TYPE SN7489 64-811 RANDOM-ACCESS READ/WRI1E MEMORY TTL MEMORIES BULLETIN NO. DL.S 7511386 , DECEMBER 1972-REVISED MAY 1975 • For Application as a "S cratch Pad" Memory with Nondestructive Read-Out • Fully Decoded Memory Words of Four Bits Each • Fast Access Time . . . 33 ns Tγpical • Diode-Clamped , Buffered Inputs ME • Open-Collector Outputs Provide Wire-AND Capability J OR N PACKAGE Organized as 16 ADA • Typical Power Dissipation . . . 375 mW • Compatible with Most TTL and DTL Circuits 16 Vcc 2 15 AD B WE 3 14 AD C DI1 4 13 AD D D01 5 12 DI4 DI2 6 11 D04 D02 7 10 DI 3 GND 8 9 DO言 description This 64.bit active-element memory is a monolithic , high-speed , transistor-transistor logic (TTL) array of 64 flip.flop memory cells organized in a matrix to provide 16 words of four bits each. Each of the 16 words is addressed in straight binarγwith full on.chip decoding. 回 The buffered memory inputs consist of four address lines, four data inputs , a write enable , and a memory enable for controll ing the entry and access of data. The memory has open.collector outputs which may be wire-AND connected to permit expansion up to 4704 words of N-bit length without additional output buffering. Access time is typically 33 nanoseconds; power dissipation is typically 375 milliwatts. cοNDITION OF OUTPUTS Complement of Data 1nputs Complement of Selected Word Complement of Data I nputs High write operation I nformation present at the data inputs is written into the memory bγaddressing the desired word and holding both the memory enable and write enable low. Since the internal output of the data input gate is common to the input of the sense amplifier , the sense output will assume the opposite state of the information at the data inputs when the write enable is low. read operation The complement of the information which has been written into the memory is nondestructively read out at the four sense outputs. This is accomplished by holding the memory enable low , the write enable high , and selecting the desired address. R川肌 盯 同 Nm叫 E TE 178 EINmSWU Tm-UEM TU Qun MDU EM AM NSH VAm 575 TYPE SN7489 64-81T RANDOM-ACCESS READ/WRITE MEMORY functional block diagram MEMORY~ ENABlE ADDRESS lNPUTS 回 151 、 (7) =_1 一-50 叫 一∞ 21> (9) ~ ..:.:.:.. 50 3 ( DATA OUTPUTS 门 ~oo41 schematics of inputs and outputs TYPICAL OF ALL OUTPUTS EQUIVALENT OF EACH INPUT Vcc O U T D· U INPUT~ Data Inputs: Req AII others: Req 、---- ~ ~ 6 4 kn kn NOM NOM T FADUEU Em N:Qun d 咱aT EEENU RW叽 臼 盯 T 川S阳山 N 刀引 THxo Am SI E 575 一- ~ Req 179 TYPE SN7489 64-81T RANDOM-ACCESS READ/WRITE MEMORY absolute maximum ratings over operating free-air temperature range (unless otherwise noted) 7V 5.5 V 5_5 V Supply voltage, Vcc (see Note 1) I nput voltage (see Note 1) High-Ievel output voltage , VOH (see Notes 1 and 2) 0 OOc to 70 C Operating free-air temperature range 0 0 -65 C to 150 C Storage temperature range NOTES: 1. Voltage values are with respect to network ground terminal. 