SML1310IGF MECHANICAL DATA Dimensions in mm (inches) 4.50 4.81 10.40 10.80 3.0 0.75 0.95 3.50 Dia. 3.70 10.50 10.67 16.30 16.70 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDS ID(max) RDS(on) 1 2 3 1.0 dia. 3 places Á 20 Min. 2.1 max. À 100V 18A Ω .044Ω FEATURES 0.75 0.85 2.54 BSC • HERMETICALLY SEALED TO257 METAL PACKAGE 2.65 2.96 • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE TO257 Flexilead – Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 18A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 18A IDM Pulsed Drain Current 1 PD Power Dissipation @ Tcase = 25°C ±20V Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RθJC Thermal Resistance Junction to Case 72A 100W 0.8W/°C –55 to 150°C 300°C 1.25°C/W max. Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6027 Issue 1 SML1310IGF ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) STATIC ELECTRICAL RATINGS Parameter Test Conditions Min. Typ. Max. BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 250µA 100 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 2.0 IGSS Gate-Body Leakage Forward VGS ≤ 20V 100 IGSS Gate-Body Leakage Reverse VGS = -20V -100 4.0 Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V 250 TC = 125°C RDS(on) Static Drain – Source On–State Resistance1 VGS = 10V ID = 18A ID = 18A 0.44 Gfs DYNAMIC CHARACTERISTICS Forward Transductance 1 VDS = 25V Ciss Input Capacitance VGS = 0V 1872 Coss Output Capacitance VDS = 25V 463 Crss Reverse Transfer Capacitance F = 1MHz 234 td(on) Turn–On Delay Time tr Rise Time VDD = 50V ID = 18A 85 td(off) Turn–Off Delay Time RG = 3.6Ω VGS =10V 65 tf Fall Time IS nA 14 µA Ω S pF 19 ns 54 SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Modified MOSPOWER (Body Diode) V 25 VDS = 100V,VGS = 0V IDSS Unit , 18 smbol showing the integral P-N A / 72 ISM Source Current1 (Body Diode) VSD Diode Forward Voltage IS = 18A ,VGS = 0V, TC = 25°C 1.3 V trr Reverse Recovery Time TJ = 25°C 270 ns Qrr Reverse Recovery Charge di / dt = 100A/µs 1.8 µc Junction rectifier 5 IF =18A Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6027 Issue 1