SEMICONDUCTOR KTD1411 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE DARLINGTON TRANSISTOR. A B FEATURES D C E High DC Current Gain : hFE=3000(Min.) F (VCE=2V, IC=1A) G H MAXIMUM RATING (Ta=25 CHARACTERISTIC DIM A B C D E F G H J K L M N O P J ) K SYMBOL RATING UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 10 V Collector Current IC 4 A Base Current IB 0.5 A Collector Power Dissipation (Tc=25 ) PC 15 W Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC L M N O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE MILLIMETERS 8.3 MAX 5.8 0.7 _ 0.1 Φ3.2 + 3.5 _ 0.3 11.0 + 2.9 MAX 1.0 MAX 1.9 MAX _ 0.15 0.75 + _ 0.5 15.50 + _ 0.1 2.3 + _ 0.15 0.65 + 1.6 3.4 MAX TO-126 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 20 A Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 100 A V(BR)CEO IC=10mA, IB=0 60 - - V hFE(1) VCE=2V, IC=1A 3000 - - hFE(2) VCE=2V, IC=3A 1000 - - Collector-Emitter VCE(sat) IC=3A, IB=30mA - - 1.5 Base-Emitter VBE(sat) IC=3A, IB=30mA - - 2.0 Collector-Emitter Breakdown Voltage DC Current Gain Saturation Voltage 2003. 7. 24 Revision No : 2 V 1/2 KTD1411 VCE(sat) - I C DC CURRENT GAIN h FE 30k SATURATION VOLTAGE VCE(sat) (V) h FE - I C VCE =2V 10k 5k 3k 1k 500 0.1 0.3 0.5 1 3 5 10 2.0 COMMON EMITTER I C /I B =100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 COLLECTOR CURRENT I C (A) 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA I C - V BE 1 0.5 * SINGLE NONREPETITIVE PULSE Tc=25 C 0.3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 1 BASE EMITTER VOLTAGE VBE (V) VCEO MAX. COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2 S* 1.5 S* 1 1m 0.5 0 N 0 10m 1 O TI RA C PE 5 O =2 C Tc 2 I C MAX.(CONTINUOUS) 3 D 3 I C MAX.(PULSED)* 5 * VCE =3V µS 100 4 10 3 5 10 30 50 100 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR-EMITTER VOLTAGE V CE (V) P C - Ta 18 Tc=Ta INFINITE HEAT SINK 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 2 2/2