STMICROELECTRONICS ST13007FP

ST13007FP

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
■
■
■
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HIGH VOLTAGE CAPABILITY
NPN TRANSISTOR
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125 oC
LARGE RBSOA
3
APPLICATIONS
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ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
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SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance
switching speeds.
1
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CEV
Collector-Emitter Voltage (V BE = -1.5V)
700
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
Collector Current
8
A
16
A
4
A
IC
I CM
IB
Collector Peak Current
Base Current
I BM
Base Peak Current
P t ot
Total Dissipation at T c ≤ 25 C
T stg
Storage Temperature
Tj
June 1998
o
Max. O perating Junction Temperature
8
A
36
W
-65 to 150
o
C
150
o
C
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ST13007FP
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-case
Max
o
3.47
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CEV
I EBO
Parameter
Collector Cut-off
Current (V BE = -1.5V)
V CE = rated V CEV
V CE = rated V CEV
Emitter Cut-off Current
(I C = 0)
V EB = 9 V
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
V CE(sat )∗
V BE(s at)∗
h FE∗
ts
tf
ts
tf
Test Cond ition s
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
o
I C = 10 mA
IC
IC
IC
IC
=
=
=
=
2
5
8
5
A
A
A
A
Typ .
T c = 100 C
Max.
Un it
1
5
mA
mA
1
mA
400
IB
IB
IB
IB
=
=
=
=
0.4 A
1 A
2 A
1 A
V
Tc = 100 oC
IC = 2 A
IC = 5 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 1 A
IC = 2 A
Group A
Group B
IC = 5 A
V CE = 5 V
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 5 A
I B1 = 1 A
L = 200 µH
V CL = 250 V
IB2 = -2 A
INDUCTIVE LOAD
Storage Time
Fall T ime
IC = 5 A
I B1 = 1 A
L = 200 µH
V CL = 250 V
IB2 = -2 A
o
T c = 125 C
DC Current G ain
Min.
o
Tc = 100 C
V CE = 5 V
15
26
5
1
2
3
3
V
V
V
V
1.2
1.6
1.5
V
V
V
28
40
30
1.6
60
2.3
110
2.5
110
ms
ns
µs
ns
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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ST13007FP
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
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ST13007FP
Inductive Fall Time
Reverse Biased SOA
4/6
Inductive Storage Time
ST13007FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
L4
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ST13007FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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