TRIQUINT TGA4030-SM

TGA4030-SM
17 – 37 GHz MPA/Multiplier
Key Features
•
•
•
•
•
•
RF Output Frequency Range: 17 - 37 GHz
20 dB Nominal Gain
22 dBm Nominal Output Maximum Power
2x and 3x Multiplier Function
Bias: Vd = 5V, Id = 140mA
Package Dimensions: 3.0 x 3.0 x 1.1 mm
Primary Applications
•
•
•
•
Measured Performance
25
15
20
10
S21 (dB)
15
5
S21
S11
S22
10
0
5
-5
0
-10
-5
-15
-10
-20
-15
-25
17
21
25
29
33
37
Frequency (GHz)
Bias at Vd = 5V, Id = 140mA and Vg = -0.75V (Typical)
Product Description
The TriQuint TGA4030-SM is a Medium Power
Amplifier and Multiplier for wide band 17 – 37
GHz applications. The part is designed using
TriQuint’s 0.15um power pHEMT process.
The TGA4030-SM provides a nominal 20 dB
small signal gain with 22 dBm maximum output
power. For 2x and 3x Multiplier Function,
TGA4030-SM provides 15 dBm typical output
power @ 9 dBm Pin.
This part is ideally suited for applications such as
Radio, EW, instrumentation and
frequency multipliers.
Psat
Point-to-Point
24
22
Psat (dBm)
S11 & S22 (dB)
Bias at Vd = 5V, Id = 140mA and Vg = -0.75V (Typical)
Point-to-Point Radio
EW
Instrumentation
Frequency Multiplier
20
Evaluation boards are available upon request.
18
Lead-free and RoHS compliant
16
14
12
10
17
19
21
23
25
27
29
31
33
35
37
39
Frequency (GHz)
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Table I
Absolute Maximum Ratings 1/
Symbol
1/
Parameter
Value
Vd-Vg
Drain to Gate Voltage range
8V
Vd
Drain Supply Voltage Range
6V
Vg
Gate Supply Voltage Range
-3 – 0 V
Id
Drain Current
400 mA
|Ig|
Gate Current
1.38 mA
Pin
Input Continuous Wave Power
20 dBm
Notes
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
Table II
Recommended Operating Conditions
Symbol
Parameter
Value
Vd
Drain Voltage
5V
Id
Drain Current
140 mA
Vg
Gate Voltage (Typical)
-0.75 V
Vd1
Drain Voltage
1V
Vg1
Gate Voltage
-1.1 V
See bias plan on page 14 for amplifier and 2x multiplier, page 15 for 3x multiplier
2
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Table III
RF Characterization Table
Bias: Vd=5V, Id= 140mA, Vg = -0.75V (typical), TA= 25 C
PARAMETER
AMPLIFIER
2X MULTIPLIER
3x MULTIPLIER
UNITS
RF Output Frequencies
17 - 37
22 - 38
23 - 31
GHz
S21, Small Signal Gain
20
-
-
dB
S11, Input Return Loss
10
-
-
dB
S22, Output Return Loss
5
5
5
dB
Psat, Maximum Output
Power
22
dBm
P1dB, Output Power @ 1
dB Gain Compression
18
dBm
IMD3@ 11 dBm Pout/Tone
30
dBc
Output Power @ Pin = 9
dBm
-
15
15
dBm
Conversion Gain
-
9
5
dB
Gain Temperature
coefficient
-0.04
dB/oC
3
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Table IV
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 70 ºC
Pd = 1.2 W
Tchannel = 150 ºC
Tm = 1.0E+6 Hrs
Thermal Resistance, θjc
Vd = 5V
Id = 140mA
Pd = 0.7W
θjc = 66.7 (ºC/W)
Tchannel = 116 ºC
Tm = 2.4E+7 Hrs
30 seconds
260 ºC Max
Mounting Temperature
Storage Temperature
1/
Notes
1/ 2/
-65 to 150 ºC
For a median life, Tm, of 1E+6 hours, power dissipation is limited to
Pd(max) = (Tchannel ºC – Tbase ºC)/θjc.
