ONSEMI SURHD8560T4G

MURHD560T4G,
SURHD8560T4G,
MURHD560W1T4G,
SURHD8560W1T4G
Power Rectifier
http://onsemi.com
Features and Benefits







ULTRAFAST RECTIFIER
5.0 AMPERES
600 VOLTS
Ultrafast 30 Nanosecond Recovery Times
175C Operating Junction Temperature
High Temperature Glass Passivated Junction
High Voltage Capability to 600 Volts
AEC−Q101 Qualified and PPAP Capable
SURHD8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb−Free Devices*
DPAK
CASE 369C
STYLES 3, 8
Applications
 Power Supplies
 Inverters
 Free Wheeling Diodes
1
4
3


4
3
STYLE 3
Mechanical Characteristics




1
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 0.4 g (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
ESD Ratings:
 Machine Model = C (> 400 V)
 Human Body Model = 3B (> 8000 V)
STYLE 8
MARKING DIAGRAMS
AYWW
AYWW
UH560G
560W1G
STYLE 3
STYLE 8
UH560
560W1
A
Y
WW
G
= MURHD560T4
= MURHD560W1T4
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MURHD560T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SURHD8560T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
MURHD560W1T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
SURHD8560W1T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MURHD560/D
MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
600
V
Average Rectified Forward Current
(Rated VR, TC = 159C)
IF(AV)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Operating Junction and Storage Temperature Range
TJ, Tstg
5.0
50
−65 to +175
A
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Maximum Thermal Resistance, Junction to Case
Rating
RqJC
2.5
C/W
Maximum Thermal Resistance, Junction to Ambient (Note 1)
RqJA
49.5
C/W
Value
Unit
1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700
mm2
Cu area.
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 5.0 Amps, TC = 25C)
(IF = 5.0 Amps, TC = 125C)
VF
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 25C)
(Rated dc Voltage, TC = 125C)
IR
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25C)
trr
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.
http://onsemi.com
2
2.7
1.65
10
70
30
V
mA
ns
MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G
100
IF, FORWARD CURRENT (AMPS)
IF, FORWARD CURRENT (AMPS)
100
150C
10
125C
100C
1
25C
0.1
0.01
0
1.0
0.5
2.5
2.0
1.5
125C
25C
0.1
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
6.0
IR, MAXIMUM REVERSE CURRENT (AMPS)
1.0E−3
IR, REVERSE CURRENT (AMPS)
150C
125C
1.0E−5
150C
1.0E−4
100C
1.0E−6
125C
100C
1.0E−5
1.0E−7
1.0E−6
1.0E−8
100
0
200
500
400
300
25C
1.0E−7
25C
600
1.0E−8
0
100
200
400
300
500
600
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
100
PFO, AVERAGE POWER DISSIPATION
(WATTS)
20
90
C, CAPACITANCE (pF)
5.0
4.0
3.0
Figure 2. Maximum Forward Voltage
1.0E−4
80
70
60
50
40
30
20
10
0
2.0
1.0
VF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.0E−9
100C
1
0.01
3.0
150C
10
0
25
50
75
100
125
150
175
200
TJ = 175C
15
SQUARE
WAVE
10
dc
5
0
0
1
2
3
4
5
6
7
VR, REVERSE VOLTAGE (VOLTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Typical Capacitance
Figure 6. Forward Power Dissipation
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3
8
IF, AVERAGE FORWARD CURRENT (AMPS)
MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G
9
RqJC = 2.5C/W
TJ = 175C
dc
8
7
6
SQUARE WAVE
5
4
3
2
1
0
100
110
120
130
140
150
160
170
180
TC, CASE TEMPERATURE (C)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Current Derating
10
0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
t1
Single Pulse
t2
DUTY CYCLE, D = t1/t2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
100
10
1000
t, TIME (s)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response, Junction to Case
100
10
1
0.5
0.2
0.1
0.05
0.01
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 9. Thermal Response, Junction to Ambient
http://onsemi.com
4
10
100
1000
MURHD560T4G, SURHD8560T4G, MURHD560W1T4G, SURHD8560W1T4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
6.17
0.243
SCALE 3:1
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
3.00
0.118
1.60
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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5
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
MURHD560/D