IRFM3205 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 1 2 55V 35A Ω 0.015Ω FEATURES • N–CHANNEL MOSFET 3 • HERMETIC ISOLATED TO-254 PACKAGE • CERAMIC SURFACE MOUNT PACKAGE OPTION 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC TO–254AA – Isolated Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current* @ VGS = 10V , TC = 25°C @ VGS = 10V , TC = 100°C IDM Pulsed Drain Current PD Max. Power Dissipation @ TC = 25°C Linear Derating Factor IL Avalanche Current , Clamped 1 dv / dt Peak Diode Recovery 2 RθJC Thermal Resistance Junction – Case TJ , TSTG Operating Junction and Storage Temperature Range TL Lead Temperature (1.6mm from case for 10s) 1) 2) ±20V 35A 35A 140A 125W 1.0W / °C 35A 2.6V / ns 1.0°C / W –55 to 150°C 300°C Repetative Rating: Pulse width limited by Max. Junction Temperature. ISD ≤ 35A , di/dt ≤ 230A / µS , VDD ≤ BVDSS , TJ ≤ 150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5606 Issue 1 IRFM3205 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 ID = 250µA 55 Reference to 25°C 0.056 ID = 1mA Breakdown Voltage Static Drain – Source On–State Resistance 2 VGS(th) Gate Threshold Voltage 2 V V / °C 0.015 Ω 4 V (Ω) S(Ω VGS = 10V ID = 35A VDS = VGS ID = 250µA 2 VDS ≥ 15V IDS = 35A 34 VDS = 55V VGS = 0 25 VDS = 44V TJ = 125°C 250 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 3600 Coss Output Capacitance VDS = 25V 1200 Crss Reverse Transfer Capacitance f = 1MHz 445 Qg Total Gate Charge VGS = 10V 170 Qgs Gate – Source Charge ID = 35A 32 Qgd Gate – Drain (“Miller”) Charge VDS = 44V 74 td(on) Turn– On Delay Time VDD = 28V 22 tr Rise Time ID = 35A 80 td(off) Turn–Off Delay Time RG = 2.5Ω 70 tf Fall Time VGS = 10V 55 pF nC ns SOURCE – DRAIN DIODE CHARACTERISTICS IS 35 Continuous Source Current (Body 1 A ISM Pulse Source Current VSD Diode Forward Voltage IS = 35A VGS = 0 1.3 V trr Reverse Recovery Time3 IF = 35A TJ = 25°C 130 ns Qrr Reverse Recovery Charge3 di / dt ≤ 100A/µs VDD ≤ 25V 410 nC ton Forward Turn–On Time 140 Negligible Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5606 Issue 1