DINTEK DTL15P03

D5-1
www.daysemi.jp
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)
0.018 at VGS = - 10 V
- 16d
0.0305 at VGS = - 4.5 V
- 16d
•
•
•
•
Qg (Typ.)
22 nC
Halogen-free
TrenchFET® Power MOSFET
100% Rg Tested
100% UIS Tested
RoHS
COMPLIANT
APPLICATIONS
TO-251
S
• Notebook Battery Charging
• Notebook Adapter Switch
G
D
G D S
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 30
± 25
- 16d
- 10.6a, b
- 8.6a, b
- 50
- 16d
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
- 3.0a, b
- 20
20
52
33
3.7a, b
2.4a, b
- 55 to 150
260
TJ, Tstg
Operating Junction and Storage Temperature Range
V
16d
IDM
Pulsed Drain Current
Unit
Soldering Recommendations (Peak Temperature)
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 81 °C/W.
d. Package limited.
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D5-1
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
V
- 31
mV/°C
5.5
VGS(th)
VDS = VGS, ID = - 250 µA
- 3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
VDS ≥ - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 10 A
tr
- 30
0.018
VGS = - 4.5 V, ID = - 7 A
0.0255
0.0305
VDS = - 10 V, ID = - 10 A
23
1960
VDS = - 15 V, VGS = 0 V, f = 1 MHz
380
pF
325
VDS = - 15 V, VGS = - 10 V, ID = - 10 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A
43
65
22
33
6
nC
11
f = 1 MHz
VDD = - 15 V, RL = 3 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
0.3
1.3
2.5
11
22
13
25
32
50
9
18
td(on)
44
70
100
160
28
50
15
30
tr
Ω
S
tf
td(off)
µA
A
0.015
td(on)
td(off)
- 1.0
VDD = - 15 V, RL = 3 Ω
ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω
tf
Ω
ns
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 16
- 50
IS = - 2 A, VGS = 0 V
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.75
- 1.2
V
28
45
ns
20
40
nC
13
15
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
D5-1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
60
VGS = 10 thru 5 V
4
I D - Drain Current (A)
I D - Drain Current (A)
50
40
VGS = 4 V
30
20
3
2
VGS = 125 °C
1
10
VGS = 25 °C
VGS = 3 V
VGS = - 55 °C
0
0
0
1
2
3
4
0
5
Output Characteristics
4
5
Transfer Characteristics
0.05
3000
0.04
2400
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
3
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
0.03
2
1
VGS = 4.5 V
0.02
VGS = 10 V
0.01
Ciss
1800
1200
Coss
600
Crss
0
0
0
10
20
30
40
50
60
6
0
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.6
ID = 10 A
ID = 10 A
8
VDS = 10 V
6
VDS = 20 V
VDS = 15 V
4
2
(Normalized)
1.4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
VGS = - 10 V
1.2
VGS = - 4.5 V
1.0
0.8
0
0
10
20
30
Qg - Total Gate Charge (nC)
Gate Charge
40
50
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
ID = 10 A
1
TJ = 25 °C
TJ = 150 °C
0.08
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
0.1
0.01
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.6
40
ID = 5 mA
Power (W)
0.4
ID = 250 µA
0.2
30
20
0.0
10
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
TJ - Temperature (°C)
10
100
1000
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on)*
I D - Drain Current (A)
1
Time (s)
Threshold Voltage
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area
4
4
Source-Drain Diode Forward Voltage
0.8
VGS(th) Variance (V)
2
100
D5-1
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
I D - Drain Current (A)
36
27
Package Limited
18
9
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
65
2.0
52
1.6
39
1.2
Power (W)
Power (W)
Current Derating*
26
13
0.8
0.4
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
6
1
Package Information
TOĆ251AA (DPAK)
E
A
L2
b2
Dim
A
A1
b
b1
b2
c
c1
D
E
e
L
L1
L2
L3
D
L3
L1
b1
L
b
MILLIMETERS
c1
e
c
A1
INCHES
Min
Max
Min
Max
2.21
2.38
0.087
0.094
0.89
1.14
0.035
0.045
0.71
0.89
0.028
0.035
0.76
1.14
0.030
0.045
5.23
5.43
0.206
0.214
0.46
0.58
0.018
0.023
0.46
0.58
0.018
0.023
5.97
6.22
0.235
0.245
6.48
6.73
0.255
0.265
2.28 BSC
0.090 BSC
8.89
9.53
0.350
0.375
1.91
2.28
0.075
0.090
0.89
1.27
0.035
0.050
1.15
1.52
0.045
0.060
ECN: S-03946—Rev. E, 09-Jul-01
DWG: 5346
Note: Dimension L3 is for reference only.
www.GD\VHPLMS
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
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