SEME-LAB IRFNJ540

IRFNJ540
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
3.175 (0.125)
Max.
2.41 (0.095)
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
3.05 (0.120)
0.127 (0.005)
3
VDSS
ID(cont)
RDS(on)
10.16 (0.400)
5.72 (.225)
0.76
(0.030)
min.
1
2
100V
12A
Ω
0.052Ω
FEATURES
0.127 (0.005)
0.127 (0.005)
16 PLCS
0.50(0.020)
0.50 (0.020)
max.
• HERMETICALLY SEALED
7.26 (0.286)
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
SMD 05 (TO-276AA)
• SCREENING OPTIONS AVAILABLE
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
(also available as IRF9530SMD05 with Gate and Source reversed)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
BVDS
Drain – Source BreakdownVoltage
100V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current @ Tcase = 25°C
22A
ID
Continuous Drain Current @ Tcase = 100°C
16A
IDM
Pulsed Drain Current
88A
PD
Power Dissipation @ Tcase = 25°C
75W
Linear Derating Factor
0.6W/°C
TJ , Tstg
Operating and Storage Temperature Range
–55 to +150°C
RθJC
Thermal Resistance Junction to Case
1.67°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website http://www.semelab.co.uk
Document Number 5724
Issue 1
IRFNJ540
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
ΔBVDSS Temperature Coefficient of
ΔTJ
RDS(on)
Breakdown Voltage
Static Drain – Source On–State
Test Conditions
VGS = 0
Min.
ID = 250μA
Reference to 25°C
Typ.
Max.
100
V
0.11
ID = 1mA
Unit
V / °C
0.052
Ω
4
V
(Ω)
S(Ω
VGS = 10V
ID = 16A
VDS = VGS
ID = 250μA
2
Forward Transconductance*
VDS ≥ 50V
IDS = 16A
11
Zero Gate Voltage Drain Current
VDS = 100V
(VGS = 0)
VDS = 80V
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = -20V
-100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
1487
Coss
Output Capacitance
VDS = 25V
353
Crss
Reverse Transfer Capacitance
f = 1MHz
182
Qg
Total Gate Charge
VGS = 10V
104
Qgs
Gate – Source Charge
ID = 16A
20
Qgd
Gate – Drain (“Miller”) Charge
VDS = 0.8BVDSS
43
td(on)
Turn–On Delay Time
VDD = 50V
24
tr
Rise Time
ID = 16A
125
td(off)
Turn–Off Delay Time
RG = 7.5Ω
86
tf
Fall Time
VGS = 10V
82
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
22
ISM
Pulse Source Current
88
VSD
Diode Forward Voltage*
IS = 16A
VGS = 0V
1.3
V
trr
Reverse Recovery Time
IF = 16A
VDD ≤ 50V
240
ns
Qrr
Reverse Recovery Charge
di / dt ≤ 100A/μs
1.67
μC
Resistance*
VGS(th) Gate Threshold Voltage
gfs
IDSS
25
250
TJ = 150°C
μA
nA
pF
nC
ns
A
Notes
* Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website http://www.semelab.co.uk
Document Number 5724
Issue 1