2. This is the maximum voltage that should be applied to any 口 utput when it is in the off state. recommended operating conditions MIN Supply voltage , VCC . . . . . . . . . . . . . . . . . NOM 4.75 40 40 5 . Width of write-enable pul 钮， t w Setup time , data input with respect to wrìte enable , t su (see Figure 1) Hold time , data input with respect to write enable , th (see Figure 1) . Select input setup time with respect to write enable , t su Select input hold time after writing , th (see Figure 1) o Operating free-air temperature , T A o 5 MAX UNIT 5.25 V ns ns ns ns 5 ns oc 70 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) 回 PARAMETER VI H H igh-Ievel input voltage VI L Low-Ievel input voltage VI K 1nput clamp voltage TEST CONDITIONSt MIN TVP 丰 MAX 2 UNIT V 0.8 V 一 1.5 V Vcc = MIN , 11 = -12 mA Vcc = MIN , VIH=2V , VIL = 0.8 V. VOH = 5.5 V Vcc = MIN. VIH = 2 V , IIOL = 12 mA 0 .4 VIL = 0.8 V. IIOL=16mA 0 .4 5 IOH High-Ievel output current 20 VOL Low-Ievel output voltage 11 1nput current at maximum input voltage Vcc= MAX. VI = 5.5 V IIH H igh-Ievel input current Vcc= MAX. VI = 2 .4 V 40 IIL ICC Low-Ievel input current Vcc= MAX. VI = 0 .4 V -1.6 mA Supply current Vcc = MAX. See Note 3 105 mA Co Off-state output capacitance Vcc = 5 V. VO=2 .4 V , μA V 11 mA 75 pF 6.5 f= 1 MHz μA NOTE 3: ICC is measured with the memory enable grounded. all other inputs at 4.5 V , and all outputs open. tFor conditions shown as MIN or MAX. use the appropriate value specified under recommended operating c口 nditions. 丰 AII typical values are at V CC = 5 V. T A = 25 C. 0 switching characteristics , 0 V CC = 5 V , T A = 25 C PARAMETER TEST CONDITIONS Propagation delay time. low-to-high-Ievel tpLH output from memory enable output from memory enable tpHL RL2 = 600 .11, Propagation delay time , high-to-Iow-Ievel See Figure 1 output from any address input after writing |l Oo utput initially high utput initially low S aEτ TM RtDa NU UEU r」川 沱 T 川- RW肌 EEEN 缸 币 IB S附旧 Nω川 THXD Am SI E 180 R L1二 300 .11， output from any address input Sense recovery time tSR MAX UNIT 26 50 33 50 30 60 35 60 39 70 48 70 CL=30pF. Propagation delay time , low-to-high-Ievel tpLH TVP ns Propagation delay time , high-to-Iow-Ievel tpHL MIN ns ns 575 TYPE SN7489 64-81T RANDOM-ACCESS READ/WRITE MEMORY PARAMETER MEASUREMENT INFORMATION OV From output under test RL2 = 600 n 3V LOAD CIRCUIT 3V DATA INPUT 3V MEMORY ENABLE WRITE ENABLE 二|一一一一一-一 OV !• 3V •! tSR 「--\!r- ANY HIGH OUTPUT .\.....-f i←丁SR VOH 1. 5 V --...:r VOL 圄 ;出「 ANY OUTPUT Write enable is high. READ CYCLE NOTES: WRITE CYCLE FROM WRITE ENABLE A. The input pulse generators have the following characteristics: t r ';;; 10 ns , tf .;;; 10 ns , PR R B. CL includes probe and jig capacitance. = 1 MHz , Zout 坦 50 n. FIGURE 1-SWITCHING CHARACTERISTICS mvπ TYPICAL CHARACTERISTICS FE 」 40 4 VCC 2 E」口川 vs INPUT VOLTAGE E』 nrE AA FE nr nnFr yT OR GA hm ME AE f lJSM TR nup- INPUT CURRENT ~ TA =5 = 25 0 V C 35 c-lz 〈E-HCUK=υH且 2 o 卡一 • J 30 '" c 一2 • -4 •c: 25 ε o 20 ....m 口、 i1 一6 。 15 口. 一8 10 一 10 5 -12 o 2 VI 一 Input 3 4 5 10 20 30 FIGURE 2 RW肌 60 70 S Tm- UEM MDU EW Ni T 山 臼 N 缸 EE 且 tB 盯 TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE (HANGES AT ANY Tl ME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE Am xo SZ TEm E PRINTED IN U.5 A TI (onnol Ollume ony relponlibilily for ony circuils Ihown or reprelenl Ihol Ihey ore free from polenl infringement 50 FIGURE 3 sm川 N 刀引 ,75 40 T A-Free.Air Temperature一。 c Voltage-V 181