isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12004 DESCRIPTION · Collector-Emitter VoltageVCEX = 1500V ·Safe Operation Area ·Switching Time with Inductive Load APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 4 A IE Emitter Current-Continuous 9 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ VEBO B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ12004 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=4.5A; IB= 1.8A 5.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=3.5A; IB= 1.5A 5.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.8A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC=3.5A; IB= 1.5A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 mA hFE DC Current Gain IC= 0.5A ; VCE= 5V 12 Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest=1.0MHz 4 MHz Output Capacitance IE= 0; VCB= 10V; ftest=0.1MHz 125 pF Fall Time IC=4.5A , IB1=1.8A; LB=8μH 0.4 fT COB tf isc Website：www.iscsemi.cn CONDITIONS B 2 MIN TYP. MAX 750 UNIT V 1.0 μs