MMBFJ270 P-CHANNEL SWITCH FEATURES • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008gram • Marking : 270 3 G D S 1 2 ABSOLUTE MAXIMUM RATINGS TJ=25oC PARAMETER SYMBOL VALUE UNITS Drain-Gate Voltage VDG -30 V Gate-Source Voltage VGS 30 V Forward Gate Current I GF 50 mA TJ,TSTG -55 to +150 SYMBOL VALUE UNITS PD 225 1.8 mW mW/oC RJA 556 Operating and Storage Junction Temperature Range o C THERMAL CHARACTERISTICS PARAMETER Total Device Dissipaton Derate above 25oC Thermal Resistance, Junciton to Ambient (Note 1) o C/W Note 1 : Device mounted on FR-4 PCB, 70 x 60 x 1mm. PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.3-SEP.18.2009 PAGE . 1 MMBFJ270 ELECTRICAL CHARACTERISTICS TJ=25oC PARAMETER SYMBOL TEST CONDITION MIN. MAX. UNITS Off Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage V(BR)GSS I G=1.0A,VDS=0 30 - V I GSS VGS=20V,V DS=0 - 200 pA VDS= -15V,I D= -1.0nA 0.5 2.0 V VDS= -15V,VGS=0 -2.0 -15 mA VGS=0V,VDS=15V,f=1.0kHz 6000 15000 mhos V GS(OFF) On Characteristics Zero-Gate Voltage Drain Current Forward Transferconductance REV.0.3-SEP.18.2009 I DSS gfs PAGE . 2 MMBFJ270 Common Drain-Source Transfer Characteristics -10 -32 -8 0.25V V GS =0V -6 0.50V 0.75V -4 1V -2 0 3V 2V 1.25V Id- DRAIN CURRENT (mA) I D -DRAI N CURR ENT (mA) o T A =25 C TYP V GS (off)=3V -24 V GS ( OFF )=-2.5V o -55 C o 25 C 125 oC -16 -8 0 0 -1 -2 -4 -3 0 V DS -DRAIN-SOURCE VOLTAGE(V) Power Derating 50 0 75 100 125 150 175 - TRANSCONDUCTANCE (mmhos) 100 fs 150 50 1 20 g fs 10 100 5 50 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 A 1 V GS (OFF) g os - OUTPUT CONDUCTANCE ( mhos) DS - NORMALIZED RESISTANCE ( Ω ) 100 500 I DSS r DS o Normalized Drain Resistance vs Bias Voltage 1,000 50 Tc[ C], CASE TEMPERATURE 50 4 3 Parameter Interactions 100 g PC[W], POWER DISSIPATION 200 25 2 10 2 5 10 - GATE CUTOFF VOLTAGE (V) r DS - DRAIN "ON" RESISTANCE (Ω) 250 0 1 V GS -GATE-SOURCE VOLTAGE (V) 300 r V DS =-15V V GS ( OFF )=-4.5V o -55 C o 25 C o 125 C Output Conductance vs Drain Current 1000 V GS(off) @ 5.0V, 10 A r DS r DS = 10 V GS 1 -________ V GS(off) 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) REV.0.3-SEP.18.2009 f = 1.0 kHz -5.0V 100 -5.0V -10V V GS(off) = - 4.5V -20V -20V -10V 10 V GS(off) = - 2.5V _ 1 0.01 _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 PAGE . 3 Capacitance vs Voltage Transconductance vs Drain Current 100 C is (C rs ) - CAPACITANCE (pF) g fs - TRANSCONDUCTANCE (mmhos) MMBFJ270 10 V GS(off) = 2.5V 5 25°C V GS(off) = 6.0V - 55°C 25°C 125°C 1 0.5 V DG = -15V f = 1.0 kHz 0.1 _ 0.1 _ 1 10 - DRAIN CURRENT (mA) _ ID _ f = 0.1 - 1.0 MHz 5 1 100 50 I D = - 0.2 mA 10 I D = 5.0 mA 5 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz 1 0.01 REV.0.3-SEP.18.2009 0.1 1 10 f - FREQUENCY (kHz) 100 r DS - DRAIN "ON" RESISTANCE (Ω) e n - NOISE VOLTAGE (nV / √ Hz) Noise Voltage vs Frequency 100 C is (V DS = -15V) 10 C rs (V DS = -15V) 0 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 20 Channel Resistance vs Temperature 1000 500 V DS = -100 mV V GS(off) = 2.5V V GS = 0 V GS(off) = 4.5V V GS(off) = 8.0V 100 50 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) PAGE . 4 MMBFJ270 MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.3-SEP.18.2009 PAGE . 5