PD - 93894A
IRF7700
HEXFET® Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.1mm)
Available in Tape & Reel
VDSS
RDS(on) max
ID
-20V
0.015@VGS = -4.5V
-8.6A
0.024@VGS = -2.5V
-7.3A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that International Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
1
8
D
2
7
3
G
4
1=
2=
3=
4=
D
S
S
G
6
S
5
8=
7=
6=
5=
D
S
S
D
TSSOP-8
The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
±8.6
±6.8
±68
1.5
0.96
0.01
± 12
-55 to + 150
V
W/°C
V
°C
Max.
Units
83
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
6/19/00
IRF7700
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.45
-20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.011
–––
–––
–––
–––
–––
–––
–––
–––
59
10
19
19
40
120
130
4300
880
580
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.015
VGS = -4.5V, ID = -8.6A
Ω
0.024
VGS = -2.5V, ID = -7.3A
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -8.6A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, T J = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
89
ID = -8.6A
15
nC
VDS = -16V
29
VGS = -5.0V
–––
VDD = -10V
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -4.5V
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = TBDkHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-68
–––
–––
–––
–––
130
180
-1.2
200
270
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7700
100
100
VGS
-15V
-10V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
BOTTOM -2.0V
-2.0V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
-2.0V
10
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (Α )
T J = 25°C
T J = 150°C
VDS = -15V
20µs PULSE WIDTH
2.8
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
2.4
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
2.0
VGS
-15V
-10V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
BOTTOM -2.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
3.2
ID = 4.1A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7700
VGS =
Ciss =
Crss =
Coss =
Ciss
1200
800
400
Coss
Crss
ID = -4.1A
VDS =-16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
8
12
16
20
24
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
-II D , Drain Current (A)
100
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.0
0.5
1.0
1.5
Fig 7. Typical Source-Drain Diode
Forward Voltage
10us
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
-VSD ,Source-to-Drain Voltage (V)
4
4
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
-ISD , Reverse Drain Current (A)
C, Capacitance (pF)
1600
10
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
2000
2.0
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7700
5.0
RD
VDS
VGS
-ID , Drain Current (A)
4.0
D.U.T.
RG
+
VDD
3.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
0.0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R DS (on) , Drain-to-Source On Resistance ( Ω)
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF7700
0.026
0.022
0.018
ID = -8.6A
0.014
0.010
2.0
4.0
6.0
8.0
10.0
0.06
0.04
VGS = -2.5V
0.02
VGS = -4.5V
0.00
0
20
-V GS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
40
60
80
-I D , Drain Current (A)
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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0.90
60
0.80
50
0.70
40
ID = -250µA
Power (W)
-V GS(th) , Variace (V)
IRF7700
0.60
30
0.50
20
0.40
10
0.30
0
-50
0
50
100
150
T J , Temperature (°C)
Fig 14. Threshold Voltage Vs. Temperature
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0.01
0.10
1.00
10.00
100.00
Time (sec)
Fig 15. Typical Power Vs. Time
7
IRF7700
TSSOP-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
PART NUMBER
TABLE 1
XXYW
7702
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
DAT E CODE EXAMPLES:
9503 = 5C
9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
TABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ET C.)
WORK
WEEK
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
Ø 13"
16 mm
16mm
8 mm
FEED DIRECT ION
NOT ES:
1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
8
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IRF7700
TSSOP-8 Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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