ISC KTC3229

Inchange Semiconductor
Product Specification
KTC3229
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High voltage :VCEO=300V
APPLICATIONS
・For color TV chroma output application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
0.1
A
IB
Base current
20
mA
PC
Collector dissipation
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Ta=25℃
Inchange Semiconductor
Product Specification
KTC3229
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
ICBO
MAX
UNIT
IC=10mA; IB=1mA
1.0
V
Collector cut-off current
VCB=240V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE-1
DC current gain
IC=0.5mA ; VCE=10V
20
hFE-2
DC current gain
IC=20mA ; VCE=10V
30
Transition frequency
IC=20mA ; VCE=20V
75
Collector output capacitance
f=1MHz;VCB=20V
fT
COB
CONDITIONS
2
MIN
TYP.
200
MHz
4.0
pF
Inchange Semiconductor
Product Specification
KTC3229
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
KTC3229
Silicon NPN Power Transistors
4