SEMICONDUCTOR TECHNICAL DATA KGT12N120NDH General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ・High speed switching ・High system efficiency ・Soft current turn-off waveforms ・Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V 24 A 12 A ICM* 36 A IF 15 A IFM 45 A 176 W 70 W Tj 150 ℃ Tstg -55 to + 150 ℃ @TC=25℃ Collector Current @TC=100℃ Pulsed Collector Current Diode Continuous Forward Current @TC=100℃ Diode Maximum Forward Current Maximum Power Dissipation @TC=25℃ @TC=100℃ Maximum Junction Temperature Storage Temperature Range IC PD *Repetitive rating : Pulse width limited by max. junction temperature E C G THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.92 ℃/W Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.8 ℃/W Thermal Resistance, Junction to Ambient Rt h JA 40 ℃/W 2011. 8. 30 Revision No : 0 1/7 KGT12N120NDH ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=1.0mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA VGE(th) VGE=VCE, IC=12mA 4.5 6.0 7.5 V VGE=15V, IC=12A - 2.0 2.5 V VGE=15V, IC=12A, TC = 125℃ - 2.35 - V VGE=15V, IC=24A - 2.6 - V - 70 100 nC - 9 - nC Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 40 - nC Turn-On Delay Time td(on) - 30 - ns tr - 18 - ns - 100 - ns - 135 - ns - 1.7 - mJ Rise Time Turn-Off Delay Time Fall Time VCC=600V, VGE=15V, IC= 12A td(off) tf VCC=600V, IC=12A, VGE=15V,RG=10Ω Inductive Load, TC = 25℃ (Note1) Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 0.5 - mJ Total Switching Loss Ets - 3.0 - mJ Turn-On Delay Time td(on) - 30 - ns tr - 20 - ns - 110 - ns - 250 - ns - 2.0 - mJ Rise Time Turn-Off Delay Time Fall Time td(off) tf VCC=600V, IC=12A, VGE=15V, RG=10Ω Inductive Load, TC = 125℃ (Note1) Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 1.0 - mJ Total Switching Loss Ets - 3.5 - mJ Input Capacitance Cies - 1100 - pF Ouput Capacitance Coes - 50 - pF Reverse Transfer Capacitance Cres - 30 - pF VCE=30V, VGE=0V, f=1MHz Note 1 : Energy loss include tail current and diode reverse recovery. Marking 2011. 8. 30 Revision No : 0 2/7 KGT12N120NDH ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25℃ - 1.9 2.5 TC=125℃ - 2.1 - TC=25℃ - 280 - TC=125℃ - 370 - IF = 12A TC=25℃ - 15 23 di/dt = -200A/μs TC=125℃ - 16 - TC=25℃ - 1900 3700 TC=125℃ - 2800 - IF = 12A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2011. 8. 30 TEST CONDITION Irr Qrr Revision No : 0 UNIT V ns A nC 3/7 KGT12N120NDH 2011. 8. 30 Revision No : 0 4/7 KGT12N120NDH 2011. 8. 30 Revision No : 0 5/7