MBRAF260T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection These are Pb−Free and Halide−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2.0 AMPERE 60 VOLTS Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal SMA−FL CASE 403AA STYLE 6 Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • MARKING DIAGRAM 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B AYWW RAGG G RAG = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRAF260T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 0 1 Publication Order Number: MBRAF260/D MBRAF260T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 120°C) Symbol Value Unit VRRM VRWM VR 60 V IO 2.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 90°C IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +150 °C Voltage Rate of Change (Rated VR, TJ = 25°C) 4.0 60 dv/dt 10,000 A A V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit RqJL RqJA 25 90 °C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol vF Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A) (iF = 2.0 A) Maximum Instantaneous Reverse Current (Note 2) IR (VR = 60 V) 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Value Unit TJ = 25°C TJ = 125°C 0.51 0.63 0.475 0.55 TJ = 25°C TJ = 125°C 0.2 20 V mA MBRAF260T3G 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 75°C 125°C 25°C 1 0.1 0.1 0.2 0.4 0.3 0.5 0.6 0.7 25°C 1 0.1 0.8 75°C 125°C 0.1 0.2 0.3 0.4 0.5 0.6 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 IR, REVERSE CURRENT (AMPS) 125°C 25°C f = 1 MHz C, CAPACITANCE (pF) 1.0E−03 75°C 1.0E−04 1.0E−05 25°C 1.0E−06 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 1.0E−07 10 1 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1.0E−02 100 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 10 20 30 40 50 60 10 0 10 20 30 50 40 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance 60 50% Duty Cycle 10% 20% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 5. Typical Transient Thermal Response, Junction−to−Ambient http://onsemi.com 3 100 1000 MBRAF260T3G PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 1.76 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 5.56 b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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