D5-1 www.daysemi.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.018 at VGS = - 10 V - 16d 0.0305 at VGS = - 4.5 V - 16d • • • • Qg (Typ.) 22 nC Halogen-free TrenchFET® Power MOSFET 100% Rg Tested 100% UIS Tested RoHS COMPLIANT APPLICATIONS TO-251 S • Notebook Battery Charging • Notebook Adapter Switch G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 25 - 16d - 10.6a, b - 8.6a, b - 50 - 16d ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 3.0a, b - 20 20 52 33 3.7a, b 2.4a, b - 55 to 150 260 TJ, Tstg Operating Junction and Storage Temperature Range V 16d IDM Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature) A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case t ≤ 10 s Steady State Symbol RthJA RthJC Typical 26 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 81 °C/W. d. Package limited. 1 D5-1 www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage V - 31 mV/°C 5.5 VGS(th) VDS = VGS, ID = - 250 µA - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 10 A tr - 30 0.018 VGS = - 4.5 V, ID = - 7 A 0.0255 0.0305 VDS = - 10 V, ID = - 10 A 23 1960 VDS = - 15 V, VGS = 0 V, f = 1 MHz 380 pF 325 VDS = - 15 V, VGS = - 10 V, ID = - 10 A VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 43 65 22 33 6 nC 11 f = 1 MHz VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 0.3 1.3 2.5 11 22 13 25 32 50 9 18 td(on) 44 70 100 160 28 50 15 30 tr Ω S tf td(off) µA A 0.015 td(on) td(off) - 1.0 VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω tf Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 16 - 50 IS = - 2 A, VGS = 0 V IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.75 - 1.2 V 28 45 ns 20 40 nC 13 15 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D5-1 www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 60 VGS = 10 thru 5 V 4 I D - Drain Current (A) I D - Drain Current (A) 50 40 VGS = 4 V 30 20 3 2 VGS = 125 °C 1 10 VGS = 25 °C VGS = 3 V VGS = - 55 °C 0 0 0 1 2 3 4 0 5 Output Characteristics 4 5 Transfer Characteristics 0.05 3000 0.04 2400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.03 2 1 VGS = 4.5 V 0.02 VGS = 10 V 0.01 Ciss 1800 1200 Coss 600 Crss 0 0 0 10 20 30 40 50 60 6 0 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 ID = 10 A ID = 10 A 8 VDS = 10 V 6 VDS = 20 V VDS = 15 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 VGS = - 10 V 1.2 VGS = - 4.5 V 1.0 0.8 0 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge 40 50 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 D5-1 www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 ID = 10 A 1 TJ = 25 °C TJ = 150 °C 0.08 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 0.1 0.01 0.06 0.04 TJ = 125 °C 0.02 TJ = 25 °C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 50 0.6 40 ID = 5 mA Power (W) 0.4 ID = 250 µA 0.2 30 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 TJ - Temperature (°C) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* I D - Drain Current (A) 1 Time (s) Threshold Voltage 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 4 4 Source-Drain Diode Forward Voltage 0.8 VGS(th) Variance (V) 2 100 D5-1 www.daysemi.jp MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 45 I D - Drain Current (A) 36 27 Package Limited 18 9 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power (W) Power (W) Current Derating* 26 13 0.8 0.4 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 D5-1 www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 Package Information TOĆ251AA (DPAK) E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e c A1 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 Note: Dimension L3 is for reference only. www.GD\VHPLMS 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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