IRFNJ5305 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400) 3.05 (0.120) 0.127 (0.005) 0.127 (0.005) FEATURES 0.127 (0.005) 16 PLCS 0.50(0.020) -55V -22A Ω 0.065Ω 0.50 (0.020) max. 7.26 (0.286) • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS SMD05 (TO-276AA) PAD1 = SOURCE PAD 2 = DRAIN • LIGHTWEIGHT PAD3 = GATE • SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C -22A ID Continuous Drain Current @ Tcase = 100°C -16A IDM Pulsed Drain Current -88A PD Power Dissipation @ Tcase = 25°C 75W Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range RθJC Thermal Resistance Junction to Case 0.6W/°C –55 to 150°C 1.67°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Document Number 5607 Issue 1 IRFNJ5305 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Test Conditions VGS = 0 ID = -250µA Min. Typ. Max. -55 Reference to 25°C V -0.049 V / °C Breakdown Voltage ID = -1mA Static Drain – Source On–State VGS = -10V ID = -16A VDS = VGS ID = -250µA -2 Forward Transconductance VDS ≥ -25V IDS = -6A 8 Zero Gate Voltage Drain Current VDS = -55V (VGS = 0) VDS = -44V IGSS Forward Gate – Source Leakage VGS = -20V -100 IGSS Reverse Gate – Source Leakage VGS = 20V 100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1290 Coss Output Capacitance VDS = -25V 495 Crss Reverse Transfer Capacitance f = 1MHz 203 Qg Total Gate Charge VGS = -10V 70 Qgs Gate – Source Charge VDS = -44V 17 Qgd Gate – Drain (“Miller”) Charge ID = -16A 30 td(on) Turn–On Delay Time VDD = -28V 26 tr Rise Time ID = -16A 125 td(off) Turn–Off Delay Time RG = 6.8Ω 56 tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current -22* ISM Pulse Source Current -88 VSD Diode Forward Voltage trr Reverse Recovery Time IS = -16A Qrr Reverse Recovery Charge di / dt ≤ -100A/µs VDD ≤ -30V RDS(on) gfs IDSS 0.065 Resistance VGS(th) Gate Threshold Voltage Unit -4 -25 TJ = 125°C -250 Ω V (Ω) S(Ω µA nA pF nC ns 74 IS = -16A TJ = 25°C VGS = 0 TJ = 25°C A -1.3 V 100 ns 250 nC * Current Limited by package Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Document Number 5607Issue 1