2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 -100V -4.0A Ω 0.60Ω FEATURES • HERMETICALLY SEALED TO–39 METAL PACKAGE 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT 45° • SCREENING OPTIONS AVAILABLE TO–39 (TO-205AF) METAL PACKAGE PIN1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) -4.0A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) -2.6A IDM Pulsed Drain Current 1 -16A PD Power Dissipation @ Tcase = 25°C 20 W ±20V Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RθJC Thermal Resistance Junction to Case 0.16 W/°C –55 to 150°C 300°C 6.25°C/W Notes 1) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5748 Issue 2 2N6845 IRFF9120 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 Min. Typ. Max. - 100 ID = - 1mA Reference to 25°C V - 0.10 V / °C Breakdown Voltage ID = - 1mA Static Drain – Source On–State VGS = - 10V ID = - 2.6A 0.60 VGS = - 10V ID = - 4.0A 0.69 VDS = VGS ID = -250µA VDS > -15V ID = -2.6A VDS = - 80V VGS = 0 -25 TJ = 125°C -250 Resistance 1 VGS(th) Gate Threshold Voltage 1 -2 -4 1.25 Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 380 Coss Output Capacitance VDS = - 25V 170 Crss Reverse Transfer Capacitance f = 1MHz 45 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time VDD = -50V 60 tr Rise Time ID = - 4.0A 100 td(off) Turn–Off Delay Time RG = 7.5Ω 50 tf Fall Time ID = -4.0A VDS = -50V Ω V S gfs VGS = -10V Unit µA nA pF 4.3 16.3 1.3 4.7 1.0 9.0 nC ns 70 SOURCE – DRAIN DIODE CHARACTERISTICS IS Continuous Source Current ISM Pulse Source Current VSD Diode Forward Voltage1 trr Reverse Recovery Time1 Charge1 Qrr Reverse Recovery ton Forward Turn–On Time D Mosfet symbol showing the - 4.0 G integral reverse p-n junction diode IS = - 4.0A - 16 S TJ = 25°C VGS = 0V IF = -4.0A TJ = 25°C di / dt ≤ -100A/µs VDD ≤ -50V A - 4.8 V 200 ns 3.1 µC Negligible Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5748 Issue 2