Inchange Semiconductor Product Specification 2SB1640 Silicon PNP Power Transistors DESCRIPTION ・With ITO-220 package ・Low collector saturation voltage ・Complement to type 2SD2525 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC D N O IC Open emitter M E S GE N A H INC Emitter-base voltage CONDITIONS Open base Open collector Collector current VALUE UNIT -60 V -60 V -7 V -3 A -0.5 A 1.8 W IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1640 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 -1.5 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.75 -1.0 V ICBO Collector cut-off current VCB=-60V ;IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V ;IC=0 -10 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 100 hFE-2 DC current gain IC=-2A ; VCE=-5V 15 fT COB CONDITIONS 导体 半 电 固 Transition frequency IC=-0.5A ; VCE=-5V Output capacitance IE=0; VCB=-10V;f=1MHz MIN TYP. -60 N A H INC 2 UNIT V 320 R O T UC D N O IC M E S GE MAX 9 MHz 50 pF Inchange Semiconductor Product Specification 2SB1640 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3