SEME-LAB IRFM3205

IRFM3205
MECHANICAL DATA
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
N–CHANNEL
POWER MOSFET
6.32 (0.249)
6.60 (0.260)
VDSS
ID(cont)
RDS(on)
1.02 (0.040)
1.27 (0.050)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
20.07 (0.790)
20.32 (0.800)
3.53 (0.139)
Dia.
3.78 (0.149)
1
2
55V
35A
Ω
0.015Ω
FEATURES
• N–CHANNEL MOSFET
3
• HERMETIC ISOLATED TO-254 PACKAGE
• CERAMIC SURFACE MOUNT PACKAGE
OPTION
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
3.81 (0.150)
BSC
TO–254AA – Isolated Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
ID
Continuous Drain Current*
@ VGS = 10V , TC = 25°C
@ VGS = 10V , TC = 100°C
IDM
Pulsed Drain Current
PD
Max. Power Dissipation
@ TC = 25°C
Linear Derating Factor
IL
Avalanche Current , Clamped 1
dv / dt
Peak Diode Recovery 2
RθJC
Thermal Resistance Junction – Case
TJ , TSTG
Operating Junction and Storage Temperature Range
TL
Lead Temperature (1.6mm from case for 10s)
1)
2)
±20V
35A
35A
140A
125W
1.0W / °C
35A
2.6V / ns
1.0°C / W
–55 to 150°C
300°C
Repetative Rating: Pulse width limited by Max. Junction Temperature.
ISD ≤ 35A , di/dt ≤ 230A / µS , VDD ≤ BVDSS , TJ ≤ 150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5606
Issue 1
IRFM3205
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
STATIC ELECTRICAL RATINGS
BVDSS
Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ
RDS(on)
VGS = 0
ID = 250µA
55
Reference to 25°C
0.056
ID = 1mA
Breakdown Voltage
Static Drain – Source On–State
Resistance 2
VGS(th) Gate Threshold Voltage
2
V
V / °C
0.015
Ω
4
V
(Ω)
S(Ω
VGS = 10V
ID = 35A
VDS = VGS
ID = 250µA
2
VDS ≥ 15V
IDS = 35A
34
VDS = 55V
VGS = 0
25
VDS = 44V
TJ = 125°C
250
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
–100
µA
nA
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
3600
Coss
Output Capacitance
VDS = 25V
1200
Crss
Reverse Transfer Capacitance
f = 1MHz
445
Qg
Total Gate Charge
VGS = 10V
170
Qgs
Gate – Source Charge
ID = 35A
32
Qgd
Gate – Drain (“Miller”) Charge
VDS = 44V
74
td(on)
Turn– On Delay Time
VDD = 28V
22
tr
Rise Time
ID = 35A
80
td(off)
Turn–Off Delay Time
RG = 2.5Ω
70
tf
Fall Time
VGS = 10V
55
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
35
Continuous Source Current (Body
1
A
ISM
Pulse Source Current
VSD
Diode Forward Voltage
IS = 35A
VGS = 0
1.3
V
trr
Reverse Recovery Time3
IF = 35A
TJ = 25°C
130
ns
Qrr
Reverse Recovery Charge3
di / dt ≤ 100A/µs VDD ≤ 25V
410
nC
ton
Forward Turn–On Time
140
Negligible
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5606
Issue 1