ISC 2N4910

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N4910
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 40V(Min)
·Low Collector Saturatioin Voltage: VCE(sat)= 0.6V(Max.)@ IC= 1A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for driver circuits, switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
4
A
IB
Collector Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
200
℃
-65~200
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
7.0
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2N4910
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
1.3
V
VBE(on)
Base-Emitter On Voltage
IC= 1A ; VCE= 1V
1.3
V
ICEX
Collector Cutoff Current
VCE= 40V;VBE(off)= 1.5V
VCE= 40V;VBE(off)= 1.5V;TC=150℃
0.1
1.0
mA
ICEO
Collector Cutoff Current
VCE= 20V; IB= 0
0.5
mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 50mA ; VCE= 1V
40
hFE-2
DC Current Gain
IC= 500mA ; VCE= 1V
20
hFE-3
DC Current Gain
IC= 1A ; VCE= 1V
10
Current-Gain—Bandwidth Product
IC= 0.25A; VCE= 10V, ftest= 1MHz
3
Output Capacitance
IE= 0; VCB= 10V; ftest= 100kHz
fT
COB
isc Website:www.iscsemi.cn
CONDITIONS
2
MIN
TYP.
MAX
40
UNIT
V
100
MHz
100
pF