IRFNJ540 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 2 100V 12A Ω 0.052Ω FEATURES 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. • HERMETICALLY SEALED 7.26 (0.286) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT SMD 05 (TO-276AA) • SCREENING OPTIONS AVAILABLE Pad 1 – Source Pad 2 – Drain Pad 3 – Gate (also available as IRF9530SMD05 with Gate and Source reversed) ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BVDS Drain – Source BreakdownVoltage 100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 22A ID Continuous Drain Current @ Tcase = 100°C 16A IDM Pulsed Drain Current 88A PD Power Dissipation @ Tcase = 25°C 75W Linear Derating Factor 0.6W/°C TJ , Tstg Operating and Storage Temperature Range –55 to +150°C RθJC Thermal Resistance Junction to Case 1.67°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Document Number 5724 Issue 1 IRFNJ540 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ΔBVDSS Temperature Coefficient of ΔTJ RDS(on) Breakdown Voltage Static Drain – Source On–State Test Conditions VGS = 0 Min. ID = 250μA Reference to 25°C Typ. Max. 100 V 0.11 ID = 1mA Unit V / °C 0.052 Ω 4 V (Ω) S(Ω VGS = 10V ID = 16A VDS = VGS ID = 250μA 2 Forward Transconductance* VDS ≥ 50V IDS = 16A 11 Zero Gate Voltage Drain Current VDS = 100V (VGS = 0) VDS = 80V IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = -20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1487 Coss Output Capacitance VDS = 25V 353 Crss Reverse Transfer Capacitance f = 1MHz 182 Qg Total Gate Charge VGS = 10V 104 Qgs Gate – Source Charge ID = 16A 20 Qgd Gate – Drain (“Miller”) Charge VDS = 0.8BVDSS 43 td(on) Turn–On Delay Time VDD = 50V 24 tr Rise Time ID = 16A 125 td(off) Turn–Off Delay Time RG = 7.5Ω 86 tf Fall Time VGS = 10V 82 IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 22 ISM Pulse Source Current 88 VSD Diode Forward Voltage* IS = 16A VGS = 0V 1.3 V trr Reverse Recovery Time IF = 16A VDD ≤ 50V 240 ns Qrr Reverse Recovery Charge di / dt ≤ 100A/μs 1.67 μC Resistance* VGS(th) Gate Threshold Voltage gfs IDSS 25 250 TJ = 150°C μA nA pF nC ns A Notes * Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Document Number 5724 Issue 1