 500 MHz. MAXIMUM RATINGS ID 0.5 mA VDSS 65 V VGS ±40 V PDISS 8.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 13.2 °C/W CHARACTERISTICS Style 3 NONE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM 65 TYPICAL MAXIMUM UNITS V(BR)DSS ID = 5.0 mA VGS = 0 V IDSS VDSS = 28 V VGS = 0 V 0.5 mA IGSS VGS = 40 V VDS = 0 V 1.0 µA VGS(th) VDS = 10 V ID = 10 mA 1.0 6.0 V gfs VDS = 10 V ID = 100 mA 50 Ciss Coss Crss VDS = 28 V VGS = 0 V NF VDS = 28 V ID = 100 mA f = 400 MHz ZL = 14.5+j = 25.7 ZS = 67.7+j = 14.1 Gps η VDD = 28 V Pout = 2.0 W ψ V mmhos 3.0 4.2 0.45 f = 1.0 MHz IDQ = 100 mA f = 400 MHz IDQ = 100 mA VDD = 28 V VSWR = 30:1 at all phase angles Pout = 2.0 W f = 400 MHz 3.0 16 45 20 55 pF dB dB % NO DEGRADRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1