IRF IRF7705

PD - 94001A
IRF7705
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.2mm)
Available in Tape & Reel
VDSS
Ω)
RDS(on) max (mΩ)
ID
-30V
18 @VGS = -10V
30 @VGS = -4.5V
-8.0A
-6.0A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
1
8
D
2
7
3
G
4
1=
2=
3=
4=
D
S
S
G
6
S
5
8=
7=
6=
5=
D
S
S
D
TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-8.0
-6.0
-30
1.5
0.96
0.012
± 20
-55 to + 150
V
W/°C
V
°C
Max.
Units
83
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
06/05/01
IRF7705
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-30 ––– –––
V
VGS = 0V, ID = -250µA
––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 18
VGS = -10V, ID = -8.0A ‚
mΩ
––– ––– 30
VGS = -4.5V, ID = -6.0A ‚
-1.0 ––– -2.5
V
VDS = VGS, I D = -250µA
13 ––– –––
S
VDS = -10V, ID = -8.0A
––– ––– -15
VDS = -24V, VGS = 0V
µA
––– ––– -25
VDS = -24V, VGS = 0V, TJ = 70°C
––– ––– -100
VGS = -20V
nA
––– ––– 100
VGS = 20V
––– 58
88
ID = -8.0A
––– 10 –––
nC
VDS = -15V
––– 9.0 –––
VGS = -10V‚
––– 18
27
VDD = -15V, VGS = -10V‚
––– 35
53
ID = -1.0A
ns
––– 270 405
RD = 15Ω
––– 128 190
RG = 6.0Ω ‚
––– 2774 –––
VGS = 0V
––– 418 –––
pF
VDS = -25V
––– 270 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-30
–––
–––
–––
–––
36
34
-1.2
54
50
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V ‚
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs ‚
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square copper board, t<10 sec
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7705
100
100
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
BOTTOM -2.5V
10
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-2.5V
0.1
20µs PULSE WIDTH
Tj = 25°C
0.01
10
-2.5V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 150 ° C
TJ = 25 ° C
V DS = -15V
20µs PULSE WIDTH
0.1
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
1
10
100
Fig 2. Typical Output Characteristics
100
10
1
-V DS , Drain-to-Source Voltage (V)
ID = -8.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7705
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2400
1600
Coss
800
C
rss
1
10
12
8
4
0
100
0
-VDS , Drain-to-Source Voltage (V)
10
20
30
40
50
60
70
80
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-II D , Drain Current (A)
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
ID = 8.0A
VDS = -24V
VDS = -15V
0
-ISD , Reverse Drain Current (A)
C, Capacitance (pF)
3200
16
-VGS , Gate-to-Source Voltage (V)
4000
1.4
100us
10
1ms
TC = 25 ° C
TJ = 150 °C
Single Pulse
1
0.1
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7705
8.0
RD
VDS
VGS
-I D , Drain Current (A)
6.0
D.U.T.
RG
+
VDD
VGS
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
TC , Case Temperature
125
150
10%
( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
P DM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R DS ( on ) , Drain-to-Source On Resistance ( Ω )
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF7705
0.08
0.07
0.06
0.05
0.04
ID = -8.0A
0.03
0.02
0.01
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.06
0.04
VGS = -4.5V
VGS = -10V
0.02
0.00
0
10
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
30
40
50
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
D.U.T.
QGS
+VDS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7705
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
PART NUMBER
T ABLE 1
XXYW
7702
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.)
DAT E CODE EXAMPLES :
9503 = 5C
9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
T ABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
WEEK
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
Ø 13"
16 mm
16mm
8 mm
FEED DIRECT ION
NOT ES:
1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
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7
IRF7705
TSSOP-8 Package Outline
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
8
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