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
1.4
Power Dissipated (W)
2/
1.2
1
0.8
Series1
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
Baseplate Temp (C)
4
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Measured Data
15
20
10
15
5
10
0
5
-5
0
-10
-5
-15
-10
-20
-15
-25
S21 (dB)
25
10
15
20
25
30
35
40
S11 & S22 (dB)
Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical)
45
Frequency (GHz)
This is device s-parameter
28
S21 (dB)
24
20
16
12
25 C
8
-40 C
4
70 C
0
10
15
20
25
30
35
40
45
Frequency (GHz)
This is evaluation board s-parameter
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Measured Data
Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical)
P1
24
P1dB (dBm)
22
20
18
16
14
12
10
17
19
21
23
25
27
29
31
33
35
37
Frequency (GHz)
P
24
Psat (dBm)
22
20
18
16
14
12
10
17
19
21
23
25
27
29
31
33
35
37
39
Frequency (GHz)
6
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Measured Data
Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical)
0.35
17GHz
21GHz
25GHz
29GHz
33GHz
37GHz
Id (A)
0.3
0.25
0.2
0.15
0.1
-16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
10
Noise Figure (dB)
Pin (dBm)
18
16
14
12
10
Serie
8
6
4
2
0
17
19
21
23
25
27
29
31
33
35
37
39
41
Frequency (GHz)
7
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Measured Data
Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical)
60
IMD3 (dBc)
50
40
30
17 GHz
19 GHz
21 GHz
23 GHz
25 GHz
20
10
0
-6
-3
0
3
6
9
12
15
18
15
18
21
IMD3 (dBc)
Pout/tone (dBm)
50
45
40
35
30
25
20
15
10
5
0
27 GHz
29 GHz
31 GHz
33 GHz
35 GHz
37 GHz
39 GHz
-3
0
3
6
9
12
Pout/tone (dBm)
8
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Measured Data
Bias Conditions: Vd = 5V, Idq = 140 mA, Vg = -0.75 V (Typical)
30
28
26
TOI (dBm)
24
22
20
Serie
18
16
14
12
10
17
19
21
23
25
27
29
31
33
35
37
Frequency (GHz)
9
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Measured 2X Multiplier Data
Pout (dBm)
Bias Conditions: Vd = 5 V, Idq = 120 mA, Vg1 = -1.1 V, Pin = 9 dBm
Pin @ 9
22
20
18
16
14
12
10
8
6
4
2
0
16 18 20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
Conversion Gain (dB)
Pin
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
16 18 20 22 24 26 28 30 32 34 36 38 40 42
Frequency (GHz)
10
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Measured 3X Multiplier Data
Bias Conditions: Vd = 5 V, Vd1 = 1 V, Idq = 160 mA, Pin = 9 dBm
Pin @ 9 dB
20
18
Pout (dBm)
16
14
12
10
8
6
4
2
0
18
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
Pin @ 9 d
Conversion Gain (dB)
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
18
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Mechanical Drawing
Pin 16
Pin 15
Pin 14
Pin 13
Pin 12
Pin 1
Pin 11
Pin 2
GND
Pin 10
Pin 3
Pin 9
Pin 4
Pin 5
Pin 6
Pin 7
Pin 8
Pin
Description
Pin
Description
1, 2, 4, 9, 11,12
GND
7
Vg
3
RF IN
10
RF OUT
5
Vg1
14
Vd
6, 8, 13, 15
N/C
16
Vd1
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
12
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
Mechanical Drawing
Units: Millimeters
TGA4030-SM
13
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Evaluation Board
0402 0.01 uF capacitors
Board material is 8 mil ROGERS RO4003
14
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Recommended Power Supply Connection Diagram
Amplifier & 2X Multiplier
Vd
Bias Procedure
Powering up:
Set Vg (starting from 0V) to –1.5V
Increase Vd (starting from 0V) to
desired voltage 5V
Make Vg more positive, ending up at
approx –0.75V. Id ~140mA.
Apply RF (max input level +20dBm).
Powering down:
Remove RF
Reduce Vd to 0V
Set Vg to -1.5V.
Amplifier
Vg
Vd
Set Vd = 5.0V
Vary (Vg + Vg1) to achieve Id =
140mA
2x Multiplier
Set Vd = 5.0V
Set Vg1 = -1.1V
Vary Vg to achieve Id =
120mA
Vg1
Vg
15
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Recommended Power Supply Connection Diagram
3X Multiplier
Vd1
Vd
Vg
3x Multiplier
Set Vd = 5.0V
Set Vd1 = 1.0V
Vary (Vg + Vg1) to achieve(Id + Id1) = 160mA
16
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A
TGA4030-SM
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile
SnPb
Pb Free
Ramp-up Rate
3 C/sec
3 C/sec
Activation Time and
Temperature
60 – 120 sec @ 140 – 160 C
60 – 180 sec @ 150 – 200 C
Time above Melting Point
60 – 150 sec
60 – 150 sec
Max Peak Temperature
240 C
260 C
Time within 5 C of Peak
Temperature
10 – 20 sec
10 – 20 sec
Ramp-down Rate
4 – 6 C/sec
4 – 6 C/sec
Ordering Information
Part
Package Style
TGA4030-SM
3X3 QFN
17
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
April 2012 © Rev A