IRF IRF7757

PD - 94174
IRF7757
HEXFET® Power MOSFET
l
l
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Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Common Drain Configuration
VDSS
20V
Ω)
RDS(on) max (mΩ)
ID
35@VGS = 4.5V
40@VGS = 2.5V
4.8A
3.8A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
8
2
7
3
6
4
5
1=
2=
3=
4=
S1
G1
S2
G2
8=
7=
6=
5=
D
D
D
D
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
4.8
3.9
19
1.2
0.76
9.5
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
105
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
05/03/01
IRF7757
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.60
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.013
–––
–––
–––
–––
–––
–––
–––
–––
15
2.5
4.8
9.5
9.2
36
14
1340
180
132
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
35
VGS = 4.5V, ID = 4.8A ‚
mΩ
40
VGS = 2.5V, ID = 3.8A ‚
1.2
V
VDS = V GS, ID = 250µA
–––
S
VDS = 10V, ID = 4.8A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
100
VGS = 12V
nA
-100
VGS = -12V
23
ID = 4.8A
–––
nC
VDS = 16V
–––
VGS = 4.5V
–––
VDD = 10V ‚
–––
ID = 1.0A
ns
–––
RG = 6.2Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
1.2
–––
–––
19
–––
–––
–––
–––
20
10
1.2
30
15
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 1.2A, VGS = 0V
TJ = 25°C, I F = 1.2A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on 1 in square Cu board
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7757
1000
100
VGS
7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
VGS
7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
100
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
1.5V
1
10
1.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID , Drain-to-Source Current (Α )
100.00
T J = 150°C
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
1.00
1.5
2.0
2.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
10.00
1
VDS, Drain-to-Source Voltage (V)
3.0
ID = 4.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7757
10000
5
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
1000
Coss
ID = 4.8A
VDS = 16V
VDS = 10V
4
3
2
1
Crss
0
100
0
1
10
100
4
8
12
16
20
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.00
10.00
T J = 150°C
1.00
T J = 25°C
10
100µsec
1msec
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.10
0.1
0.1
0.5
0.9
1.2
1.6
VSD , Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.0
0
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7757
5.0
VDS
VGS
I D , Drain Current (A)
4.0
RD
D.U.T.
RG
+
- VDD
3.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1000
100
D = 0.50
0.20
0.10
10
0.05
P DM
0.02
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
0.05
R DS (on) , Drain-to-Source On Resistance ( Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω )
IRF7757
0.04
ID = 4.8A
0.03
0.02
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.050
VGS = 2.5V
0.040
VGS = 4.5V
0.030
0.020
0
5
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate
Voltage
10
15
20
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
QG
50KΩ
12V
.2µF
.3µF
VGS
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
Fig 14b. Gate Charge Test Circuit
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IRF7757
1.3
120
100
1.1
90
80
0.9
Power (W)
VGS(th) Gate threshold Voltage (V)
110
ID = 250µA
0.7
70
60
50
40
30
0.5
20
10
0.3
0
-75
-50
-25
0
25
50
75
100
125
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
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150
1.00
10.00
100.00
1000.00
Time (sec)
Fig 16. Typical Power Vs. Time
7
IRF7757
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
PART NUMBER
T ABLE 1
XXYW
7702
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.)
DAT E CODE EXAMPLES :
9503 = 5C
9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
T ABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
WEEK
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
Ø 13"
16 mm
16mm
8 mm
FEED DIRECT ION
NOT ES:
1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
8
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IRF7757
TSSOP-8 Package Outline
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/01
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