NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si *(/,* " +- `= QY&ejb V # MIG;C ; : K: IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8<G;; B;7: FB7I?D= 0 E& 1 9 EC FB?7DI; available in Halogen free mold compounda) V / J7B !<?;: 79 9 EG : ?D= IE ( # "# !+$ JA'NI,/, CoolMOS CP is designed for: V & 7G: 1 E<IHL?I9 >?D= 1 + . 1 IEFEB E=?;H V "!+ . $ ! <EG *7C F 87BB 7HI V . 5 + <EG *7C F 7BB 7HI . ". 7D: *!" 24 Type Package Marking CJ>/*L/,*=J JA'NI,/, /L/,*J Maximum ratings, 7IT \ Y! JDB;HH EI>;G L?H; HF;9 ?<?;: Parameter Symbol Conditions !EDI?DJEJH : G7?D 9 JGG ;DI I> Value T = Y! 1&+ T = Y! .&/ ,$ . JB H;: : G7?D 9 JGG ;DI I >&bf^dW T = Y! +/ K7B 7D9 >; ;D;G=N H?D=B ; FJB H; E ;M I > V >> 4 +00 K7B 7D9 >; ;D;G=N G;F;I?I?K;t ;L,$&-$ E ;L I > V >> 4 *&,/ K7B 7D9 >; 9 JGG;DI G;F;I?I?K; t ;L,$&-$ I ;L + - 1 $ # 2 : v )Vt GJ==;: D;HH : v )Vt % 7I; HEJG 9 ; KEB I7=; V AM . EL;G: ?HH?F7I?ED P eae - F;G7I?D= 7D: HIEG 7=; I;C F;G 7IJG ; T \ T deY a) Unit ; _D ,&/ ; V >M 4 /* P)`d deSe[U v,* P ! f & O v-* T = Y! 00 Q u= non-Halogen free (OPN: IPD50R520CPBT); Halogen free (OPN: IPD50R520CPAT) 0 ;K 2.1 F7=; 2013-07-31 IPD50R520CP Maximum ratings, 7IT \ Y! JDB;HH EI>;G L?H; HF;9 ?<?;: Parameter Symbol Conditions !EDI?DJEJH : ?E: ; <EGL7G: 9 JGG;DI IM Value Unit -&2 ; T = Y! "?E: ; FJBH; 9 JGG ;DI,$ I M&bf^dW +/ 0 ;K;G H; : ?E: ; : v )Vt .$ Vv )Vt +/ P)`d Parameter Symbol Conditions Values Unit min. typ. max. ' ' +&3 ^WSVWV ' ' 0, C C ?D <GEC 9 7H; <EG H ' ' ,0* u= /** ' ' P Thermal characteristics 2>;GC 7BG;H?HI7D9 ; @JD9 I?ED 9 7H; R eZD= 2>;GC 7BG;H?HI7D9 ; @JD9 I?ED S_T[W`e R eZD; 1 EB: ;G?D= I;C F;G7IJG; T da^V L7K;HEB: ;G?D= EDB N 7B BEL;: 7IB;7: H E)Q Electrical characteristics, 7IT \ Y! JDB;HH EI>;GL?H; HF;9 ?<?;: Static characteristics > 7? "G [DHEJG 9 ;T 8G;7A ]V : ELD KEB ^eI7=; V #<L$>MM V AM7* *P P I >7,/* ,/* w; [; % 7I; I>G;H>EB : KEBI7=; V AM#eZ$ V >M7V AM I > C ,&/ - -&/ 6;G E =7I; KEB I7=; : G7?D 9 JGG ;DI I >MM V >M 4 V AM 4 T \ Y! ' ' + V >M 4 V AM 4 T \ Y! ' +* ' w; % 7I;HEJG9 ;B ;7A7=; 9 JGG ;DI I AMM V AM 4 V >M 4 ' ' +** `; "G7?DHEJG 9 ; EDHI7I; G;H?HI7D9 ; R >M#a`$ V AM 4 I > T \ Y! ' *&.1 *&/, " V AM 4 I > T \ Y! ' +&, ' f + & O EF;D : G7?D ' ,&, ' % 7I; G;H?HI7D9 ; 0 ;K 2.1 RA F7=; " 2013-07-31 IPD50R520CP Parameter Values Symbol Conditions Unit min. typ. max. ' 02* ' ' -+ ' ' ,3 ' Dynamic characteristics 'DFJI9 7F79 ?I7D9 ; C [dd - JIFJI9 7F79 ?I7D9 ; C add # <<;9 I?K; EJIFJI9 7F79 ?I7D9 ; ;D;G =N C a#Wc$ 0$ cW^SeWV V AM 4 V >M 4 f + & O b@ V AM 4 V >M 4 IE 4 # <<;9 I?K; EJIFJI9 7F79 ?I7D9 ; I?C ; 1$ cW^SeWV C a#ec$ ' 0- ' 2JG DED : ;B 7N I?C ; t V#a`$ ' -/ ' 0 ?H; I?C ; tc ' +. ' 2JG DE<<: ;B 7N I?C ; t V#aXX$ ' 2* ' $ 7B BI?C ; tX ' +1 ' % 7I; IE HEJG9 ;9 >7G=; Q Yd ' - ' % 7I; IE : G7?D 9 >7G =; Q YV ' / ' % 7I; 9 >7G =; IEI7B QY ' +- +1 % 7I; FB7I;7J KEB I7=; V b^SeWSf ' /&, ' P ' *&3 +&, P ' ,.* ' `d ' +&0 ' w= ' +- ' ; V >> 4 V AM 4 I > R A " `d % 7I; !>7G=; !