SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N ) RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V VEBO 10 V Collector Current IC 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 150 H F F L Emitter-Base Voltage J SYMBOL 1 2 C CHARACTERISTIC G D 3 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M MAXIMUM RATING (Ta=25 E K 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1.0mA, IC=0 10 - - V Collector Cut-off Current ICBO VCB=40V, IE=0 - - 1.0 A Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 1.0 A DC Current Gain hFE IC=100mA, VCE=2V 30k - - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=1mA - - 1.0 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=1mA - 1.5 2.0 V Current Gain Bandwidth Product fT IC=100mA, VCE=2V, f=100MHz - 220 - MHz VCB=10V, f=1MHz, IE=0 - 5.0 - pF Collector Output Capacitance 1999. 11. 30 Revision No : 1 Cob 1/2 BC517 h FE - I C 10 10 4 3 10 -1 10 0 10 1 10 2 10 10 10 3 1 0 0.2 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) 625 500 400 300 200 100 0 100 125 150 AMBIENT TEMPERATURE Ta ( C) 1999. 11. 30 10 10 10 10 75 0.6 0.8 1.0 1.2 I C - VBE 700 50 0.4 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) P C - Ta 25 55 C 0 COLLECTOR CURRENT I C (mA) 0 C 2 Ta=- Ta=25 C Ta=-55 C 10 C 5 Ta= 25 Ta=125 C 10 10 3 Ta =1 25 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE 10 I C - V CE(sat) 6 Revision No : 1 175 3 2 1 0 0.8 1.0 1.2 1.4 1.6 1.8 BASE-EMITTER VOLTAGE V BE (V) 2/2