PD – 96114A IRF7805QPbF Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free l l l l l l l Description These HEXFET® Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Device Features IRF7805Q VDS 30V RDS(on) 11mΩ Qg 31nC Qsw 11.5nC Qoss 36nC Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ± 12 ID @ TA = 25°C 13 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 100 PD @TA = 25°C Power Dissipation 2.5 ID @ TA = 70°C e e PD @TA = 70°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A 10 c W 1.6 W/°C °C 0.02 -55 to + 150 Thermal Resistance Parameter RθJL RθJA www.irf.com h Junction-to-Ambient eh Junction-to-Drain Lead Typ. Max. Units ––– 20 °C/W ––– 50 1 08/09/10 IRF7805QPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units RDS(on) VGS(th) h Static Drain-to-Source On-Resistanceh Gate Threshold Voltage h IDSS Drain-to-Source Leakage Current BVDSS Drain-to-Source Breakdown Voltage ––– ––– V VGS = 0V, ID = 250µA ––– 1.0 9.2 ––– 11 3.0 mΩ V VGS = 4.5V, ID = 7.0A VDS = VGS, ID = 250µA ––– ––– ––– ––– 70 10 µA VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– 150 100 Qg Gate-to-Source Reverse Leakage Total Gate Charge ––– ––– ––– 22 -100 31 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 3.7 1.4 ––– ––– ––– ––– 6.8 8.2 ––– 11.5 Qoss Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge ––– 3.0 RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time 0.5 ––– ––– ––– 16 20 td(off) tf Turn-Off Delay Time Fall Time ––– ––– 38 16 ––– ––– h Qgs1 Qgs2 Qgd Qsw h h Conditions 30 nA VDS = 24V, VGS = 0V, TJ = 100°C VGS = 12V VGS = -12V VGS = 5.0V nC VDS = 16V ID = 7.0A 3.6 nC VDS = 16V, VGS = 0V 1.7 ––– ––– Ω ns d VDD = 16V, VGS = 4.5V ID = 7.0A e RG= 2Ω Resistive Load Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD Qrr (Body Diode) Diode Forward Voltage Reverse Recovery Charge c h Qrr(s) Reverse Recovery Charge (with Parallel Schottky) f f ––– ––– A showing the integral reverse p-n junction diode. TJ = 25°C, IS = 7.0A, VGS = 0V di/dt = 700A/µs ––– ––– 106 ––– ––– 88 1.2 V ––– ns ––– nC ––– ––– 55 Conditions MOSFET symbol 2.5 VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A Notes: 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Rθ is measured at TJ of approximately 90°C. Devices are 100% tested to these parameters. www.irf.com IRF7805QPbF Typical Characteristics Fig 1. Normalized On-Resistance vs. Temperature Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage ISD , Reverse Drain Current (A) 10 TJ = 150 °C 1 TJ = 25 °C V GS = 0 V 0.1 0.4 0.5 0.6 0.7 0.8 0.9 VSD ,Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.1 0.001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) www.irf.com Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 3 IRF7805QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 6X e e1 A1 8X b 0.25 [.010] A MILLIMETERS MIN A E INCHES DIM B MAX .025 BASIC 0.635 B ASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking E XAMPL E : T HIS IS AN IR F 7101 (MOS F E T ) INT E R NAT IONAL R E CT IF IE R LOGO XXXX F 7101 DAT E CODE (YWW) P = DE S IGNAT E S LE AD-F R E E PRODUCT (OPT IONAL ) Y = L AS T DIGIT OF T HE YE AR WW = WE E K A = AS S E MB LY S IT E CODE L OT CODE PART NUMB E R Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 4 www.irf.com IRF7805QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010 www.irf.com 5