ISC 2SA1280

Inchange Semiconductor
Product Specification
2SA1280
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·For use in low frequency power amplifier
Color TV vertical deflection output
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
-1.5
A
25
W
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA1280
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA;IB=-50mA
-3.0
V
VBE
Base-emitter on voltage
IC=-50mA ; VCE=-4V
-1.0
V
ICBO
Collector cut-off current
VCB=-120V;IE=0
-1
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-1
μA
hFE-1
DC current gain
IC=-50mA ; VCE=-4V
60
hFE-2
DC current gain
IC=-500mA ; VCE=-10V
60
fT
Transition frequency
IC=-500mA ; VCE=-10V
4
COB
Output capacitance
IE=0 ; VCB=-100V;f=1MHz
B
2
MIN
TYP.
MAX
-150
UNIT
V
200
MHz
30
pF
Inchange Semiconductor
Product Specification
2SA1280
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3