TIGER ELECTRONIC CO.,LTD Product specification BUL128 HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power ABSOLUTE MAXIMUM RATINGS Parameter ol Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Collector Current IC 4.0 A Base Current IB 2.0 A Ptot 70 W Tj 150 o Tstg -65~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C TO-220AB C (Tcase = 25 ℃ unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICES VCE=700V, IE=0 — — 0.1 mA Emitter Cut-off Current IEBO VEB=9V, IC=0 — — 0.1 mA Collector-Emitter Sustaining Voltage VCEO IC=100mA, IB=0 400 — — V Emitter-Base Voltage (IC=0) VEBO IE=10mA 9 — — V hFE(1) VCE=5V, IC=2.0A 14 — 40 hFE(2) VCE=5V, IC=10mA 10 — — IC=1.0A,IB=0.2A — — 1.0 IC =4.0A, IB=1.0A — — 1.5 IC=1.0A,IB=0.2A — — 1.2 IC =2.5A,IB=0.5A — — 1.3 IC=2.5A IB1=-IB2=0.5A 1.5 — 3.0 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time VCE(sat) VBE(sat) TS V V us