PD - 97651C IRFH8324PbF VDS Vgs max RDS(on) max 30 V ± 20 V 4.1 (@VGS = 10V) (@VGS = 4.5V) 6.3 Qg typ. 14 ID 50 (@Tc(Bottom) = 25°C) HEXFET® Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 2.3°C/W) Low Profile (<1.2mm) Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number Package Type IRFH8324TRPBF IRFH8324TR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 18 90 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 57 ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 23 hi hi 50i A 200 3.6 g Units 54 0.029 -55 to + 150 W W/°C °C Notes through are on page 9 www.irf.com 1 03/30/12 IRFH8324PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.019 3.3 ––– 4.1 VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 1.35 ––– 5.0 1.8 -6.2 6.3 2.35 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 gfs Qg Forward Transconductance Total Gate Charge Total Gate Charge 72 ––– ––– ––– 31 14 ––– ––– ––– Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 4.4 2.2 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– ––– 3.5 3.9 5.7 ––– ––– ––– Output Charge ––– 13 ––– nC Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 1.1 13 26 ––– ––– ––– Ω Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 14 8.5 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss 2380 500 205 Max. Units ––– ––– Conditions VGS = 0V, ID = 250μA V V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 16A V VDS = VGS, ID = 50μA mV/°C e e VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C μA nA VGS = 20V VGS = -20V S nC VDS = 10V, ID = 20A VGS = 10V, VDS = 15V, ID = 20A VDS = 15V VGS = 4.5V nC ID = 20A VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 20A ns RG=1.8Ω VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c Max. 94 20 Typ. ––– ––– d Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr Min. ––– ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time ––– ––– Reverse Recovery Charge Forward Turn-On Time ton Typ. ––– ––– ––– 16 Max. Units 50 i D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 360 A/μs 200 1.0 24 Conditions MOSFET symbol ––– 25 38 nC Time is dominated by parasitic Inductance G S e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f Junction-to-Case f Junction-to-Case g Junction-to-Ambient g Junction-to-Ambient Parameter Typ. ––– ––– ––– ––– Max. Units 2.3 32 °C/W 35 23 www.irf.com IRFH8324PbF 1000 1000 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 10 2.5V 1 BOTTOM 10 2.5V ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 1 0.1 1 10 100 1000 0.1 V DS, Drain-to-Source Voltage (V) 10 100 1000 Fig 2. Typical Output Characteristics 1000 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 150°C 100 10 T J = 25°C VDS = 15V ≤60μs PULSE WIDTH 1.0 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 7 8 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C oss = C ds + C gd Ciss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V Coss Crss 100 12.0 VDS= 24V VDS= 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 5 10 15 20 25 30 35 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFH8324PbF 10000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 Limited by Source Bonding Technology 10msec 10 i 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 DC 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 90 2.6 i VGS(th) , Gate threshold Voltage (V) Limited By Source Bonding Technology 80 70 ID, Drain Current (A) 100μsec 1msec 100 60 50 40 30 20 10 2.4 2.2 2.0 1.8 1.6 ID = 50μA 1.4 ID = 1.0mA ID = 250μA ID = 1.0A 1.2 1.0 0.8 0 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 12 400 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH8324PbF ID = 20A 11 10 9 8 7 6 T J = 125°C 5 4 3 T J = 25°C 2 ID 4.9A 9.4A BOTTOM 20A 350 TOP 300 250 200 150 100 50 0 0 5 10 15 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit www.irf.com I AS 0.01Ω tp 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms 5 IRFH8324PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform www.irf.com IRFH8324PbF PQFN 5x6 Outline "E" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "E" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFH8324PbF PQFN 5x6 Outline "E" Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. REEL DIMENSIONS TR2 OPTION (QTY 400) STANDARD OPTION (QTY 4000) TR1 METRIC METRIC IMPERIAL IMPERIAL MIN MIN MAX CODE MIN MIN MAX MAX MAX A 6.988 12.972 7.028 329.5 330.5 178.5 13.011 177.5 B 0.823 0.823 0.846 20.9 20.9 0.846 21.5 21.5 C 0.520 0.504 0.543 12.8 13.8 13.5 13.2 0.532 D 0.075 0.067 0.091 0.091 1.7 2.3 2.3 1.9 E 2.350 3.819 2.598 97 66 99 65 3.898 F Ref 12 17.4 Ref 0.512 G 0.512 0.571 13 13 0.571 14.5 14.5 8 www.irf.com IRFH8324PbF Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer†† (per JE DE C JE S D47F PQFN 5mm x 6mm ††† guidelines ) MS L1 (per JE DE C J-S TD-020D††† ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.47mH, RG = 50Ω, IAS = 20A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 50A by source bonding technology. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/2012 www.irf.com 9