PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS(ON),VGS@10V,I DS@30A=4mΩ • RDS(ON),[email protected],I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers D • Fully Characterized Avalanche Voltage and Current • In compliance with EU RoHS 2002/95/EC directives G S MECHANICALDATA • Case : TO-252 Molded Plastic D • Terminals : Solderable per MIL-STD-750,Method 2026 • Marking : 04N03D G S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol Limits Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS +20 V ID 80 A Pulsed Drain Current (1) I DM 220 A Avalanche Energy L=0.1mH,I D=53A,VDD=25V E AS 140 mJ Continous Drain Current Power Dissipation TC=25oC TC=25oC TC=75oC Operating Junction and Stroage Temperature Range Junction-to-Case PD 100 W 66 TJ,TSTG -55 to +175 RΘJC 1.5 o o Junction-to-Ambient RΘJA C C/W 50 NOTE : Pulse width limited by maximum junction temperature PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 10,2009-REV.00 PAGE . 1 PJ04N03D ELECTRICAL CHARACTERISTICS (TA=25oC,Unless Otherwise Noted) PA RA ME TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MA X . U N IT 25 - - V 1 - 3 V - 3 .6 4 .0 mΩ - 4 .8 6 .0 mΩ V D S= 0 V, V GS = + 2 0 V - - +100 nA V D S = 2 0 V , V GS = 0 V - - 1 µA V D S= 2 0 V, V GS = 0 V, TJ= 1 2 5 oC - - 25 µA V D S= 1 0 V, V GS = 1 0 V 65 - - A 15 - - S - 2 6 .4 - nC - 5 8 .2 - nC - 5 .4 - nC S TA T IC D ra i n-S o urc e B re a k d o wn Vo lta g e V (B R)D S S V GS= 0 V, I Ga te Thre s ho ld Vo lta g e V GS (TH) V D S = V GS, I D r a i n - S o u r c e O n- s t a t e Re s i s t a nc e R D S (ON) D=2 50µA D=250µA V GS = 1 0 V, I V GS= 5 V, I Ga te -B o dy L e ak a ge I GS S Ze r o Ga te Vo lta g e D ra i n C urre nt I DSS O n - S t a t e D r a i n C ur r e nt I F o r w a r d Tr a ns c o n d uc t a nc e D (ON) V DS= 5 V,I g fs D=3 0A D=2 4 A D=2 4 A D YN A M IC V DS =1 5 V ,V GS =5 V,I To t a l G a t e C h a r g e D=3 0A QG V D S = 1 5 V , V GS = 1 0 V I D=30A G a t e - S o ur c e C h a r g e Q GS Ga te -D ra i n C ha rg e QGD - 11 . 6 - nC Tur n- O n D e l a y Ti m e t d (o n) - 1 7 .6 22 nS - 11 . 8 18 nS - 4 8 .6 72 nS - 1 9 .2 26 nS - 2950 - pF - 520 - pF - 430 - pF - 1 .2 - Ω - - 80 A - - 1.3 V R i s e Ti m e tr Tur n- O f f D e l a y Ti m e td(off) F a l l Ti m e V D S= 1 5 V , I D = 1 A , V GS = 1 0 V R GS= 3 . 6 Ω tf In p ut C a p a c i t a nc e C IS S O u t p ut C a p a c i t a nc e C OSS R e ve r s e Tr a ns f e r C a p a c i t a n c e C RSS Ga te Re s i s t a nc e Rg V GS= 0 V, V D S = 1 5 V f=1 MHz V GS = 1 5 m V , V D S = 0 V , f = 1 M H z S o urc e -D ra i n D i o d e C o nt i n uo u s C ur r e n t I F o rwa rd Vo lta g e S V SD I F = 3 0 A , V GS = 0 V NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. V DD Switching Test Circuit V IN V DD Gate Charge Test Circuit RL V GS RL V OUT RG 1mA RG December 10,2009-REV.00 PAGE . 2 PJ04N03D Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 80 4.0V 80 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 100 VGS= 4.5V, 5.0V, 6.0V, 10.0V 60 3.5V 40 3.0V 20 2.5V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VDS =10V 60 40 TJ = 125oC 20 25oC 0 1 5 RDS(ON) - On-Resistance (mΩ Ω) RDS(ON) - On-Resistance (mΩ Ω) 12 10 8 VGS = 5.0V 4 VGS = 10V 2 0 0 10 20 30 40 50 60 70 ID - Drain Current (A) 80 ID =30A 16 12 8 125oC 4 TJ =25oC 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Fig.4 On Resistance vs Gate to Source Voltage 1.8 4000 VGS =10 V ID =30A 1.4 1.2 1 0.8 C - Capacitance (pF) RDS(ON) - On-Resistance (Normalized) 4.5 20 90 Fig.3 On Resistance vs Drain Current 1.6 1.5 2 2.5 3 3.5 4 VGS - Gate-to-Source Voltage (V) Fig.2 Transfer Characteristric Fig.1 Output Characteristric 6 - 55oC Ciss 3000 2500 2000 1500 Coss 1000 500 0.6 f = 1MHz VGS = 0V 3500 Crss 0 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature December 10,2009-REV.00 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 25 Fig.6 Capacitance PAGE. 3 PJ04N03D 100 10 VDS =15 V ID =30A 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) Typical Characteristics Curves ( Ta=25℃ ℃, unless otherwise noted) 6 4 2 0 10 TJ = 125oC 25oC 1 -55oC 0.1 0 10 20 30 40 Qg - Gate Charge (nC) 50 60 0 ID = 250µA 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature December 10,2009-REV.00 0.4 0.6 0.8 1 1.2 1.4 Fig.8 Source-Drain Diode Forward Voltage Vth - G-S Threshold Voltage (Normalized) 1.3 0.2 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform BVDSS - Breakdown Voltage(Normalized) VGS = 0V 1.2 ID =250µA 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) Fig.10 Threshold Voltage vs Junction Temperature PAGE. 4 PJ04N03D MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 3K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. December 10,2009-REV.00 PAGE . 5