STMICROELECTRONICS STBV42

STBV42
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STBV42 is designed for use in compact
fluorescent lamp application.
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
700
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
1
A
Collector Peak Current (t p < 5 ms)
2
A
0.5
A
IC
I CM
IB
Base Current
I BM
Base Peak Current (t p < 5 ms)
1
A
P tot
Total Dissipation at T amb = 25 o C
1
W
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
September 2001
-65 to 150
o
C
150
o
C
1/5
STBV42
THERMAL DATA
R thj-amb
Thermal Resistance Junction-ambient
Max
o
120
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CEV
Collector Cut-off
Current (V BE = -1.5V)
V CE = 700 V
V CE = 700 V
I EBO
Emitter Cut-off
Current (I C = 0)
V EB = 9 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 1 mA
L = 25mH
I C = 0.25 A
I C = 0.5 A
I C = 0.75 A
I B = 0.05 A
I B = 0.125 A
I B = 0.25 A
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.25 A
I C = 0.5 A
I B = 0.05 A
I B = 0.125 A
DC Current Gain
I C = 0.4 A
I C = 0.8 A
V CE = 5 V
V CE = 5 V
INDUCTIVE LOAD
Fall Time
I C = 0.25 A
I B1 = -I B2 = 50 mA
V clamp = 300 V
L = 3 mH
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Safe Operating Area
2/5
Max.
Unit
1
5
mA
mA
1
mA
400
Collector-Emitter
Saturation Voltage
tf
Typ.
T j = 125 o
V CE(sat) ∗
h FE ∗
Min.
Derating Curve
V
0.2
0.3
0.4
10
5
0.5
1
1.5
V
V
V
1
1.2
V
V
30
20
0.3
µs
STBV42
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
3/5
STBV42
TO-92 MECHANICAL DATA
mm
inch
DIM.
MIN.
MAX.
MIN.
TYP.
MAX.
A
4.58
5.33
0.180
0.210
B
4.45
5.2
0.175
0.204
C
3.2
4.2
0.126
0.165
D
12.7
E
4/5
TYP.
0.500
1.27
F
0.4
G
0.35
0.050
0.51
0.016
0.14
0.020
STBV42
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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