2N6802 IRFF430 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE POWER MOSFET 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. BVDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 500V 2.5 Ω 1.5Ω 3 FEATURES 0.74 (0.029) 1.14 (0.045) • AVALANCHE ENERGY RATED 0.71 (0.028) 0.53 (0.021) • HERMETICALLY SEALED 45° • DYNAMIC dv/dt RATING TO39 – Package (TO-205AF) • SIMPLE DRIVE REQUIREMENTS Underside View Pin 1 – Source Pin 2 – Gate Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.5A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 1.5A ±20V 1 IDM Pulsed Drain Current PD Power Dissipation @ Tcase = 25°C Linear Derating Factor EAS 11A 25W 0.2W/°C Single Pulse Avalanche Energy 2 3 0.35mJ dv/dt Peak Diode Recovery TJ , Tstg Operating and Storage Temperature Range RθJC Thermal Resistance Junction to Case 5.0°C/W RθJA Thermal Resistance Junction-to-Ambient 175°C/W 3.5V/ns –55 to +150°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) @ VDD = 50V , Peak IL = 2.5A , Starting TJ = 25°C 3) @ ISD ≤ 2.5A , di/dt ≤ 75A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , SUGGESTED RG = 7.5Ω Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5357 Issue: 1 2N6802 IRFF430 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ VGS = 0 ID = 1mA Min. Typ. Max. 500 Reference to 25°C V 0.43 V / °C Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 1.5A 1.5 Resistance VGS = 10V ID = 2.5A 1.725 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 2 gfs Forward Transconductance VDS > 15V IDS = 1.5A 1.5 IDSS Zero Gate Voltage Drain Current VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 RDS(on) Unit 4 Ω V (Ω) S(Ω µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 610 Coss Output Capacitance VDS = 25V 135 Crss Reverse Transfer Capacitance f = 1MHz 65 Qg Total Gate Charge VGS = 10V 19.8 29.5 Qgs Gate – Source Charge VDS = 0.5BVDS 2.2 4.6 Qgd Gate – Drain (“Miller”) Charge ID = 2.5A 5.5 19.7 td(on) Turn–On Delay Time ID =2.5A 30 tr Rise Time VDS = 0.5BVDS 30 td(off) Turn–Off Delay Time RG = 7.5Ω 55 tf Fall Time pF nC ns 30 SOURCE – DRAIN DIODE CHARACTERISTICS IS 2.5 Continuous Source Current A ISM Pulse Source Current 2 IS = 2.5A VGS = 0 11 VSD Diode Forward Voltage IF = 1.5A TJ = 25°C 1.4 V trr Reverse Recovery Time IF = 2.5A TJ = 25°C 900 ns Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 50V 7.0 µC ton Forward Turn–On Time Notes Negligible 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Document Number 5357 Issue: 1