WEITRON MJE13003B High Voltage Fast-switching NPN Power Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE 3. BASE DESCRIPTION: 1. EMITTER The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. TO-92 It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is designed for use in compact fluorescent lamp application. FEATURE: * Medium Voltage Capability * Low Spread Of Dynamic Parameters * Minimum Lot-to-lot Spread For Reliable Operation * Very High Switching Speed APPLICATIONS: * Electronic Ballasts For Fluorescent Lighting ABSOLUTE MAXIMUM RATINGS P a r am e t e r Symbol Value U ni t Collector-Emitter Voltage (V BE = 0 ) V CES 700 V Collector-Emitter Voltage (I B = 0 ) V CEO 400 V Emitter-Base Voltage (I C = 0 ) V EBO 9 V IC 1 A I CM 2 A IB 0.5 A Base Peak Current (t p < 5 m s ) I BM 1 A Total Dissipation at T amb = 25 o C Thermal Resistance Junction-ambient P tot 1 W R θJA 120 Tj 150 o C - 65 t o 1 5 0 o C C ol l e c t o r C u r r en t Collector Peak Current (t p < 5 m s ) Ba s e C u rr e n t O p e ra t i n g J u n c t i on T e m p er a t u re St o r a ge T e m p er a t u re WEITRON hpp://www.weitron.com.tw T stg 1/4 o C/W 16-May-08 MJE13003B ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Parameter Symbol Max. Unit I CEV 1 5 mA mA 1 mA Collector Cut-off Current (V BE = -1.5V) V CE = 700 V V CE = 700 V Emitter Cut-off Current (I C = 0) V EB = 9 V I EBO Collector-Emitter Sustaining Voltage (I B = 0) I C = 1 mA L = 25mH V CEO(sus) Collector-Emitter Saturation Voltage I C = 0.25 A I C = 0.5 A I C = 0.75 A I B = 0.05 A I B = 0.125 A I B = 0.25 A V CE(sat) Base-Emitter Saturation Voltage I C = 0.25 A I C = 0.5 A I B = 0.05 A I B = 0.125 A V BE(sat) DC Current Gain I C = 0.4 A I C = 0.8 A V CE = 5 V V CE = 5 V INDUCTIVE LOAD Fall Time I C = 0.25 A V clamp = 300 V I B1 = -I B2 = 50 mA L = 3 mH T j = 125 o h FE tf Min. Typ. V 400 0.2 0.3 0.4 10 5 0.5 1 1.5 V V V 1 1.2 V V 30 20 0.3 µs Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % Ratings and Characteristic Curves Fig.1 Safe Operating Area WEITRON hpp://www.weitron.com.tw Fig.2 Derating Curve 2/4 16-May-08 MJE13003B Fig.3 DC Current Gain VCE=3V Fig.4 DC Current Gain VCE=5V Fig.5 Collector Emitter Saturation Voltage Fig.6 Base Emitter Saturation Voltage Fig.7 Switching Time Inductive Load WEITRON hpp://www.weitron.com.tw 3/4 16-May-08 MJE13003B TO-92 Outline Dimensions unit:mm E H TO-92 Dim A B C D E G H J K L L C J K D A B G Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 WEITRON http://www.weitron.com.tw 4/4 16-May-08