Inchange Semiconductor Product Specification KTC3229 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High voltage :VCEO=300V APPLICATIONS ・For color TV chroma output application PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 0.1 A IB Base current 20 mA PC Collector dissipation 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Ta=25℃ Inchange Semiconductor Product Specification KTC3229 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage ICBO MAX UNIT IC=10mA; IB=1mA 1.0 V Collector cut-off current VCB=240V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=0.5mA ; VCE=10V 20 hFE-2 DC current gain IC=20mA ; VCE=10V 30 Transition frequency IC=20mA ; VCE=20V 75 Collector output capacitance f=1MHz;VCB=20V fT COB CONDITIONS 2 MIN TYP. 200 MHz 4.0 pF Inchange Semiconductor Product Specification KTC3229 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification KTC3229 Silicon NPN Power Transistors 4