SHENZHENFREESCALE SUD50P08-25L

SUD50P08-25L
P-Channel
8 0V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (Ω)
ID (A)a
0.0252 at VGS = - 10 V
- 50
0.029 at VGS = - 4.5 V
- 47
VDS (V)
- 80
Qg (Typ)
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
55 nC
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
D
Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 80
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
- 42.5a
ID
- 12.5b, c
- 10.5b, c
TA = 70 °C
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
- 50a
IS
- 6.9b, c
IAS
- 45
EAS
101
mJ
136
95
PD
W
8.3b, c
5.8b, c
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 40
TC = 25 °C
Maximum Power Dissipation
V
- 50a
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
Unit
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t ≤ 10 sec
RthJA
15
18
Steady State
RthJC
0.85
1.1
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 °C/W.
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Unit
°C/W
SUD50P08-25L
P-Channel
8 0V (D-S) 175 °C MOSFET
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
VDS
VGS = 0 V, ID = - 250 µA
- 80
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
gfs
V
- 73
mV/°C
- 5.5
-1
-3
V
± 100
nA
VDS = - 80 V, VGS = 0 V
-1
VDS = - 80 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ 5 V, VGS = - 10 V
µA
A
VGS = - 10 V, ID = - 12.5 A
0.021
0.0252
VGS = - 4.5 V, ID = - 10.5 A
0.024
0.029
VDS = - 15 V, ID = - 12.5 A
52
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
4700
VDS = - 40 V, VGS = 0 V, f = 1 MHz
VDS = - 40 V, VGS = - 10 V, ID = - 12.5 A
VDS = - 40 V, VGS = - 4.5 V, ID = - 12.5 A
td(off)
f = 1 MHz
VDD = - 40 V, RL = 3.8 Ω
ID ≅ - 10.5 A, VGEN = - 10 V, Rg = 1 Ω
tf
td(on)
tr
td(off)
105
160
55
85
16
nC
26
td(on)
tr
pF
320
235
VDD = - 40 V, RL = 3.8 Ω
ID ≅ - 10.5 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
Ω
4
45
70
220
330
95
145
110
165
15
25
25
40
105
160
100
150
ns
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 50
- 40
IS = - 10.5 A
IF = - 10.5 A, di/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
55
85
ns
110
165
nC
37
18
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD50P08-25L
P-Channel
8 0V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C unless noted
20
40
VGS = 10 thru 4 V
35
I D - Drain Current (A)
16
I D - Drain Current (A)
30
25
20
15
12
8
TA = 125 °C
10
4
3V
25 °C
5
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.0
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.026
8000
7000
0.025
VGS = 6 V
6000
C - Capacitance (pF)
rDS(on) - On-Resistance (Ω)
1.5
0.024
0.023
0.022
VGS = 10 V
Ciss
5000
4000
3000
2000
Coss
0.021
Crss
1000
0.020
0
0
5
10
15
20
25
30
35
40
0
20
30
40
50
60
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
70
80
150
175
2.3
10
2.1
ID = 12.5 A
8
ID = 12.5 A
1.9
rDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
10
VDS = 64 V
6
VDS = 40 V
4
VGS = 10 V
1.7
1.5
1.3
VGS = 6 V
1.1
0.9
2
0.7
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
3/7
100
120
0.5
- 50
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SUD50P08-25L
P-Channel
8 0V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C unless noted
0.05
rDS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
40
TJ = 150 °C
10
TJ = 25 °C
0.04
TA = 125 °C
0.03
TA = 25 °C
0.02
0.01
1
0.00
0.2
0.4
0.6
0.8
1.0
2
1.2
3
4
VSD - Source-to-Drain Voltage (V)
2.4
7
8
9
30
ID = 250 µA
2.0
Power (W)
25
1.8
1.6
1.4
20
15
10
1.2
5
- 25
0
25
50
75
100
125
150
0
0.01
175
0.1
1
TJ - Temperature (°C)
10
100
Single Pulse Power, Junction-to-Ambient
100
10
I D - Drain Current (A)
1000
Time (sec)
Threshold Voltage
100 µs
*Limited by
r DS(on)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
dc
TA = 25 °C
Single Pulse
0.01
0.001
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
*VGS > minimum V GS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4/7
10
35
2.2
VGS(th) (V)
6
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.0
- 50
5
VGS - Gate-to-Source Voltage (V)
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SUD50P08-25L
P-Channel
8 0V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C unless noted
140
60
120
50
Package Limited
Power
ID - Drain Current (A)
100
40
30
20
80
60
40
10
20
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
175
IC - Peak Avalanche Current (A)
100
10
TA =
L · ID
BV - V DD
1
0.000001
0.00001
0.0001
0.001
0.01
TA - Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
5/7
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SUD50P08-25L
P-Channel
8 0V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
25 °C unless noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-2
10-1
1
10
Square Wave Pulse Duration (sec)
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (sec)
10-1
Normalized Thermal Transient Impedance, Junction-to-Case
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1
SUD50P08-25L
P-Channel
8 0V (D-S) 175 °C MOSFET
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