>7G79 I;G?HI?9 H V >> ** 4 & I > 2 & V AM IE 4 `= Reverse Diode "?E: ; <EGL7G : KEBI7=; V M> 0 ;K;G H; G;9 EK;GN I?C ; t cc 0 ;K;G H; G;9 EK;GN 9 >7G=; Q cc . ;7AG;K;G H; G;9 EK;GN 9 JGG ;DI I cc_ V AM 4 I @ T \ Y! V L 4 I @7I M Vi @)Vt [ H +$ ( 1 2" 7D: ( # 1 " ,$ . JB H; L?: I> t b B ?C ?I;: 8N T \&_Si -$ 0 ;F;I?I ?K; 7K7B7D9 >; 9 7JH;H 7: : ?I?ED7BFEL;GBEHH;H I >7I9 7D 8; 9 7B 9 JB 7I;: 7H P ;P7E ;L%f. .$ I M>"I > : i )Vt " [ H V >=^[`] 4 V bWS]6V #<L$>MM T \6T \_Si ?: ;DI?9 7BB EL 7D: >?=> H?: ; HL?I9 > /$ C a#Wc$ ?H 7 <?M;: 9 7F79 ?I7D9 ;I >7I=?K;H I>; H7C ; HIEG;: ;D;G=N 7H C add L>?B; V >M ?H G?H?D= <GEC IE V >MM( 0$ C a#ec$ ?H 7 <?M;: 9 7F79 ?I7D9 ;I >7I=?K;H I>; H7C ; 9 >7G=?D= I?C ; 7H C add L>?B; V >M ?H G?H?D= <GEC IE V >MM( 0 ;K 2.1 F7=; 2013-07-31 IPD50R520CP 1 Power dissipation 2 Safe operating area P eae7X#T =$ I >7X#V >M T = Y! D 7* F7G7C ;I;G tb 102 70 60 B?C ?I;: 8N EDHI7I; cWd[deS`UW [H 50 [H 40 [H ID [A] Ptot [W] 101 C H 30 C H 100 >= 20 10 10-1 0 0 25 50 75 100 125 150 100 175 101 TC [°C] 102 103 VDS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics R#eZD=$7X#eb I >7X#V >M T \ Y! F7G7C ;I;G D=t b)T F7G7C ;I;G V AM 101 20 4 4 4 15 *(/ 100 4 ID [A] ZthJC [K/W] *(, *(+ *(*/ 4 10 *(*, 10-1 *(*+ 4 H?D=B;FJBH; 5 4 4 10-2 0 10-5 10-4 10-3 10-2 10-1 100 tp [s] 0 ;K 2.1 0 5 10 15 20 VDS [V] F7=; 2013-07-31 IPD50R520CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I >7X#V >M T \ Y! R >M#a`$7X#I > T \ Y! F7G7C ;I;G V AM F7G7C ;I;G V AM 2 12 4 4 4 1,9 4 10 4 4 4 1,8 4 4 1,7 8 4 RDS(on) [ ] ID [A] 4 6 1,6 1,5 4 1,4 4 1,3 4 2 1,2 1,1 0 0 5 10 15 20 0 25 2 4 6 VDS [V] 8 10 12 14 ID [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R >M#a`$7X#T \ I > V AM 4 I >7X#V AM PV >Ml8,lI >lR >M#a`$_Si F7G7C ;I;G T \ 1,4 25 1,3 Y! 1,2 20 1,1 15 0,9 ID [A] RDS(on) [ ] 1 0,8 0,7 Y! 10 ejb 0,6 0,5 5 0,4 0,3 0,2 0 -60 -20 20 60 100 140 180 Tj [°C] 0 ;K 2.1 0 2 4 6 8 10 VGS [V] F7=; 2013-07-31 IPD50R520CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V AM7X#Q YSeW I > FJB H;: I @7X#V M>$ F7G7C ;I;G V >> F7G7C ;I;G T \ 102 10 9 8 Y! 4 7 Y! Y! 101 Y! 4 IF [A] VGS [V] 6 5 4 100 3 2 1 10-1 0 0 5 10 0 15 0,5 1 Qgate [nC] 1,5 VSD [V] 12 Drain-source breakdown voltage E ;M7X#T \ I > V >> 4 V <L#>MM$7X#T \ I > C 175 580 150 560 125 540 VBR(DSS) [V] EAS [mJ] 11 Avalanche energy 100 75 520 500 50 480 25 460 0 440 25 75 125 175 Tj [°C] 0 ;K 2.1 2 -60 -20 20 60 100 140 180 Tj [°C] F7=; 2013-07-31 IPD50R520CP 13 Typ. capacitances 14 Typ. Coss stored energy C 7X#V >M V AM 4 f + & O E add= X(V >M) 4 104 =[dd 3 Eoss [µJ] C [pF] 103 102 =add 101 2 1 =cdd 100 0 0 100 200 300 400 500 VDS [V] 0 ;K 2.1 0 100 200 300 400 500 VDS [V] F7=; 2013-07-31 IPD50R520CP Definition of diode switching characteristics 0 ;K 2.1 F7=; 2013-07-31 IPD50R520CP PG-TO252-3-1/PG-TO252-3-11/PG-TO252-3-21 (D-PAK) 0 ;K 2.1 F7=; 2013-07-31 IPD50R520CP Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office #hhh([`X[`Wa`(Ua_$( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are i t d d to intended t be b implanted i l t d iin th the h human b body d or tto supportt and/or d/ maintain i t i and d sustain t i and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 0 ;K 2.1 F7=; 2013-07-31