ISC 2SB1640

Inchange Semiconductor
Product Specification
2SB1640
Silicon PNP Power Transistors
DESCRIPTION
・With ITO-220 package
・Low collector saturation voltage
・Complement to type 2SD2525
APPLICATIONS
・Audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (ITO-220) and symbol
导体
半
电
R
O
T
UC
Absolute maximum ratings(Ta=25℃)
固
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
D
N
O
IC
Open emitter
M
E
S
GE
N
A
H
INC
Emitter-base voltage
CONDITIONS
Open base
Open collector
Collector current
VALUE
UNIT
-60
V
-60
V
-7
V
-3
A
-0.5
A
1.8
W
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1640
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
-1.5
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-0.75
-1.0
V
ICBO
Collector cut-off current
VCB=-60V ;IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V ;IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
100
hFE-2
DC current gain
IC=-2A ; VCE=-5V
15
fT
COB
CONDITIONS
导体
半
电
固
Transition frequency
IC=-0.5A ; VCE=-5V
Output capacitance
IE=0; VCB=-10V;f=1MHz
MIN
TYP.
-60
N
A
H
INC
2
UNIT
V
320
R
O
T
UC
D
N
O
IC
M
E
S
GE
MAX
9
MHz
50
pF
Inchange Semiconductor
Product Specification
2SB1640
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3