PD - 97493A IRFH6200PbF HEXFET® Power MOSFET VDS 20 V RDS(on) max 1.20 mΩ 1.50 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus Features and Benefits Features Low RDSon (≤ 1.20mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRFH6200TRPBF IRFH6200TR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm results in ⇒ Resulting Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 20 VGS ±12 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 36 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V 100 ID @ TC(Bottom) = 100°C 100 IDM Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 45 A 400 3.6 g Units 250 0.029 -55 to + 150 W W/°C °C Notes through are on page 8 www.irf.com 1 09/7/2010 IRFH6200PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. BVDSS ∆ΒVDSS/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Parameter 20 ––– ––– 6.4 ––– ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.80 1.10 1.20 1.50 VGS(th) ∆VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 0.5 ––– 0.8 -6.6 1.1 ––– IDSS Drain-to-Source Leakage Current ––– ––– 1.0 Gate-to-Source Forward Leakage ––– ––– ––– ––– 150 100 Gate-to-Source Reverse Leakage Forward Transconductance ––– 260 ––– ––– -100 ––– Total Gate Charge Gate-to-Source Charge ––– ––– 155 22 230 ––– Gate-to-Drain Charge ––– 53 ––– Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 1.3 14 74 ––– ––– ––– Turn-Off Delay Time ––– 140 ––– Fall Time Input Capacitance ––– ––– 160 10890 ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– 2890 2180 ––– ––– IGSS gfs Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Max. Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 4.5V, ID = 50A VGS = 2.5V, ID = 50A e e V VDS = VGS, ID = 150µA mV/°C µA nA S nC VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V VDS = 10V, ID = 50A VDS = 10V VGS = 4.5V ID = 50A (See Fig.17 & 18) Ω ns VDD = 10V, VGS = 4.5V ID = 50A RG=1.0Ω See Fig.15 VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current c d Typ. ––– Max. 780 Units mJ ––– 30 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton Min. ––– Typ. ––– Max. Units 100 A ––– c ––– Conditions MOSFET symbol 400 showing the integral reverse D G (Body Diode) Diode Forward Voltage ––– ––– 1.2 V p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge ––– ––– 86 350 130 525 ns nC TJ = 25°C, IF = 50A, VDD = 10V di/dt = 260A/µs Forward Turn-On Time S e e Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient f f g g Typ. ––– ––– ––– ––– Max. 0.5 15 35 22 Units °C/W www.irf.com IRFH6200PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V BOTTOM 100 10 1.3V 1.3V ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 10 1 0.1 1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 100 T J = 175°C T J = 25°C 10 VDS = 10V ≤60µs PULSE WIDTH 1.0 ID = 50A VGS = 4.5V 1.4 1.2 1.0 0.8 0.6 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd C, Capacitance (pF) VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V Ciss 10000 Coss Crss 12.0 VDS= 16V VDS= 10V 10.0 8.0 6.0 4.0 2.0 0.0 1000 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 100 200 300 400 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFH6200PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C 100 T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1msec 10msec 10 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 DC 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1.6 VGS(th) , Gate threshold Voltage (V) 400 ID, Drain Current (A) 100µsec 100 Limited By Package 300 200 100 0 25 50 75 100 125 150 1.4 1.2 1.0 0.8 ID = 150µA 0.6 ID = 500µA 0.4 ID = 1.0mA ID = 1.0A 0.2 0.0 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 4 3500 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH6200PbF ID = 50A ID TOP 19A 21A BOTTOM 30A 3000 3 2500 2000 2 1500 T J = 125°C 1000 1 T J = 25°C 0 500 0 0 2 4 6 8 10 12 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit www.irf.com I AS 0.01Ω tp 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms 5 IRFH6200PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform www.irf.com IRFH6200PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFH6200PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Indus trial (per JE DE C JE S D47F PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.7mH, RG = 25Ω, IAS = 30A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010 8 www.irf.com