TGC4402 17 – 27 GHz Upconverting Mixer Key Features • • • • • • • • Measured Performance RF Output Frequency Range: 17 - 27 GHz IF Input Frequency Range: 0.5 – 3 GHz Conversion Loss: 9 dB Input TOI: 18 dBm LO Input Power: 17 dBm Bias: Vg = -0.9 V Technology: 3MI 0.25 um pHEMT Chip Dimensions: 1.930 x 1.030 x 0.100 mm Primary Applications Conversion Loss vs Frequency: Vg= -0.9V, LO Input @ 17 dBm, IF = 2 GHz @ -5 dBm • • 15 Point-to-Point Radio K Band Sat-Com 14 Conversion Loss (dB) 13 Product Description 12 11 10 The TriQuint TGC4402 is an upconverting mixer MMIC design using TriQuint’s proven 0.25 um 3MI pHEMT process. The TGC4402 is designed to support a variety of millimeter wave applications including point-to-point digital radio and K band Sat-Com. 9 8 7 6 5 LSB USB 4 3 2 1 0 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) ITOI vs Frequency: Vg= -0.9V, LO Input @ 17 dBm, ITOI (dBm) IF = 2 GHz @ -5 dBm 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 The TGC4402 provides -9 dBm nominal conversion loss across 17 – 27 GHz . Typical LO input drive is 17 dBm across the band. The input IF Frequency is 0.5 – 3 GHz. The TGC4402 requires only 1 off-chip component. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. The TGC4402 has a protective surface passivation layer providing environmental robustness. USB LSB Lead-free and RoHS compliant 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A 1 TGC4402 Table I Absolute Maximum Ratings 1/ Symbol Vmxr Pin 1/ Parameter Value Gate Supply Voltage Range -5 - 0 V LO Input Continuous Wave Power 25 dBm Notes These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Table II Recommended Operating Conditions Symbol Vmxr Parameter Value Gate Voltage -0.9 V Table III RF Characterization Table Bias: Vg = -0.9 V, TA= 25 °C + 5°C SYMBOL NOMINAL UNITS RF Output Frequency 17 - 26 GHz FIF IF Input Frequency 0.5 - 3 GHz FLO LO Input Frequency 14 - 28 GHz PLO LO Input Power f = 14 - 28 GHz 17 dBm Conversion Loss f = 17 - 26 GHz 9 dB Input TOI f = 17 - 26 GHz 18 dBm LO – RF Output Isolation f = 17 - 26 GHz 35 dB FOUT ITOI PARAMETER TEST CONDITIONS 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A TGC4402 Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Maximum Power Dissipation Tbaseplate = 70 ºC Pd = 0.45 W Tchannel = 138 ºC Tm = 1.0E+6 Hrs Thermal Resistance, θjc LO input power is 17 dBm θjc = 76 (ºC/W) Tchannel = 121 ºC Tm = >1E+6 Hrs 30 seconds 320 ºC Max Mounting Temperature Storage Temperature 1/ Notes 1/ 2/ -65 to 150 ºC For a median life, Tm, of 1E+6 hours, power dissipation is limited to Pd(max) = (TBD ºC – Tbase ºC)/θjc. 2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A TGC4402 Measured Data conversion Loss vs Frequency, LO Input @ +17dBm IF = 2 GHz @ -5 dBm 15 14 Conversion Loss (dB) 13 12 11 10 9 8 7 6 5 LSB USB 4 3 2 1 0 17 18 19 20 21 22 23 24 25 26 27 25 26 27 Frequency (GHz) ITOI (dBm) ITOI vs Frequency, LO Input @ +17dBm IF = 2 GHz @ -5 dBm 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 USB LSB 17 18 19 20 21 22 23 24 Frequency (GHz) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A TGC4402 Measured Data Conversion Loss (dB) USB conversion vs Bias, LO Input @ +17dBm IF = 2 GHz @ -5 dBm 0 -2 -4 -6 -8 - 10 - 12 - 14 - 16 - 18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 - 1.5 - 1.4 - 1.3 - 1.2 - 1.1 -1 - 0 .9 - 0 .8 - 0 .7 - 0 .6 - 0 .5 - 0 .4 - 0 .3 - 0 .2 - 0 .1 0 Bias Voltage (V) Conversion Loss (dB) LSB conversion vs Bias, LO Input @ +17dBm IF = 2 GHz @ -5 dBm 0 -2 -4 -6 -8 - 10 - 12 - 14 - 16 - 18 -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 - 1.5 - 1.4 - 1.3 - 1.2 - 1.1 -1 - 0 .9 - 0 .8 - 0 .7 - 0 .6 - 0 .5 - 0 .4 - 0 .3 - 0 .2 - 0 .1 0 Bias Voltage (V) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A TGC4402 Measured Data USB conversion vs IF frequency, LO Input @ +17dBm LO frequency @ 20 GHz -5 Conversion Loss (dB) -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 IF Frequency (GHz) LSB conversion vs IF frequency, LO Input @ +17dBm LO frequency @ 20 GHz -5 Conversion Loss (dB) -6 -7 -8 -9 - 10 - 11 - 12 - 13 - 14 - 15 0 .4 0 .8 1.2 1.6 2 2 .4 2 .8 3 .2 3 .6 4 IF Frequency (GHz) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A TGC4402 Measured Data Isolation @ -0.9 V, LO Input @ +17dBm IF = 2 GHz @ -5 dBm 45 Isolation (dB) 40 35 30 25 17 18 19 20 21 22 23 24 25 26 27 LO Frequency (GHz) Isolation @ -0.9 V, LO Input @ +20dBm IF = 2 GHz @ -5 dBm 45 Isolation (dB) 40 35 30 25 17 18 19 20 21 22 23 24 25 26 27 LO Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A TGC4402 Mechanical Drawing 0.978 0.088 1.030 0.934 3 4 0.605 0.712 2 5 0.130 0.295 1 0.000 0.000 0.088 1.840 1.93 Unit in mm Thickness: 0.100 Chip edge to bond pad dimension are shown to center of bond pad Chip size tolerance: +/- 0.05 Ground is backside of die Bond Pad #1 LO In 0.085 x 0.100 Bond Pad #2 Vmxr 0.085 x 0.085 Bond Pad #3 IF In 0.200 x 0.100 Bond Pad #4 RF Out 0.100 x 0.200 Bond Pad #5 Vmxr 0.085 x 0.085 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A TGC4402 Recommended Assembly Diagram IF In RF Out LO In 100 pF Vmxr GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A 9 TGC4402 Assembly Notes Component placement and adhesive attachment assembly notes: 1. Vacuum pencils and/or vacuum collets are the preferred method of pick up. 2. Air bridges must be avoided during placement. 3. The force impact is critical during auto placement. 4. Organic attachment (i.e. epoxy) can be used in low-power applications. 5. Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes: 1. Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum. 2. An alloy station or conveyor furnace with reducing atmosphere should be used. 3. Do not use any kind of flux. 4. Coefficient of thermal expansion matching is critical for long-term reliability. 5. Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes: 1. Thermosonic ball bonding is the preferred interconnect technique. 2. Force, time, and ultrasonics are critical parameters. 3. Aluminum wire should not be used. 4. Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part Package Style TGC4402 GaAs MMIC Die GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2007 © Rev A