TIGER ELECTRONIC CO.,LTD Product specification BUL128D HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NPN TRANSISTOR HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ DESCRIPTION ■ ■ APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting ABSOLUTE MAXIMUM RATINGS Parameter ol Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9.0 V Collector Current IC 4.0 A Base Current IB 2.0 A Ptot 70 W Tj 150 o Tstg -65~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C TO-220AB C (Tcase = 25 ℃ unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICES VCE=700V, IE=0 — — 0.25 mA Emitter Cut-off Current IEBO VEB=9V, IC=0 — — 0.1 mA Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0 400 — — V V Emitter-Base BreakdownVoltage (IC=0) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time BVEBO IE=10mA 9 — 18 hFE(1) VCE=5V, IC=2.0A 12 — 32 hFE(2) VCE=5V, IC=10mA 10 — — IC=1.0A,IB=0.2A — — 1.0 IC =4.0A, IB=1.0A — 0.5 — IC=1.0A,IB=0.2A — — 1.2 IC =2.5A,IB=0.5A — — 1.3 IC=2.0A IB1=-IB2=0.4A 2.0 — 2.9 VCE(sat) VBE(sat) TS V V us